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Details, datasheet, quote on part number:MCH3406
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Datasheet text preview:
Ordering number : ENN7010
MCH3406
N-Channel Silicon MOSFET
MCH3406
Ultrahigh-Speed Switching Applications
Features
· · ·
Package Dimensions
unit : mm 2167A
[MCH3406]
0.25
0.3 0.15
Low ON-state resistance. Ultrahigh-speed switching. 1.8V drive.
3
2.1 1.6
0.25
0.65 2.0
0.07
2
1
3
0.85
1 : Gate 2 : Source 3 : Drain
2
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10µs, duty cycle1% Mounted on a ceramic board (900mm2!0.8mm) Conditions
1
SANYO : MCPH3
Ratings 20 ± 10 3 12 1 150 --55 to +150
Unit V V A A W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS I GSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Conditions ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=± 8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1.5A ID=1.5A, VGS=4V ID=1A, VGS=2.5V ID=0.5A, VGS=1.8V Ratings min 20 1 ± 10 0.4 3.9 5.6 48 58 72 63 82 110 1.3 typ max Unit V µA µA V S m m m
Marking : KF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle a p p l i c a t i o n s that require extremely high levels of reliability, such as life-support systems, aircraft's c o n t r o l systems, or other applications whose failure can be reasonably expected to result in serious p h y s i c a l and/or material damage. Consult with your SANYO representative nearest you before using a n y SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other p a r a m e t e r s ) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71801 TS IM TA-3097 No.7010-1/4
MCH3406
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=10V, VGS=4V, ID=3A VDS=10V, VGS=4V, ID=3A VDS=10V, VGS=4V, ID=3A IS=3A, VGS=0 Ratings min typ 280 60 38 13 35 35 25 8.8 0.85 0.85 0.82 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V
Switching Time Test Circuit
VIN 4V 0V VIN PW=10µs D.C.1% ID=1.5A RL=6.67 VDD=10V
D
VOUT
G
MCH3406 P.G 50
S
3.0
ID -- VDS
10.0V 4.0V 2.5 V
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5
ID -- VGS
VDS=10V
1.8V
2.5
Drain Current, ID -- A
1.5
V
2.0
1.5
VGS=1.0V
Drain Current, ID -- A
0.5
Ta= 7
0 0.2 0.4 0.6 0.8
5°C
1.0
0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0 1.0 1.2 1.4 1.6
Drain-to-Source Voltage, VDS -- V
160
IT03490
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
140
25
°C --25°C
IT03491
RDS(on) -- Ta
Ta=25°C
Static Drain-to-Source On-State Resistance, RDS(on) -- m
Static Drain-to-Source On-State Resistance, RDS(on) -- m
140 120 100 80 60 40 20 0 0 2 4 6 8 10 IT03492
120
100
1.0A 1.5A ID=0.5A
80
60
V =1.8 VGS 5A, 0. V I D= =2.5 VGS .0A, 4.0V I D=1 S= .5A, V G I D=1
40
20 0 --60
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
Ambient Temperature, Ta -- °C
IT03493
No.7010-2/4
MCH3406
3
yfs -- ID
VDS=10V
Forward Transfer Admittance, yfs -- S
2 10 7 5 3 2 1.0 7 5 3 2
10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2
IF -- VSD
VGS=0
C 25°
Ta
°C -25 =-
C 75°
Forward Current, IF -- A
0.1 0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Drain Current, ID -- A
3 2
5 7 10 IT03494
0.01 0.2
0.3
0.4
0.5
Ta= 7
5°C 25° C --25 °C
0.6 0.7 0.8
0.9
1.0
1.1
1.2
SW Time -- ID
VDD=10V VGS=4V Ciss, Coss, Crss -- pF
1000 7 5 3 2
Ciss, Coss, Crss -- VDS
f=1MHz
Diode Forward Voltage, VSD -- V
IT03495
Switching Time, SW Time -- ns
100 7 5 3 2 10 7 5 3 2 1.0 0.1 2
td(off)
tr
Ciss
tf
td(on)
100 7 5 3
Coss
Crss
10 2 3 5 7 1.0 2 3 5
Drain Current, ID -- A
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 1 2 3 4 5 6 7 8
10 IT03496 3 2 10 7 5
7
0
2
4
6
8
10
12
14
16
18
20
VGS -- Qg
Drain-to-Source Voltage, VDS -- V
IT03497
ASO
Gate-to-Source Voltage, VGS -- V
VDS=10V ID=3A Drain Current, ID -- A
IDP=12A ID=3A
<10µs
1m
10 m
s
100µs
3 2 1.0 7 5 3 2 0.1 7 5 3 2
DC
10
s
op
0m
er
s
ati
on
Operation in this area is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board(900mm2!0.8mm)
23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 57
9
10
0.01 0.01
Total Gate Charge, Qg -- nC
1.2
IT03498
PD -- Ta
M
Drain-to-Source Voltage, VDS -- V
IT03499
Allowable Power Dissipation, PD -- W
1.0
ou
nt
ed
0.8
on
ac
er
am
0.6
ic
bo
ar
d(
90
0.4
0m
m2 !
0.
8m
0.2
m
)
0 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT03500
No.7010-3/4
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