|
Details, datasheet, quote on part number:MCH3307
| |
Datasheet text preview:
Ordering number : ENN7007
MCH3307
P-Channel Silicon MOSFET
MCH3307
Ultrahigh-Speed Switching Applications
Features
· · ·
Package Dimensions
unit : mm 2167A
[MCH3307]
0.25
Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.
0.3
0.15
3
2.1 1.6
0.25
0.65 2.0
0.07
2
1
3
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10µs, duty cycle1% Mounted on a ceramic board (900mm2!0.8mm) Conditions
0.85
1 : Gate 2 : Source 3 : Drain
2
1
SANYO : MCPH3
Ratings --20 ± 10 --1 --4 0.8 150 --55 to +150
Unit V V A A W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS I GSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=- 1mA, VGS=0 VDS=--20V, VGS=0 VGS=± 8V, VDS=0 VDS=--10V, ID=--1mA VDS=--10V, ID=--500mA ID=- 500mA, VGS=- 4V ID=- 300mA, VGS=- 2.5V Ratings min --20 --1 ± 10 --0.4 0.84 1.2 380 540 500 760 --1.4 typ max Unit V µA µA V S m m
Marking : JG
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle a p p l i c a t i o n s that require extremely high levels of reliability, such as life-support systems, aircraft's c o n t r o l systems, or other applications whose failure can be reasonably expected to result in serious p h y s i c a l and/or material damage. Consult with your SANYO representative nearest you before using a n y SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other p a r a m e t e r s ) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71801 TS IM TA-3312 No.7007-1/4
MCH3307
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=--10V, VGS=- 4V, ID=- 1A VDS=--10V, VGS=- 4V, ID=- 1A VDS=--10V, VGS=- 4V, ID=- 1A IS=--1A, VGS=0 Ratings min typ 115 23 15 8 6 15 7 1.5 0.4 0.3 --0.89 --1.2 max Unit pF pF pF ns ns ns ns nC nC nC V
Switching Time Test Circuit
VIN 0V --4V VIN PW=10µs D.C.1% ID= --500mA RL=20 VDD= --10V
D
VOUT
G
MCH3307 P.G 50
S
V
0V
--1.0 --0.9 --0.8
ID -- VDS
--4. 0
.5V
--2.0 --1.8 --1.6
ID -- VGS
°C Ta=
0 --0.5
--3 .
--2
--2 5
Drain Current, ID -- A
--0.7 --0.6 --0.5 --0.4 --0.3 --0.2 --0.1 0 0 --0.1 --0.2 --0.3 --0.4 --0.5
--2
.0V
Drain Current, ID -- A
--1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0
25 °C
--0.6
--0.7
--0.8
--0.9
--1.0
--1.0
75 ° --2 C 5°C
VGS= --1.5V
Ta =
--1.5
--2.0
--2.5
25°
--3.0 IT03502
Drain-to-Source Voltage, VDS -- V
1000
IT03501
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
1000
RDS(on) -- Ta
Ta=25°C
Static Drain-to-Source On-State Resistance, RDS(on) -- m
Static Drain-to-Source On-State Resistance, RDS(on) -- m
900 800 700 600 500 400 300 200 100 0 0 --2 --4 --6 --8 --10 IT03503
900 800 700 600 500 400 300 200 100 0 --60 --40 --20 0 20 40 60 80 100 120 140 160
--0.5A ID= --0.3A
--0 I D=
= --2 VGS .3A,
.5V
V
--4.0 V S= 0.5A, G I D= --
Gate-to-Source Voltage, VGS -- V
Ambient Temperature, Ta -- °C
C
IT03504
No.7007-2/4
75
°C
VDS= --10V
MCH3307
3
yfs -- ID
VDS= --10V
Forward Transfer Admittance, yfs -- S
2
--10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2
IF -- VSD
VGS=0
1.0 7 5
Ta
C 25° = --
75°
C
3 2
Forward Current, IF -- A
C 25°
Ta= 75
°C
25°C
--0.7
0.1 --0.01
2
3
5
7
--0.1
2
3
5
Drain Current, ID -- A
3 2
--1.0 IT03505
7
--0.01 --0.4
--0.5
--0.6
--25° C
--0.8 --0.9
--1.0
--1.1
--1.2
SW Time -- ID
VDD= --10V VGS= --4V
Ciss, Coss, Crss -- pF
3 2
Ciss, Coss, Crss -- VDS
f=1MHz
Diode Forward Voltage, VSD -- V
IT03506
Switching Time, SW Time -- ns
100 7 5 3 2 10 7 5 3 2 1.0 --0.1 10 2 3 5 7 --1.0 2 3 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20
Ciss
100 7 5
td(off)
td(on)
tf
3 2
tr
Coss
Crss
Drain Current, ID -- A
--4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 0.2 0.4 0.6 0.8 1.0 1.2
IT03507 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 1.4 1.6
VGS -- Qg
Drain-to-Source Voltage, VDS -- V
IT03508
ASO
Gate-to-Source Voltage, VGS -- V
VDS= --10V ID= --1A
Drain Current, ID -- A
IDP= --4A
<10µs 10 0µ s
ID= --1A
D
1 10 0ms 0m C s op er at io n
1m
s
Operation in this area is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board(900mm2!0.8mm)
2 3 5 7 --0.1 2 3 5 7 --1.0 2 3
--0.01 --0.01
Total Gate Charge, Qg -- nC
1.0
IT03509
PD -- Ta
Drain-to-Source Voltage, VDS -- V
5 7 --10 2 3 IT03510
Allowable Power Dissipation, PD -- W
0.8
M
ou
nte
do
0.6
na
ce
ram
ic
bo
0.4
ard
(9
00
mm
2
!0
0.2
.8m
m)
0 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT03511
No.7007-3/4
|
|
