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Part: MCH3402
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
Description:
Company: Sanyo Semiconductor Corporation
Datasheet: Download MCH3402 datasheet File size : 43 kB
Request For quote: Find where to buy MCH3402
Datasheet text preview:
Ordering number:ENN6444
N-Channel Silicon MOSFET
MCH3402
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance. · Ultrahigh-speed swithcing. · 4V drive.
Package Dimensions
unit:mm 2167
[MCH3402]
0.25
0.3 3
0.15
1.6
1 0.65 2.0
2
0.25 0.85
2.1
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10µs, duty cycle1% Mounted on a ceramic board (900mm2×0.8mm) Conditions
1 : Gate 2 : Source 3 : Drain SANYO : MCPH3
0.15
Ratings 30 ±20 1.4 5.6 1 150 55 to +150
Unit V V A A W °C °C
Electrical Characteristics at Ta = 25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=700mA ID=700mA, VGS=10V ID=400mA, VGS=4V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz 1.0 1.1 1.6 220 340 90 50 22 280 480 Conditions Ratings min 30 10 ±10 2.4 typ max Unit V µA µA V S m m pF pF pF
Marking : KB
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle a p p l i c a t i o n s that require extremely high levels of reliability, s u c h as life-support systems, a i r c r a f t ' s c o n t r o l systems, o r other applications whose failure can be reasonably expected to result in serious p h y s i c a l and/or material damage. Consult with your SANYO representative nearest you before using a n y SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other p a r a m e t e r s ) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
30300TS (KOTO) TA-2456 No.6444-1/4
MCH3402
Continued from preceding page.
Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=10V, VGS=10V, ID=1.4A VDS=10V, VGS=10V, ID=1.4A VDS=10V, VGS=10V, ID=1.4A IS=1.4A, VGS=0 Ratings min typ 10 13 29 15 5 1 1 0.9 1.2 max Unit ns ns ns ns nC nC nC V
Switching Time Test Circuit
VDD=15V 10V 0V VIN ID=700mA RL=21.4 VOUT
VIN PW=10µs D.C.1%
D
G
P.G
50
S
MCH3402
1.4
ID -- VDS
V
V
0V 4.
3.0
ID -- VGS
VDS=10V
3.5
8.0
Drain Current, ID A
1.0
Drain Current, ID A
3.0V
0.8
2.0
1.5
0.6
1.0
0.4
0
0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Drain-to-Source Voltage, VDS V
800 700 600 500
IT01610
Gate-to-Source Voltage, VGS V
600
25°
0.2
C
VGS=2.5V
0.5
Ta= --25 °C 75° C
IT01611
1.2
6.0
V
2.5
10.
0V
RDS(on) -- VGS
Ta=25°C
RDS(on) -- Ta
Static Drain-to-Source On-State Resistance, RDS (on) m
Static Drain-to-Source On-State Resistance, RDS (on) m
500
400
0.7A
400 300 200 100 0 0 2 4 6 8 10 12 14 16 18 20
0.4A I D=
=4V , VGS
300
ID=0.4A
I D=
200
, VG 0.7A
10V S=
100
0 --60
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS V
IT01612
Ambient Temperature, Ta °C
IT01613
No.6444-2/4
MCH3402
10
yfs -- ID
VDS=10V
Forward Transfer Admittance, | yfs | S
7 5 3 2
10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01
IF -- VSD
VGS = 0
1.0 7 5 3 2 0.1 0.01
Ta
7
5°C
C 25°
2
3
5
7 0.1
2
3
5 7 1.0
2
3
Drain Current, ID A
100 7
7 10 IT01614 1000 7 5 3
5
0
0.2
0.4
0.6
Ta= 75 25°C °C --25° C
0.8 1.0
°C 25 =--
Forward Current, IF A
1.2
1.4 IT01615
Diode Forward Voltage, VSD V
SW Time -- ID
VDD=15V VGS=10V td(off)
tr
Ciss, Coss, Crss -- VDS
f=1MHz
Switching Time, SW Time ns
5
Ciss, Coss, Crss pF
3 2
2 100 7 5 3 2 10 7 5 3 2 1.0
Ciss Coss Crss
tf td(on)
10 7 5 3 2 1.0 0.1
2
3
5
7
Drain Current, ID A
1.0
2
3 IT01616 10 7 5 3 2
0
5
10
15
20
25
30 IT01617
Drain-to-Source Voltage, VDS V
10 9
VGS -- Qg
VDS=10V ID=1.4A
Drain Current, ID A
ASO
IDP=5.6A
10µs
1m s
Gate-to-Source Voltage, VGS V
8 7 6 5 4 3 2 1 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
ID=1.4A
DC
1.0 7 5 3 2 0.1 7 5 3 2
10
m
10
op era
s
0m
s
tio
Operation in this area is limited by RDS(on). Ta=25°C Single pulse
2 3
n
Total Gate Charge, Qg nC
1.2
0.01 0.1
Mounted on a ceramic board (900mm2×0.8mm)
5 7 1.0 2 3 5 7 10 2 3
IT01618
Drain-to-Source Voltage, VDS V
5 7 100 IT01619
PD -- Ta
Allowable Power Dissipation, PD W
1.0
M
ou
nt
0.8
ed
on
ac
er
am
0.6
ic
bo
ar
d
(9
0.4
00
m
m2 ×0
.8
0.2
m
m
)
0 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta °C
IT01620
No.6444-3/4
Others parts begin by mc
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