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Details, datasheet, quote on part number:MCH3302
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Datasheet text preview:
Ordering number:ENN6369
P-Channel Silicon MOSFET
MCH3302
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance. · Ultrahigh-speed swithcing. · 4V drive.
Package Dimensions
unit:mm 2167
[MCH3302]
0.25
0.3 3
0.15
1.6
1 0.65 2.0
2
0.25 0.85
2.1
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10µs, duty cycle1% Mounted on a ceramic board (900mm2×0.8mm) Conditions
1 : Gate 2 : Source 3 : Drain SANYO : MCPH3
0.15
Ratings 30 ±20 1 4 1 150 55 to +150
Unit V V A A W °C °C
Electrical Characteristics at Ta = 25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=500mA ID=500mA, VGS=10V ID=300mA, VGS=4V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz 1.0 670 950 350 680 90 50 20 460 950 Conditions Ratings min 30 10 ±10 2.5 typ max Unit V µA µA V mS m m pF pF pF
Marking : JB
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle a p p l i c a t i o n s that require extremely high levels of reliability, s u c h as life-support systems, a i r c r a f t ' s c o n t r o l systems, o r other applications whose failure can be reasonably expected to result in serious p h y s i c a l and/or material damage. Consult with your SANYO representative nearest you before using a n y SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other p a r a m e t e r s ) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
31000TS (KOTO) TA-2454 No.6369-1/4
MCH3302
Continued from preceding page.
Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=10V, VGS=10V, ID=1A VDS=10V, VGS=10V, ID=1A VDS=10V, VGS=10V, ID=1A IS=1A, VGS=0 Ratings min typ 6 9.5 20 16 4 1 1 0.9 1.5 max Unit ns ns ns ns nC nC nC V
Switching Time Test Circuit
VDD=--15V 0V --10V VIN VIN ID=--500mA RL=30
PW=10µs D.C.1%
D
VOUT
G
P.G
50
S
MCH3302
--1.6 --1.4 --1.2
ID -- VDS
0V
--6
--2.0
ID -- VGS
VDS=--10V
--8 .
Drain Current, ID A
.0V
V --4.0
Drain Current, ID A
--1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 0 --1 --2 --3
--1.0 --0.8 --0.6 --0.4 --0.2 0
--1 0
--3.5V
--3.0V VGS=--2.5V
0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
--4
25°
--5 IT01436 140 160 IT01438
Drain-to-Source Voltage, VDS V
1000 900
IT01435
Gate-to-Source Voltage, VGS V
1200 1100
RDS(on) -- VGS
Ta=25°C
RDS(on) -- Ta
Static Drain-to-Source On-State Resistance, RDS (on) m
800 700 600 500 400 300 200 100 0 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20
Static Drain-to-Source On-State Resistance, RDS (on) m
1000 900 800 700 600 500 400 300 200 100 0 --60 --40 --20 0 20 40 60 80 100 120
--3 I D=
00m
--4 S= A, VG
V
ID=--300mA
--500mA
A 500m I D=--
=--10V , V GS
Gate-to-Source Voltage, VGS V
IT01437
Ambient Temperature, Ta °C
No.6369-2/4
C
--1.6
Ta= --25 °C 75°C
.0
V
--1.8
MCH3302
Forward Transfer Admittance, | yfs | S
10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10
yfs -- ID
VDS=--10V
--10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.01 0 --0.2 --0.4
IF -- VSD
VGS=0
-Ta=
25°
C
C 25°
C 75°
Forward Current, IF A
0.01 --0.01
Ta=75 °C 25°C --25°C
--0.6 --0.8
--1.0
--1.2
--1.4
Drain Current, ID A
100 7
IT01439 1000
Diode Forward Voltage, VSD V
IT01440
SW Time -- ID
VDD=--15V VGS=--10V
Ciss, Coss, Crss -- VDS
f=1MHz
7 5
Switching Time, SW Time ns
5 3 2
Ciss, Coss, Crss pF
tf
td(off)
3 2
10 7 5 3 2
100 7 5 3 2
Ciss Coss
tr td(on)
Crss
0 --5 --10 --15 --20 --25 --30 IT01442
1.0 3 5 7 --0.1 2 3 5 7 --1.0 2 3
10
Drain Current, ID A
--10 --9
IT01441 --10 7 5 3 2
Drain-to-Source Voltage, VDS V
VGS -- Qg
VDS=--10V ID=--1A
ASO
IDP=--4A
100µs
1m s
Gate-to-Source Voltage, VGS V
--8
Drain Current, ID A
--7 --6 --5 --4 --3 --2 --1 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
--1.0 7 5 3 2
ID=--1A
DC
10
m
10
s
--0.1 7 5 3 2
s op era tio Operation in this n area is limited by RDS(on).
0m
Ta=25°C Single pulse
Total Gate Charge, Qg nC
1.2
--0.01 Mounted on a ceramic 23 5 7 --1.0 --0.1
board (900mm2×0.8mm)
2 3 5 7 --10 2 3 5 7 --100 IT01444
IT01443
Drain-to-Source Voltage, VDS V
PD -- Ta
Allowable Power Dissipation, PD W
1.0
M
ou
nt
0.8
ed
on
ac
er
0.6
am
ic
bo
ar
d
(9
0.4
00
m
m2 ×0
.8
0.2
m
m
)
140 160
0 0 20 40 60 80 100 120
Ambient Temperature, Ta °C
IT01445
No.6369-3/4
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