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Part: MCH3309
Category:
Description: Ultrahigh-speed Switching , Package : MCPH3
Company: Sanyo Semiconductor Corporation
Datasheet: Download MCH3309 datasheet File size : 43 kB
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Datasheet text preview:
Ordering number : ENN6910
MCH3309
P-Channel Silicon MOSFET
MCH3309
Ultrahigh-Speed Switching Applications
Preliminary Features
· · ·
Package Dimensions
unit : mm 2167
[MCH3309]
0.25
0.3 0.15
Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.
3
1.6 2.1
1
0.65 2.0
2
0.25
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10µs, duty cycle1% Conditions
0.15
Specifications
1 : Gate 2 : Source 3 : Drain SANYO : MCPH3
Ratings - 20 ±10 --1.5 --6.0 0.9 150 --55 to +150 Unit V V A A W °C °C
Mounted on a ceramic board (900mm2!0.8mm)
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS I GSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss Conditions ID=--1mA, VGS=0 VDS=- 20V, VGS=0 VGS=± 8V, VDS=0 VDS=- 10V, ID=--1mA VDS=- 10V, ID=--0.8A ID=--0.8A, VGS=- 4V ID=--0.4A, VGS=- 2.5V VDS=- 10V, f=1MHz VDS=- 10V, f=1MHz VDS=- 10V, f=1MHz Ratings min --20 --1 ± 10 - 0.4 1.6 2.3 180 240 290 40 25 235 340 --1.3 typ max Unit V µA µA V S m m pF pF pF
Marking : JJ
0.85
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle a p p l i c a t i o n s that require extremely high levels of reliability, such as life-support systems, aircraft's c o n t r o l systems, or other applications whose failure can be reasonably expected to result in serious p h y s i c a l and/or material damage. Consult with your SANYO representative nearest you before using a n y SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other p a r a m e t e r s ) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
11801 TS IM TA-3058 No.6910-1/4
MCH3309
Continued from preceding page.
Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=--10V, VGS=- 4V, ID=- 1.5A VDS=--10V, VGS=- 4V, ID=- 1.5A VDS=--10V, VGS=- 4V, ID=- 1.5A IS=--1.5A, VGS=0 Ratings min typ 10 35 32 27 3.2 0.8 0.6 --0.87 --1.5 max Unit ns ns ns ns nC nC nC V
Switching Time Test Circuit
VDD= --10V VIN 0V --4V VIN PW=10µs D.C.1% ID= --0.8A RL=12.5
D
VOUT
G
P.G
50
MCH3309
S
V
--2.0 --1.8 --1.6
ID -- VDS
--3 --2 .0V .5V
--2.0 --1.8
ID -- VGS
VDS= --10V
--4.0
V
.0
V
Drain Current, ID -- A
--6.0
--2
--1.6
--1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 0 --0.1
Drain Current, ID -- A
--1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0
VGS= --1.5V
5°C
0 --0.5 --1.0
--25
--1.5
°C 25°
Ta= 7
C
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
--1.0
--2.0
--2.5 IT02732
Drain-to-Source Voltage, VDS -- V
600
IT02731
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
500
RDS(on) -- Ta
Ta=25°C
Static Drain-to-Source On-State Resistance, RDS(on) -- m
Static Drain-to-Source On-State Resistance, RDS(on) -- m
500
400
400
--0.8A
300
300
ID= --0.4A
200
200
V --2.5 S= A, VG --0.4 0V I D= = --4. , V GS --0.8A I D=
100
100
0 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10
0 --60
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
IT02733
Ambient Temperature, Ta -- °C
IT02734
No.6910-2/4
MCH3309
10
yfs -- ID
VDS= --10V
Forward Transfer Admittance, yfs -- S
7 5 3 2
--10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.01
IF -- VSD
VGS=0
25°
C
1.0 7 5 3 2
= Ta
--2
5°C
75°
C
Forward Current, IF -- A
0.1 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
5
0
--0.2
--0.4
Ta=7 5
°C 25°C --25°C
--0.6 --0.8
--1.0
--1.2
--1.4
Drain Current, ID -- A
100 7
IT02735 1000 7 5
SW Time -- ID
VDD= --10V VGS= --4V
td(off)
Diode Forward Voltage, VSD -- V
IT02736
Ciss, Coss, Crss -- VDS
f=1MHz
Switching Time, SW Time -- ns
5
3 2
Ciss, Coss, Crss -- pF
3 2
Ciss
tf
100 7 5 3 2
tr
10 7 5 3 3 5 7 --0.1 2 3
td(on)
Coss
Crss
10 5 7 --1.0 2 3 5 0 --5 --10 --15 --20 IT02738
Drain Current, ID -- A
--4
IT02737 --10 7 5 3 2
VGS -- Qg
Drain-to-Source Voltage, VDS -- V
ASO
Gate-to-Source Voltage, VGS -- V
VDS= --10V ID= --1.5A
Drain Current, ID -- A
--3
IDP= --6.0A
<10µs 10 1m 0µs s
10
DC
ID= --1.5A
--1.0 7 5 3 2 --0.1 7 5 3 2
10
op
ms
0m
tio
s
--2
era
n
--1
Operation in this area is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board(900mm2!0.8mm)
2 3 5 7 --1.0 2 3 5 7 --10 2 3 5
0
0
1
2
3
3.5 IT02739
--0.01 --0.1
Total Gate Charge, Qg -- nC
1.2
PD -- Ta
Drain-to-Source Voltage, VDS -- V
IT02740
Allowable Power Dissipation, PD -- W
1.0 0.9 0.8
M
ou
nte
do
na
0.6
ce
ram
ic
bo
ard
0.4
(9
00
mm
2
!0
0.2
.8m
m)
140 160
0 0 20 40 60 80 100 120
Ambient Temperature, Ta -- °C
IT02741
No.6910-3/4
Others parts begin by mc
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