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Details, datasheet, quote on part number:MCH3339
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Datasheet text preview:
Ordering number : ENN7414
MCH3339
P-Channel Silicon MOSFET
MCH3339
Ultrahigh-Speed Switching Applications
Features
· ·
Package Dimensions
unit : mm 2167A
0.25
Low ON-resistance. Ultrahigh-speed switching.
0.3 3
[MCH3339]
0.15
2.1
1.6
0.25
0.65 2.0
(Bottom view)
0.07
2
1
3
1 : Gate 2 : Source 3 : Drain
1 2
(Top view)
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10µs, duty cycle1% Mounted on a ceramic board (900mm2!0.8mm) Conditions
0.85
SANYO : MCPH3
Ratings - 12 ±12 --1.5 --6 0.8 150 --55 to +150
Unit V V A A W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS I GSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Conditions ID=--1mA, VGS=0 VDS=- 12V, VGS=0 VGS=±9.6V, VDS=0 VDS=- 6V, ID=--1mA VDS=- 6V, ID=--0.8A ID=--0.8A, VGS=- 10V ID=--0.4A, VGS=- 4.5V ID=--0.1A, VGS=- 4V Ratings min --12 --1 ±10 --1 0.9 1.4 200 340 370 270 490 530 --2.4 typ max Unit V µA µA V S m m m
Marking :YQ
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle a p p l i c a t i o n s that require extremely high levels of reliability, such as life-support systems, aircraft's c o n t r o l systems, or other applications whose failure can be reasonably expected to result in serious p h y s i c a l and/or material damage. Consult with your SANYO representative nearest you before using a n y SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other p a r a m e t e r s ) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
13003 TS IM TA-3821 No.7414-1/4
MCH3339
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=--6V, f=1MHz VDS=--6V, f=1MHz VDS=--6V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--10V, VGS=- 10V, ID=--1.5A VDS=--10V, VGS=- 10V, ID=--1.5A VDS=--10V, VGS=- 10V, ID=--1.5A IS=--1.5A, VGS=0 Ratings min typ 145 45 35 7.5 20 16 12 3.8 0.5 0.5 --0.94 --1.5 max Unit pF pF pF ns ns ns ns nC nC nC V
Switching Time Test Circuit
VIN 0V --10V VIN PW=10µs D.C.1% ID= --0.8A RL=12.5 VDD= --10V
D
VOUT
G
MCH3339 P.G 50
S
--2.0
ID -- VDS
.5V
--1 0
--4
--2.0
ID -- VGS
VDS= --10V
--6 .
--1.6
--4
--1.8
.
0V
0V
V
--1.8 --1.6
Drain Current, ID -- A
--1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8
Drain Current, ID -- A
V --3.0
--1.4 --1.2 --1.0 --0.8
VGS= --2.5V
--0.4 --0.2 0 --0.9 --1.0 0 --0.5 --1.0 --1.5
Ta =7 5°C --2 5° C
--2.0 --2.5
--0.6
25
°C
--3.0
--3.5
Drain-to-Source Voltage, VDS -- V
800
IT05613
RDS(on) -- VGS
ID= --0.4A
Gate-to-Source Voltage, VGS -- V
800
IT05614
RDS(on) -- Ta
Ta=25°C
Static Drain-to-Source On-State Resistance, RDS(on) -- m
Static Drain-to-Source On-State Resistance, RDS(on) -- m
700 600 500 400 300 200 100 0 0
700 600 500 400 300 200 100 0 --60
--2
--0.8A I D= 1A
--4 --6 --8 --10 --12 IT05615
I D= --0.
0V = --4. A, VGS 0.1 5V I D= -= --4. , VGS --0.4A I D= --10V A, V GS= I D= --0.8
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
Ambient Temperature, Ta -- °C
IT05616
No.7414-2/4
MCH3339
10
yfs -- ID
VDS= --10V Forward Drain Current, IF -- A
Forward Transfer Admittance, yfs -- S
7 5 3 2
--10 7 5 3 2 --1.0 7 5
IF -- VSD
VGS=0
5 3 2
--0.1 7 5 3 2
0.1 --0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Drain Current, ID -- A
1000 7 5
5 7 --10 IT05617
--0.01 --0.4
--0.6
Ta =
--0.8
75 ° C
7
--2 5°C 25° C
1.0
5°C --2 C 5° Ta= 2 C 75°
3 2
--1.0
--1.2 IT05618
SW Time -- ID
VDD= --10V VGS= --10V Ciss, Coss, Crss -- pF
3 2
Ciss, Coss, Crss -- VDS
f=1MHz
Diode Forward Voltage, VSD -- V
Switching Time, SW Time -- ns
3 2 100 7 5 3 2 10 7 5 3 2 1.0 --0.01 10 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 IT05619 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 0 1 2 3 4 IT05621 0 --2 --4
Ciss
100 7 5
td(off)
tf
td(on)
tr
Coss Crss
3 2
--6
--8
--10
--12 IT05620
Drain Current, ID -- A
--10 --9
VGS -- Qg
Drain-to-Source Voltage, VDS -- V
ASO
Gate-to-Source Voltage, VGS -- V
VDS= --10V ID= --1.5A Drain Current, ID -- A
IDP= --6A
1m s
<10µs
--8 --7 --6 --5 --4 --3 --2 --1 0
ID= --1.5A
10
m
10
D
Operation in this area is limited by RDS(on).
s
0m
s
--0.01 --0.01
Ta=25°C Single pulse Mounted on a ceramic board(900mm2!0.8mm) 1unit
2 3 5 7 --0.1 2 3 5 7 --1.0 2 3
C op er
at io n
5 7 --10 2 3 IT05622
Total Gate Charge, Qg -- nC
1.0
PD -- Ta
Drain-to-Source Voltage, VDS -- V
Allowable Power Dissipation, PD -- W
0.8
M
ou
nt
ed
0.6
on
ac
er
am
ic
bo
0.4
ar
d(
90
0m
0.2
m2 !0
.8m
m
)
140 160
0 0 20 40 60 80 100 120
Ambient Temperature, Ta -- °C
IT05623
No.7414-3/4
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