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Details, datasheet, quote on part number:MCH3312
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Datasheet text preview:
Ordering number : ENN7009
MCH3312
P-Channel Silicon MOSFET
MCH3312
Ultrahigh-Speed Switching Applications
Features
· · ·
Package Dimensions
unit : mm 2167A
[MCH3312]
0.25
Low ON-resistance. Ultrahigh-speed switching. 4V drive.
0.3
0.15
3
2.1 1.6
0.25
0.65 2.0
0.07
2
1
3
0.85
1 : Gate 2 : Source 3 : Drain
2
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10µs, duty cycle1% Mounted on a ceramic board (900mm2!0.8mm) Conditions
1
SANYO : MCPH3
Ratings - 30 ±20 --2 --8 1 150 --55 to +150
Unit V V A A W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS I GSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=--1mA, VGS=0 VDS=- 30V, VGS=0 VGS=± 16V, VDS=0 VDS=- 10V, ID=--1mA VDS=- 10V, ID=- 1A ID=--1A, VGS=- 10V ID=--0.5A, VGS=- 4V Ratings min --30 --1 ± 10 --1.2 1.4 2.0 110 205 145 290 --2.6 typ max Unit V µA µA V S m m
Marking : JM
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle a p p l i c a t i o n s that require extremely high levels of reliability, such as life-support systems, aircraft's c o n t r o l systems, or other applications whose failure can be reasonably expected to result in serious p h y s i c a l and/or material damage. Consult with your SANYO representative nearest you before using a n y SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other p a r a m e t e r s ) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71801 TS IM TA-3098 No.7009-1/4
MCH3312
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=--10V, VGS=- 10V, ID=--2A VDS=--10V, VGS=- 10V, ID=--2A VDS=--10V, VGS=- 10V, ID=--2A IS=--2A, VGS=0 Ratings min typ 200 47 32 7.2 2.9 21 8.7 5.5 0.98 0.82 --0.85 --1.5 max Unit pF pF pF ns ns ns ns nC nC nC V
Switching Time Test Circuit
VIN 0V --10V VIN PW=10µs D.C.1% ID= --1A RL=15 VDD= --15V
D
VOUT
G
MCH3312 P.G 50
S
V
--2.0
ID -- VDS
V
--10. 0
--5.0 --4.5 --4.0
ID -- VGS
VDS= --10V
--6.0
--1.6
Drain Current, ID -- A
--4.
0V
. --3
--1.2
5V
Drain Current, ID -- A
--3.5 --3.0 --2.5 --2.0
--0.8
VGS= --3.0V
--0.4
--1.0 --0.5
0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
0 0 --0.5 --1.0 --1.5 --2.0
--2.5
5°C 25 °C --25° C
--3.0 --3.5
--1.5
Ta= 7
--4.0
--4.5
Drain-to-Source Voltage, VDS -- V
400
IT03223
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
400
IT03224
RDS(on) -- Ta
Ta=25°C
Static Drain-to-Source On-State Resistance, RDS(on) -- m
Static Drain-to-Source On-State Resistance, RDS(on) -- m
350 300 250
350 300 250 200 150 100 50 0 --60
--1.0A
200
-I D=
, VG 0.5A
--4 S=
V
ID= --0.5A
150 100 50 0 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20
--10 V S= 1.0A, G I D= --
V
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
IT03225
Ambient Temperature, Ta -- °C
IT03226
No.7009-2/4
MCH3312
10
yfs -- ID
VDS= --10V
Forward Transfer Admittance, yfs -- S
7 5 3 2
--10 7 5
IF -- VSD
VGS=0
25
°C
Forward Current, IF -- A
3 2 --1.0 7 5 3 2 --0.1 7 5 3 2
1.0 7 5 3 2
°C -25 °C =75 Ta
Ta=7 5°C
--0.3 --0.4 --0.5 --0.6
0.1 --0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Drain Current, ID -- A
2 100
5 7 --10 IT03227
--0.01 --0.2
25°C --25°C
--0.7 --0.8 --0.9
--1.0
--1.1
--1.2
SW Time -- ID
3 2
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
Diode Forward Voltage, VSD -- V
IT03228
VDD= --15V VGS= --10V
Switching Time, SW Time -- ns
7 5 3 2 10 7 5 3 2 1.0 --0.1 10 2 3 5 7 --1.0 2 3 5 IT03229 --10 7 5 3 2 0 --5 --10 --15 --20 --25 --30 IT03230
Ciss, Coss, Crss -- pF
100 7 5
td(off)
td(on)
tf
Coss
3 2
Crss
tr
Drain Current, ID -- A
--10 --9
VGS -- Qg
Drain-to-Source Voltage, VDS -- V
ASO
Gate-to-Source Voltage, VGS -- V
VDS= --10V ID= --2A
IDP= --8A
<10µs
10 s 0µ
1m
--8
ID= --2A
s
10 m
Drain Current, ID -- A
s
--7 --6 --5 --4 --3 --2 --1 0 0 1 2 3 4 5 6 IT03231
10
--1.0 7 5 3 2 --0.1 7 5 3 2
Operation in this area is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board(900mm2!0.8mm)
5 7--0.1 23 5 7--1.0 2 3 5 7 --10 23
DC
0m s
op er
ati on
--0.01 --0.01 2 3
Total Gate Charge, Qg -- nC
1.2
PD -- Ta
Drain-to-Source Voltage, VDS -- V
5 7--100 IT03232
Allowable Power Dissipation, PD -- W
1.0
M
0.8
ou
nt
ed
on
ac
er
0.6
am
ic
bo
ar
d(
0.4
90
0m
m2 !
0.2
0.8
m
m
)
160
0 0 20 40 60 80 100 120 140
Ambient Temperature, Ta -- °C
IT03233
No.7009-3/4
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