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Details, datasheet, quote on part number:MCH3317
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Datasheet text preview:
Ordering number : ENN7222
MCH3317
P-Channel Silicon MOSFET
MCH3317
Ultrahigh-Speed Switching Applications
Features
· · ·
Package Dimensions
unit : mm 2167A
[MCH3317]
0.25
Low ON-resistance. Ultrahigh-speed switching. 1.8V drive.
0.3 3
0.15
2.1
1.6
0.25
0.65 2.0
(Bottom view)
0.07
2
1
3
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10µs, duty cycle1% Conditions
1 : Gate 2 : Source 3 : Drain
1 2
(Top view)
0.85
SANYO : MCPH3
Unit --12 ±10 --1.5 --6 0.8 150 --55 to +150 V V A A W °C °C
Ratings
Mounted on a ceramic board (900mm2!0.8mm)
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS I GSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Conditions ID=- 1mA, VGS=0 VDS=--12V, VGS=0 VGS=±8V, VDS=0 VDS=--6V, ID=--1mA VDS=--6V, ID=- 0.8A ID=- 0.8A, VGS=--4.5V ID=- 0.4A, VGS=--2.5V ID=- 0.1A, VGS=--1.8V Ratings min --12 --10 ±10 --0.3 1.3 1.8 220 320 430 290 450 650 --1.0 typ max Unit V µA µA V S m m m
Marking : JS
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle a p p l i c a t i o n s that require extremely high levels of reliability, such as life-support systems, aircraft's c o n t r o l systems, or other applications whose failure can be reasonably expected to result in serious p h y s i c a l and/or material damage. Consult with your SANYO representative nearest you before using a n y SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other p a r a m e t e r s ) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72602 TS IM TA-100099 No.7222-1/4
MCH3317
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=- 6V, f=1MHz VDS=- 6V, f=1MHz VDS=- 6V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=- 6V, VGS=- 4.5V, ID=--1.5A VDS=- 6V, VGS=- 4.5V, ID=--1.5A VDS=- 6V, VGS=- 4.5V, ID=--1.5A IS=--1.5A, VGS=0 Ratings min typ 160 45 35 11 45 29 30 2.6 0.25 0.65 --0.92 --1.5 max Unit pF pF pF ns ns ns ns nC nC nC V
Switching Time Test Circuit
VIN 0V --4.5V VIN PW=10µs D.C.1% ID= --0.8A RL=7.5 VDD= --6V
D
VOUT
G
MCH3317 P.G 50
S
C
--1.5
ID -- VDS
--4
--2.0
ID -- VGS
Ta= --25 °
--3
VV .5 -3.0 2.5V -Drain Current, ID -- A
--1.5
Drain Current, ID -- A
--0.9
--1.8
V
--1.5V
--0.6
--1.0
°C
--0.5
0 0
0 --0.1 --0.2 --0.3 --0.4 --0.5 IT04353 0 --0.5 --1.0
25°
VGS= --1.0V
C
--25
--0.3
Ta= 75
°C
--1.5
--2.0
25°
--2.5
--1.2
C
75°
.5
V
VDS= --6V
C
--3.0 IT04354
Drain-to-Source Voltage, VDS -- V
800
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
800
RDS(on) -- Ta
Ta=25°C
Static Drain-to-Source On-State Resistance, RDS(on) -- m
Static Drain-to-Source On-State Resistance, RDS(on) -- m
700 600
700 600 500 400 300 200 100 0 --60
--0.8A
500 400 300 200 100 0 0 --1 --2 --3 --4 --5 --6 --7 --8
ID= --0.4A
8V = --1. A, VGS 0.1 I D= ---2.5V S= .4A, V G 0 I D= -= --4.5V 8A, V GS I D= --0.
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
IT04355
Ambient Temperature, Ta -- °C
IT04356
No.7222-2/4
MCH3317
5
yfs -- ID
VDS= --6V
5 3
IF -- VSD
VGS=0
Forward Transfer Admittance, yfs -- S
3
°C 25
1.0 7 5 3 2
= Ta
5 --2
°C
Forward Current, IF -- A
2
2
--1.0 7 5
7
5°C
°C 25°C
3 2
0.1 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
--0.1 --0.4
--0.6
Ta=7 5
--0.8
--25°C
--1.0
--1.2
--1.4 IT04358
Drain Current, ID -- A
3 2
IT04357 5 3 2
SW Time -- ID
Ciss, Coss, Crss -- VDS
f=1MHz
Diode Forward Voltage, VSD -- V
VDD= --6V VGS= --4.5V
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
100 7 5 3 2
tr
td(off)
Ciss
tf
100 7 5 3 2
td(on)
10 7 5 3 2 --0.1
Coss
Crss
10 2 3 5 7 --1.0 2 3 0 --2 --4 --6 --8 --10 --12 IT04360
Drain Current, ID -- A
--4.5 --4.0
IT04359 --10 7 5 3 2
VGS -- Qg
VDS= --6V ID= --1.5A
Drain Current, ID -- A
Drain-to-Source Voltage, VDS -- V
ASO
IDP= --6.0A
10
<10µs
Gate-to-Source Voltage, VGS -- V
1m
ID= --1.5A
ms
s
--3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 IT04361
--1.0 7 5 3 2 --0.1 7 5 3 2
DC
Operation in this area is limited by RDS(on).
10
0m
op
s
era
tio
n
--0.01 --0.1
Ta=25°C Single pulse Mounted on a ceramic board(900mm2!0.8mm)
2 3 5 7 --1.0 2 3 5
Total Gate Charge, Qg -- nC
1.0
PD -- Ta
Drain-to-Source Voltage, VDS -- V
7 --10 2 IT04362
Allowable Power Dissipation, PD -- W
0.8
M
0.6
ou
nt
ed
on
ac
er
am
ic
0.4
bo
ar
d(
90
0m
0.2
m2 !0
.8m
m
)
160
0 0 20 40 60 80 100 120 140
Ambient Temperature, Ta -- °C
IT04363
No.7222-3/4
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