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Part: MCH3306
Category:
Description: Ultrahigh-speed Switching , Package : MCPH3
Company: Sanyo Semiconductor Corporation
Datasheet: Download MCH3306 datasheet File size : 43 kB
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Datasheet text preview:
Ordering number : ENN6900
MCH3306
P-Channel Silicon MOSFET
MCH3306
Ultrahigh-Speed Switching Applications
Features
· · ·
Package Dimensions
unit : mm 2167
[MCH3306]
0.25
0.3 0.15
Low ON-resistance. Ultrahigh-speed switching. 1.8V drive.
3
1.6 2.1
1
0.65 2.0
2
0.25
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10µs, duty cycle1% Conditions
0.15
Specifications
1 : Gate 2 : Source 3 : Drain SANYO : MCPH3
Ratings - 20 ± 10 --2 --8 1 150 --55 to +150 Unit V V A A W °C °C
Mounted on a ceramic board (900mm2!0.8mm)
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS I GSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Conditions ID=--1mA, VGS=0 VDS=- 20V, VGS=0 VGS=± 8V, VDS=0 VDS=- 10V, ID=--1mA VDS=- 10V, ID=- 1A ID=--1A, VGS=- 4V ID=--0.5A, VGS=- 2.5V ID=--0.1A, VGS=- 1.8V Ratings min --20 --10 ± 10 - 0.3 2.1 3.0 110 140 180 145 200 260 --1.0 typ max Unit V µA µA V S m m m
Marking : JF
0.85
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle a p p l i c a t i o n s that require extremely high levels of reliability, such as life-support systems, aircraft's c o n t r o l systems, or other applications whose failure can be reasonably expected to result in serious p h y s i c a l and/or material damage. Consult with your SANYO representative nearest you before using a n y SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other p a r a m e t e r s ) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
12201 TS IM TA-3149 No.6900-1/4
MCH3306
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=--10V, VGS=--10V, ID=- 2A VDS=--10V, VGS=--10V, ID=- 2A VDS=--10V, VGS=--10V, ID=- 2A IS=--2A, VGS=0 Ratings min typ 410 60 40 9 27 42 38 10 0.6 1.2 --0.88 --1.2 max Unit pF pF pF ns ns ns ns nC nC nC V
Switching Time Test Circuit
VIN 0V --4V VIN PW=10µs D.C.1% ID= --1A RL=10 VOUT VDD= --10V
D
G
P.G
50
MCH3306
S
--2.5V
--2.0
ID -- VDS
V --1. 8
--4.0
ID -- VGS
VDS= --10V
--1 .
5V
--1.6
--10V --4.0V -3.0V
--3.5 --3.0 --2.5 --2.0 --1.5
Drain Current, ID -- A
--1.2
--0.8
VGS= --1.0V
Drain Current, ID -- A
Ta= 75°
0 --0.2 --0.4 --0.6 --0.8 --1.0
--1.0 --0.5
--0.4
0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
0 --1.2 --1.4 --1.6 --1.8 --2.0
Drain-to-Source Voltage, VDS -- V
400
IT02753
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
400
25 °
C
--25
°C
C
IT02754
RDS(on) -- Ta
Ta=25°C
Static Drain-to-Source On-State Resistance, RDS(on) -- m
Static Drain-to-Source On-State Resistance, RDS(on) -- m
350 300
350 300 250 200 150 100 50 0 --60
--1.0A
250
--0.5A
200 150 100 50 0 0 --2 --4 --6 --8 --10 IT02755
ID= --0.1A
--1.8V S= 1A, V G 0. V I D= -= --2.5 , V GS --0.5A I D= = --4.0V 0A, V GS I D= --1.
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
Ambient Temperature, Ta -- °C
IT02756
No.6900-2/4
MCH3306
10
yfs -- ID
VDS= --10V
C 25°
Forward Transfer Admittance, yfs -- S
7 5 3 2
--10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2
IF -- VSD
VGS=0
1.0 7 5 3 2
Ta =7 5 25 °C °C
--0.3 --0.4 --0.5 --0.6
5°C --2 a= T C 75°
Forward Current, IF -- A
0.1 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
5
--0.01 --0.2
--0.7
--25 °C
--0.8 --0.9
--1.0
--1.1
--1.2
Drain Current, ID -- A
1000 7 5
IT02757 1000
SW Time -- ID
Diode Forward Voltage, VSD -- V
IT02758
Ciss, Coss, Crss -- VDS
Ciss
VDD= --10V VGS= --4V
Ciss, Coss, Crss -- pF
7 5 3 2
f=1MHz
Switching Time, SW Time -- ns
3 2 100 7 5 3 2 10 7 5 3 2 1.0 --0.1 2 3 5 7 2 3 5 IT02759
td(off)
tf
tr
100 7 5 3 2
Coss
Crss
td(on)
10 --1.0 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20
Drain Current, ID -- A
--10 --9
Drain-to-Source Voltage, VDS -- V
--10 7 5 3 2
IT02760
VGS -- Qg
ASO
Gate-to-Source Voltage, VGS -- V
VDS= --10V ID= --2A
Drain Current, ID -- A
IDP= --8A ID= --2A
10
<10µs
1m s
--8 --7 --6 --5 --4 --3 --2 --1 0 0 1 2 3 4 5 6 7 8 9 10 11
100µs
m
--1.0 7 5 3 2 --0.1 7 5 3 2
D
s
10 0m s
at io n er op
C
Operation in this area is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board(900mm2!0.8mm)
5 7--0.1 23 5 7--1.0 23 5 7 --10 23 5
--0.01 --0.01 2 3
Total Gate Charge, Qg -- nC
1.2
IT02761
PD -- Ta
Drain-to-Source Voltage, VDS -- V
IT02764
Allowable Power Dissipation, PD -- W
1.0
M
0.8
ou
nt
ed
on
ac
er
0.6
am
ic
bo
ar
d(
0.4
90
0m
m2 !
0.2
0.8
m
m
)
160
0 0 20 40 60 80 100 120 140
Ambient Temperature, Ta -- °C
IT02765
No.6900-3/4
Others parts begin by mc
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