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Details, datasheet, quote on part number:MCH3318
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Datasheet text preview:
Ordering number : ENN7213
MCH3318
P-Channel Silicon MOSFET
MCH3318
Ultrahigh-Speed Switching Applications
Features
· · ·
Package Dimensions
unit : mm 2167A
[MCH3318]
0.25
Low ON-resistance. Ultrahigh-speed switching. 1.8V drive.
0.3 3
0.15
2.1
1.6
0.25
0.65 2.0
(Bottom view)
0.07
2
1
3
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10µs, duty cycle1% Conditions
1 : Gate 2 : Source 3 : Drain
1 2
(Top view)
0.85
SANYO : MCPH3
Unit --12 ±8 --2 --8 0.9 150 --55 to +150 V V A A W °C °C
Ratings
Mounted on a ceramic board (900mm2!0.8mm)
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS I GSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Conditions ID=- 1mA, VGS=0 VDS=--12V, VGS=0 VGS=±6.4V, VDS=0 VDS=--6V, ID=--1mA VDS=--6V, ID=- 1A ID=- 1A, VGS=--4.5V ID=- 0.5A, VGS=--2.5V ID=- 0.2A, VGS=--1.8V Ratings min --12 --10 ±10 --0.3 2.0 2.9 110 160 220 145 225 330 --1.0 typ max Unit V µA µA V S m m m
Marking : JT
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle a p p l i c a t i o n s that require extremely high levels of reliability, such as life-support systems, aircraft's c o n t r o l systems, or other applications whose failure can be reasonably expected to result in serious p h y s i c a l and/or material damage. Consult with your SANYO representative nearest you before using a n y SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other p a r a m e t e r s ) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72602 TS IM TA-3485 No.7213-1/4
MCH3318
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=- 6V, f=1MHz VDS=- 6V, f=1MHz VDS=- 6V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=- 6V, VGS=- 4.5V, ID=--2.0A VDS=- 6V, VGS=- 4.5V, ID=--2.0A VDS=- 6V, VGS=- 4.5V, ID=--2.0A IS=--2.0A, VGS=0 Ratings min typ 310 90 80 14 53 53 52 4.6 0.7 1.3 --0.89 --1.5 max Unit pF pF pF ns ns ns ns nC nC nC V
Switching Time Test Circuit
VIN 0V --4.5V VIN PW=10µs D.C.1% ID= --1.0A RL=6.0 VDD= --6V
D
VOUT
G
MCH3318 P.G 50
S
--2.0
ID -- VDS
0V
V
5V --3 .
--2.0 --1.8 --1.6
ID -- VGS
VDS= --6V
Drain Current, ID -- A
--3 .
--1.6 --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 0
--2
--1.8
.5
Drain Current, ID -- A
5V
--4 .
8 --1.
V
--1.4 --1.2 --1.0 --0.8 --0.6 --0.4
--1.5
V
Ta= 75° C
0 --0.5 --1.0
0 --0.1 --0.2 --0.3 --0.4 --0.5 IT04314 --1.5 --2.0 --2.5 IT04315
Drain-to-Source Voltage, VDS -- V
400
RDS(on) -- VGS
Ta=25°C
Static Drain-to-Source On-State Resistance, RDS(on) -- m
Gate-to-Source Voltage, VGS -- V
400
RDS(on) -- Ta
Static Drain-to-Source On-State Resistance, RDS(on) -- m
300
300
25
VGS= --1.0V
--0.2
°C
--25° C
--1.0A ID= --0.5A
200
200
100
100
5V = --2. , V GS --0.5A I D= --4.5V V S= --1.0A, G I D=
I D=
= --1. , VGS --0.2A
8V
0 0 --1 --2 --3 --4 --5 --6 --7 --8
0 --60
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
IT04316
Ambient Temperature, Ta -- °C
IT04317
No.7213-2/4
MCH3318
10
yfs -- ID
VDS= --6V
--10 7 5
IF -- VSD
VGS=0
Forward Transfer Admittance, yfs -- S
7
Forward Current, IF -- A
5
3 2
3 2
25
°C
Ta=7 5°C 25°C
--0.6
°C -25 =Ta C 75°
--1.0 7 5 3 2
1.0 7 5 --0.1
2
3
5
7
--1.0
2
3
5 IT04318
--0.1 --0.4
--0.8
--25°C
--1.0
--1.2
--1.4 IT04319
Drain Current, ID -- A
3 2
SW Time -- ID
VDD= --6V VGS= --4.5V
Ciss, Coss, Crss -- pF
1000 7 5
Ciss, Coss, Crss -- VDS
f=1MHz
Diode Forward Voltage, VSD -- V
Switching Time, SW Time -- ns
100 7 5
td(off)
tr
tf
3 2
Ciss
3 2
100 7
Coss
Crss
td(on)
10 --0.1 2 3 5 7 --1.0 2 3 5 IT04320
5
3 0 --2 --4 --6 --8 --10 --12 IT04321
Drain Current, ID -- A
--4.5 --4.0
VGS -- Qg
VDS= --6V ID= --2A
Drain Current, ID -- A
Drain-to-Source Voltage, VDS -- V
2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2
ASO
IDP= --8A ID= --2A
10
<10µs
Gate-to-Source Voltage, VGS -- V
1m
ms
--3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
s
100µs
DC
10
op
0m
era
s
tio
n
Operation in this area is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board(900mm2!0.8mm)
2 3 5 7 --1.0 2 3 5 7 --10 2 3
--0.01 --0.1
Total Gate Charge, Qg -- nC
1.2
IT04322
PD -- Ta
Drain-to-Source Voltage, VDS -- V
IT04323
Allowable Power Dissipation, PD -- W
1.0 0.9 0.8
M
ou
nte
do
na
ce
0.6
ram
ic
bo
ard
0.4
(9
00
mm
2
!0
0.2
.8m
m)
140 160
0 0 20
Ambient Temperature, Ta -- °C
40
60
80
100
120
IT04324
No.7213-3/4
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