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Details, datasheet, quote on part number:MCH3211
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Datasheet text preview:
Ordering number : ENN7016
MCH3211
NPN Epitaxial Planar Silicon Transistor
MCH3211
DC / DC Converter Applications
Applications
·
Package Dimensions
unit : mm 2194A
[MCH3211]
0.25
Relay drivers, lamp drivers, motor drivers, strobes.
Features
· · · · ·
·
Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultraminiature package facilitates miniaturization in end products. (mounting height : 0.85mm). High allowable power dissipation.
0.3
0.15
3
2.1 1.6
0.25
0.65 2.0
0.07
2
1
3
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Mounted on a ceramic board(600mm2!0.8mm) Conditions
0.85
1 : Base 2 : Emitter 3 : Collector
1 2
SANYO : MCPH3
Ratings 15 10 5 3 5 600 0.8 150 --55 to +150
Unit V V V A A mA W °C °C
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Symbol ICBO I EBO hFE fT Cob VCE(sat)1 VCE(sat)2 Conditions VCB=12V, IE=0 VEB=4V, IC=0 VCE=2V, IC=500mA VCE=2V, IC=500mA VCB=10V, f=1MHz IC=1.5A, IB=30mA IC=3A, IB=60mA Ratings min typ max 0.1 0.1 600 380 23 100 180 150 270 MHz pF mV mV Unit µA µA
Marking : CG
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle a p p l i c a t i o n s that require extremely high levels of reliability, such as life-support systems, aircraft's c o n t r o l systems, or other applications whose failure can be reasonably expected to result in serious p h y s i c a l and/or material damage. Consult with your SANYO representative nearest you before using a n y SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other p a r a m e t e r s ) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92001 TS IM TA-3359 No.7016-1/4
MCH3211
Continued from preceding page.
Parameter Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions IC=1.5A, IB=30mA IC=10µA, IE=0 IC=1mA, RBE= IE=10µA, IC=0 See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min 15 10 5 30 210 11 typ 0.85 max 1.2 Unit V V V V ns ns ns
Switching Time Test Circuit
PW=20µs D.C.1% INPUT 50 + 220µF VBE= --5V 20IB1= --20IB2=IC=1.5A + 470µF VCC=5V IB1 OUTPUT IB2 VR 1k
RL
5
IC -- VCE
40m
25
20m
15m
20mA
mA
5
IC -- VCE
15 m A
10mA
8mA
A
A
A
10mA
4
4
Collector Current, IC -- A
Collector Current, IC -- A
25mA
A
60m
3
5mA 4mA
6mA
4mA
2mA
3
3mA
2
2mA 1mA
2
1mA
1
1
0 0 0.2 0.4 0.6 0.8
IB=0
1.0 IT01588
0 0 1 2 3 4
IB=0
5 IT01589
Collector-to-Emitter Voltage, VCE -- V
6.0 5.5 5.0
IC -- VBE
Collector-to-Emitter Voltage, VCE -- V
10000 7 5 3 2
hFE -- IC
VCE=2V
VCE=2V
Ta=75°C
Collector Current, IC -- A
DC Current Gain, hFE
4.5 4.0 3.5 3.0
1000 7 5 3 2 100 7 5 3 2
--25°C
25°C
2.0 1.5 1.0 0.5 0 0 0.2 0.4 0.6
Ta=7 5°C 25°C --25°C
2.5
0.8
1.0 IT01590
10 0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- A
5 7 10 IT01591
No.7016-2/4
MCH3211
1000
VCE(sat) -- IC
IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV
Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV
7 5 3 2 100 7 5 3 2 10 7 5 3 2 1.0 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2
1000 7 5 3 2
VCE(sat) -- IC
IC / IB=50
25
= Ta 75 °C
°C
25
100 7 5 3 2 10 7 5 3 2 1.0 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3
°C
Ta
=7
5°C
5 --2
°C
°C --25
3
Collector Current, IC -- A
10 7
5 7 10 IT01592
VBE(sat) -- IC
Collector Current, IC -- A
100
5 7 10 IT01593
Cob -- VCB
IC / IB=50 Output Capacitance, Cob -- pF
7
f=1MHz
Base-to-Emitter Saturation Voltage, VBE(sat) -- V
5 3 2
5
1.0 7 5 3 2
Ta= --25°C
75°C
25°C
3
2
0.1 0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Collector Current, IC -- A
1000 7
5 7 10 IT01594
10 1.0
2
3
5
7
10
2
3
5 IT01595
f T -- IC
Collector-to-Base Voltage, VCB -- V
10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2
ASO
VCE=2V
ICP=5A
50
Gain-Bandwidth Product, f T -- MHz
5 3 2
IC=3A
1m s
s 0µ
Collector Current, IC -- A
10 m
0m
DC
10
Op era
s
s
100 7 5 3 2
tio
n
10 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5
0.01 0.1
Ta=25°C Single pulse Mounted on a ceramic board (600mm2!0.8mm)
2 3 5 7 1.0 2 3 5 7
Collector Current, IC -- A
1.0
IT01596
PC -- Ta
Collector-to-Emitter Voltage, VCE -- V
2 10 IT03462
Collector Dissipation, PC -- W
0.8
M
0.6
ou
nte
do
na
ce
ram
ic
bo
0.4
ard
(60
0m
m2 !0
0.2
.8m
m)
0 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT03463
No.7016-3/4
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