|
Details, datasheet, quote on part number:MCH3310
| |
Datasheet text preview:
Ordering number : ENN6863
MCH3310
P-Channel Silicon MOSFET
MCH3310
Ultrahigh-Speed Switching Applications
Features
· · ·
Package Dimensions
unit : mm 2167
[MCH3310]
0.25
0.3 0.15
Low ON-resistance. Ultrahigh-speed switching. 4V drive.
3
1.6 2.1
1
0.65 2.0
2
0.25
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10µs, duty cycle1% Conditions
0.15
Specifications
1 : Gate 2 : Source 3 : Drain SANYO : MCPH3
Ratings - 30 ± 20 --1.5 --6.0 0.9 150 --55 to +150 Unit V V A A W °C °C
Mounted on a ceramic board (900mm2!0.8mm)
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS I GSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss Conditions ID=--1mA, VGS=0 VDS=- 30V, VGS=0 VGS=± 16V, VDS=0 VDS=- 10V, ID=--1mA VDS=- 10V, ID=--0.8A ID=--0.8A, VGS=- 10V ID=--0.4A, VGS=- 4V VDS=- 10V, f=1MHz VDS=- 10V, f=1MHz VDS=- 10V, f=1MHz Ratings min --30 --1 ± 10 - 1.2 1.0 1.5 210 360 185 30 20 270 500 --2.6 typ max Unit V µA µA V S m m pF pF pF
Marking : JK
0.85
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle a p p l i c a t i o n s that require extremely high levels of reliability, such as life-support systems, aircraft's c o n t r o l systems, or other applications whose failure can be reasonably expected to result in serious p h y s i c a l and/or material damage. Consult with your SANYO representative nearest you before using a n y SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other p a r a m e t e r s ) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
13001 TS IM TA-3060 No.6863-1/4
MCH3310
Continued from preceding page.
Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=--10V, VGS=- 10V, ID=- 1.5A VDS=--10V, VGS=- 10V, ID=- 1.5A VDS=--10V, VGS=- 10V, ID=- 1.5A IS=--1.5A, VGS=0 Ratings min typ 7 4 22 8 4.7 0.8 0.7 --0.89 --1.5 max Unit ns ns ns ns nC nC nC V
Switching Time Test Circuit
VDD= --15V VIN 0V --10V VIN PW=10µs D.C.1% ID= --0.8A RL=18.7
D
VOUT
G
P.G
50
MCH3310
S
--2.0
ID -- VDS
--6 --5 V V
--2.0 --1.8
ID -- VGS
VDS= --10V
--1.8 --1.6
--8V
V
Drain Current, ID -- A
V
--4
--1.6
Drain Current, ID -- A
--10
--1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 0 --0.1 --0.2
--1.4 --1.2 --1.0 --0.8 --0.6
VGS= --3V
--0.2 0 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 --0.5 --1.0 --1.5 --2.0
Ta= 7
--0.4
5°C --25 °C 25°C
--2.5 --3.0 --3.5
--4.0
Drain-to-Source Voltage, VDS -- V
800
IT02742
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
600
IT02743
RDS(on) -- Ta
Ta=25°C
Static Drain-to-Source On-State Resistance, RDS(on) -- m
Static Drain-to-Source On-State Resistance, RDS(on) -- m
700 600 500 400 300 200 100 0 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10
500
ID= --0.4A --0.8A
400
I D=
300
A, --0.4
V = --4 VGS
--10 V GS= V
0.8A, I D= -200
100
0 --60
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
IT02744
Ambient Temperature, Ta -- °C
IT02745
No.6863-2/4
MCH3310
5
yfs -- ID
VDS= --10V
Forward Transfer Admittance, yfs -- S
3
--10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2
IF -- VSD
VGS=0
25°
1.0 7 5 3 2
C
= Ta
--2
C 5°
°C 75
Forward Current, IF -- A
2
0.1 --0.01
--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4
Drain Current, ID -- A
100 7
IT02746 1000 7 5 3 2
SW Time -- ID
VDD= --15V VGS= --10V
Diode Forward Voltage, VSD -- V
Ta=75 °C 25°C --25°C
IT02747
Ciss, Coss, Crss -- VDS
f=1MHz
Switching Time, SW Time -- ns
5
Ciss, Coss, Crss -- pF
3 2
td(off)
Ciss
10 7 5 3 2
td(on)
tf
100 7 5 3 2
tr
Coss
Crss
0 --5 --10 --15 --20 --25 --30 IT02749
1.0 3 5 7 --0.1 2 3 5 7 --1.0 2 3
10
Drain Current, ID -- A
--10
IT02748 --10 7 5 3 2
VGS -- Qg
Drain-to-Source Voltage, VDS -- V
ASO
Gate-to-Source Voltage, VGS -- V
VDS= --10V ID= --1.5A
--8
IDP= --6.0A
<10µs
1 1m 00µs s
Drain Current, ID -- A
ID= --1.5A
DC
10
--6
--1.0 7 5 3 2 --0.1 7 5 3 2
10
op
ms
0m
tio
s
era
n
--4
Operation in this area is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board(900mm2!0.8mm)
2 3 5 7 --1.0 2 3 5 7 --10 2 3
--2
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
--0.01 --0.1
Total Gate Charge, Qg -- nC
1.2
IT02750
PD -- Ta
Drain-to-Source Voltage, VDS -- V
5 7 --100 IT02751
Allowable Power Dissipation, PD -- W
1.0 0.9 0.8
M
ou
nte
do
na
0.6
ce
ram
ic
bo
ard
0.4
(9
00
mm
2
!0
0.2
.8m
m)
140 160
0 0 20 40 60 80 100 120
Ambient Temperature, Ta -- °C
IT02752
No.6863-3/4
|
|
