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Part: MCH3405
Category:
Description: Ultrahigh-speed Switching , Package : MCPH3
Company: Sanyo Semiconductor Corporation
Datasheet: Download MCH3405 datasheet File size : 43 kB
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Datasheet text preview:
Ordering number : ENN6940
MCH3405
N-Channel Silicon MOSFET
MCH3405
Ultrahigh-Speed Switching Applications
Features
· · ·
Package Dimensions
unit : mm 2167
[MCH3405]
0.25
Low ON-resistance. Ultrahigh-speed switching. 1.8V drive.
0.3
0.15
3
1.6 2.1
1
0.65 2.0
2
0.25
1 : Gate 2 : Source 3 : Drain
0.85
SANYO : MCPH3
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10µs, duty cycle1% Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings 20 ± 10 1.8 7.2 0.8 150 --55 to +125 Unit V V A A W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Gate-to-Source Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS I GSS VGS(off) yfs Conditions ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=± 8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1A Ratings min 20 1 ± 10 0.4 1.9 2.8 1.3 typ max Unit V µA µA V S
Marking : KE
0.15
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle a p p l i c a t i o n s that require extremely high levels of reliability, such as life-support systems, aircraft's c o n t r o l systems, or other applications whose failure can be reasonably expected to result in serious p h y s i c a l and/or material damage. Consult with your SANYO representative nearest you before using a n y SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other p a r a m e t e r s ) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
33001 TS IM TA-3096 No.6940-1/4
MCH3405
Continued from preceding page.
Parameter Symbol RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=1A, VGS=4V ID=0.5A, VGS=2.5V ID=0.1A, VGS=1.8V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=10V, VGS=10V, ID=1.8A VDS=10V, VGS=10V, ID=1.8A VDS=10V, VGS=10V, ID=1.8A IS=1.8A, VGS=0 Ratings min typ 160 200 280 100 22 15 5.5 18 17 8 4.5 0.4 0.4 0.91 1.2 max 210 280 390 Unit m m m pF pF pF ns ns ns ns nC nC nC V
Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage
Switching Time Test Circuit
VIN 4V 0V VIN PW=10µs D.C.1% VDD=10V ID=1A RL=10
D
VOUT
G
P.G
50
MCH3405
S
2.0
ID -- VDS
4.0V
2.5 V
2.0 1.8 1.6
ID -- VGS
VDS=10V
3.0V
1.6
6.0V
Drain Current, ID -- A
1
.5V
Drain Current, ID -- A
1.4 1.2 1.0 0.8 0.6 0.4 0.2
1.2
0.8
10.0V
0.4
VGS=1.0V
0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Drain-to-Source Voltage, VDS -- V
400
IT02983
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
400
25
°C
Ta= 75° C --25 °C
IT02984
RDS(on) -- Ta
Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- m
Static Drain-to-Source On-State Resistance, RDS(on) -- m
350 300 250 200 150 100 50 0 0 2 4 6 8 10 IT02985
350 300 250 200 150 100 50 0 --60
1.0A ID=0.5A
4.0V S= V I D= =2.5 A, VGS =0.5 ID , VG 1.0A
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
Ambient Temperature, Ta -- °C
IT02986
No.6940-2/4
MCH3405
Forward Transfer Admittance, yfs -- S
10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0.001 2 3 5 70.01 23 5 7 0.1 23 5 7 1.0 23 5 7 10 IT02987
yfs -- ID
VDS=10V
° 25 C
10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0.2 0.3 0.4 0.5
IF -- VSD
VGS=0
0.6
Ta= 75° C 25° --25 C °C
0.7 0.8 0.9
C 5° --2 °C = 75 Ta
Forward Current, IF -- A
1.0
1.1
1.2
Drain Current, ID -- A
100 7
SW Time -- ID
VDD=10V VGS=4V
1000 7 5
Ciss, Coss, Crss -- VDS
f=1MHz
Diode Forward Voltage, VSD -- V
IT02988
Switching Time, SW Time -- ns
5 3 2
td(off)
Ciss, Coss, Crss -- pF
3 2
tr
10 7 5 3 2
tf
td(on)
100 7 5 3 2
Ciss
Coss
Crss
0 2 4 6 8 10 12 14 16 18 20
1.0 0.1
10 2 3 5 7 1.0 2 3 5 IT02989 10 7 5 3 2
Drain Current, ID -- A
10 9
Drain-to-Source Voltage, VDS -- V
IT02990
VGS -- Qg
ASO
Gate-to-Source Voltage, VGS -- V
VDS=10V ID=1.8A
IDP=7.2A
<10µs
1m
8
ID=1.8A
s
Drain Current, ID -- A
10
7 6 5 4 3 2 1 0 0 1 2 3 4 5 IT02991
m
1.0 7 5 3 2 0.1 7 5 3 2
s
100µs
10 0m s
DC
Operation in this area is limited by RDS(on).
0.01 0.01
Ta=25°C Single pulse Mounted on a ceramic board (900mm2!0.8mm)
23 5 7 0.1 23 5 7 1.0 23 5 7 10 23
Total Gate Charge, Qg -- nC
1.0
Drain-to-Source Voltage, VDS -- V
er op on ati
5 7 100 IT02992
PD -- Ta
M
Allowable Power Dissipation, PD -- W
0.8
ou
nt
ed
on
0.6
ac
er
am
ic
bo
ar
0.4
d(
90
0m
m2 !0
0.2
.8m
m
)
0 0 20 40 60 80 100 120 140 160
Amibient Tamperature, Ta -- °C
IT02993
No.6940-3/4
Others parts begin by mc
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