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Details, datasheet, quote on part number:MCH3319
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Datasheet text preview:
Ordering number : ENN7199
MCH3319
P-Channel Silicon MOSFET
MCH3319
Ultrahigh-Speed Switching Applications
Features
· · ·
Package Dimensions
unit : mm 2167A
[MCH3319]
0 .2 5
Low ON-resistance. Ultrahigh-speed switching. 1.8V drive.
0.3
0.15
3
2.1 1.6
0.25
0.65 2.0
(Bottom view)
0.07
2
1
3
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10µs, duty cycle1% Conditions
1 : Gate 2 : Source 3 : Drain
1 2
(Top view)
0.85
SANYO : MCPH3
Unit --12 ±8 --2.6 - 10.4 1.0 150 --55 to +150 V V A A W °C °C
Ratings
Mounted on a ceramic board (900mm2!0.8mm)
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS I DSS I GSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Conditions ID=- 1mA, VGS=0 VDS=--12V, VGS=0 VGS=± 6.4V, VDS=0 VDS=--6V, ID=--1mA VDS=--6V, ID=- 1.3A ID=- 1.3A, VGS=--4.5V ID=- 0.7A, VGS=--2.5V ID=- 0.3A, VGS=--1.8V Ratings min --12 --10 ± 10 --0.3 2.9 4.2 75 110 150 98 155 255 --1.0 typ max Unit V µA µA V S m m m
Marking : JU
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle a p p l i c a t i o n s that require extremely high levels of reliability, such as life-support systems, aircraft's c o n t r o l systems, or other applications whose failure can be reasonably expected to result in serious p h y s i c a l and/or material damage. Consult with your SANYO representative nearest you before using a n y SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other p a r a m e t e r s ) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
41002 TS IM TA-3486 No.7199-1/4
MCH3319
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=- 6V, f=1MHz VDS=- 6V, f=1MHz VDS=- 6V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=- 6V, VGS=- 4.5V, ID=--2.6A VDS=- 6V, VGS=- 4.5V, ID=--2.6A VDS=- 6V, VGS=- 4.5V, ID=--2.6A IS=--2.6A, VGS=0 Ratings min typ 450 100 85 15 70 65 50 6.5 0.8 2.0 --0.87 --1.5 max Unit pF pF pF ns ns ns ns nC nC nC V
Switching Time Test Circuit
VIN 0V --4.5V VIN PW=10µs D.C.1% ID= --1.3A RL=4.6 VDD= --6V
D
VO U T
G
MCH3319 P.G 5 0
S
--3.0
ID -- VDS
0V
--3.0
ID -- VGS
VDS= --6V
5V --3 .
--2.5
Drain Current, ID -- A
--3 .
--2
.5
V
--2.5
Drain Current, ID -- A
5V
--2.0
--4 .
8 --1.
V
--2.0
--1.5
V --1.5
--1.5
0 0
--0.1
--0.2
--0.3
--0.4
--0.5 IT04325
0 --0.2
--0.4
--0.6
--0.8
--1.0
--1.2
25
--1.4
VGS= --1.0V
°C
--0.5
--0.5
Ta= 75
--1.0
--1.0
°C --25 °C
--1.6
--1.8
Drain-to-Source Voltage, VDS -- V
250
RDS(on) -- VGS
Ta=25°C
Static Drain-to-Source On-State Resistance, RDS(on) -- m
Gate-to-Source Voltage, VGS -- V
300
IT04326
RDS(on) -- Ta
Static Drain-to-Source On-State Resistance, RDS(on) -- m
200
250
200
150
ID= --0.7A --1.3A
100
150
I D=
, --0.3A
= --1 VGS
.8V
100
--4.5V A, V GS= I D= --1.3
.7 I D= --0
= --2.5 A, V GS
V
50
50
0 0 --1 --2 --3 --4 --5 --6 --7 --8
0 --60
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
IT04327
Ambient Temperature, Ta -- °C
IT04328
No.7199-2/4
MCH3319
3
yfs -- ID
VDS= --6V
--10 7 5
IF -- VSD
VGS=0
Forward Transfer Admittance, yfs -- S
2
Forward Current, IF -- A
10 7 5 3 2
3 2
25°C
°C --25 Ta=
C 75°
--1.0 7 5
Ta= 75°C
3 2
25°C
1.0 7 5 --0.1 2 3 5 7 --1.0 2 3 5 7
--0.1 --0.4
--0.6
--25°C
--0.8
--1.0
--1.2 IT04330
Drain Current, ID -- A
5 3
IT04329 1000 7 5
SW Time -- ID
VDD= --6V VGS= --4.5V
Ciss, Coss, Crss -- pF
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
Diode Forward Voltage, VSD -- V
Switching Time, SW Time -- ns
2
tr
100 7 5 3 2
3 2
td(off)
tf
100 7
Coss
Crss
td(on)
2 3 5 7 --1.0 2 3 5 7
5
10 --0.1
3 0 --2 --4 --6 --8 --10 --12 IT04332
Drain Current, ID -- A
--4.5 --4.0
IT04331 2 --10 7 5
VGS -- Qg
VDS= --6V ID= --2.6A
Drain Current, ID -- A
Drain-to-Source Voltage, VDS -- V
ASO
IDP= --10.4A ID= --2.6A
10
DC 100 op ms er ati on
Gate-to-Source Voltage, VGS -- V
<10µs 1m s
ms
--3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 1 2 3 4 5 6 7 IT04333
3 2 --1.0 7 5 3 2 --0.1 7 5 3 2
Operation in this area is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board(900mm2!0.8mm)
23 5 7 --0.1 23 5 7 --1.0 23
--0.01 --0.01
Total Gate Charge, Qg -- nC
1.2
PD -- Ta
Drain-to-Source Voltage, VDS -- V
5 7 --10 2 IT04334
Allowable Power Dissipation, PD -- W
1.0
M
ou
nt
0.8
ed
on
ac
er
am
0.6
ic
bo
ar
d(
90
0.4
0m
m2 !
0.8
0.2
m
m
)
0 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT04335
No.7199-3/4
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