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Part: MCH3401
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
Description:
Company: Sanyo Semiconductor Corporation
Datasheet: Download MCH3401 datasheet File size : 43 kB
Request For quote: Find where to buy MCH3401
Datasheet text preview:
Ordering number:ENN6443
N-Channel Silicon MOSFET
MCH3401
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance. · Ultrahigh-speed swithcing. · 2.5V drive.
Package Dimensions
unit:mm 2167
[MCH3401]
0.25
0.3 3
0.15
1.6
1 0.65 2.0
2
0.25 0.85
2.1
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10µs, duty cycle1% Mounted on a ceramic board (900mm2×0.8mm) Conditions
1 : Gate 2 : Source 3 : Drain SANYO : MCPH3
0.15
Ratings 30 ±10 1.4 5.6 1 150 55 to +150
Unit V V A A W °C °C
Electrical Characteristics at Ta = 25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=±8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=700mA ID=700mA, VGS=4V ID=400mA, VGS=2.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz 0.4 1.6 2.3 250 310 90 50 20 325 435 Conditions Ratings min 30 10 ±10 1.3 typ max Unit V µA µA V S m m pF pF pF
Marking : KA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle a p p l i c a t i o n s that require extremely high levels of reliability, s u c h as life-support systems, a i r c r a f t ' s c o n t r o l systems, o r other applications whose failure can be reasonably expected to result in serious p h y s i c a l and/or material damage. Consult with your SANYO representative nearest you before using a n y SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other p a r a m e t e r s ) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
30300TS (KOTO) TA-2455 No.6443-1/4
MCH3401
Continued from preceding page.
Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=10V, VGS=10V, ID=1.4A VDS=10V, VGS=10V, ID=1.4A VDS=10V, VGS=10V, ID=1.4A IS=1.4A, VGS=0 Ratings min typ 10 13 28 20 6 1 2 0.9 1.2 max Unit ns ns ns ns nC nC nC V
Switching Time Test Circuit
VDD=15V VIN 4V 0V VIN ID=700mA RL=21.4
D
PW=10µs D.C.1%
VOUT
G
P.G
50
S
MCH3401
1.4
ID -- VDS
V4 .0V
3.0 V 2.5 V
2.0
ID -- VGS
VDS=10V
1.2
6.0
V 2.0
Drain Current, ID A
1.8 1.6 1.4 1.2 1.0
Drain Current, ID A
0.8
0.6
8.0
V
1.0
Ta =
0.2 0.2 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0 0.5 1.0
1.5
25°
0.4
75 °C
0.4
0.6
C --25°C
2.0
VGS=1.5V
0.8
2.5 IT01600
Drain-to-Source Voltage, VDS V
500 450
IT01599
Gate-to-Source Voltage, VGS V
500 450
RDS(on) -- VGS
Ta=25°C
Static Drain-to-Source On-State Resistance, RDS (on) m
RDS(on) -- Ta
Static Drain-to-Source On-State Resistance, RDS (on) m
400 350 300 250 200 150 100 50 0 0 1 2
0.7A ID=0.4A
400 350 300 250 200 150 100 --60
5V =2. V GS A, V 0.4 4.0 I D= S= , VG A 0.7 I D=
3
4
5
6
7
8
9
10
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS V
IT01601
Ambient Temperature, Ta °C
IT01602
No.6443-2/4
MCH3401
10
yfs -- ID
VDS=10V
Forward Transfer Admittance, | yfs | S
7 5 3 2
10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2
IF -- VSD
VGS = 0
Ta
1.0 7 5 3 2
°C 25 =--
Forward Current, IF A
75
°C
25°
C
0.1 0.01
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3
Drain Current, ID A
100 7
5 7 10 IT01603 1000 7 5 3
0
0.2
0.4
Ta= 75° 25°C C --25° C
0.6 0.8
1.0
1.2
1.4 IT01604
Diode Forward Voltage, VSD V
SW Time -- ID
VDD=15V VGS=4V td(off)
tr
Ciss, Coss, Crss -- VDS
f=1MHz
Switching Time, SW Time ns
5
2
tf td(on)
Ciss, Coss, Crss pF
3
2 100 7 5 3 2 10 7 5 3 2 1.0
Ciss Coss Crss
10 7 5 3 2 1.0 0.1
2
3
5
7
1.0
2
3
5 IT01605 10 7 5 3 2
0
5
10
15
20
25
30 IT01606
Drain Current, ID A
10 9
Drain-to-Source Voltage, VDS V
VGS -- Qg
VDS=10V ID=1.4A
Drain Current, ID A
ASO
IDP=5.6A
1m
10µs
s
Gate-to-Source Voltage, VGS V
8 7 6 5 4 3 2 1 0 0 1.0 2.0 3.0 4.0 5.0 6.0 IT01607
ID=1.4A
DC
10
m
1.0 7 5 3 2 0.1 7 5 3 2
10
op
s
0m
s
n
era
tio
Operation in this area is limited by RDS(on).
Ta=25°C Single pulse
0.01 Mounted on a ceramic 23 5 7 1.0 0.1
board (900mm2×0.8mm)
2 3 5 7 10 2 3 5 7 100 IT01608
Total Gate Charge, Qg nC
1.2
Drain-to-Source Voltage, VDS V
PD -- Ta
Allowable Power Dissipation, PD W
1.0
M
ou
nt
0.8
ed
on
ac
er
0.6
am
ic
bo
ar
d
(9
0.4
00
m
m2 ×0
.8
0.2
m
m
)
140 160
0 0 20 40 60 80 100 120
Ambient Temperature, Ta °C
IT01609
No.6443-3/4
Others parts begin by mc
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