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Details, datasheet, quote on part number:MCH3408
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Datasheet text preview:
Ordering number : ENN7011
MCH3408
N-Channel Silicon MOSFET
MCH3408
Ultrahigh-Speed Switching Applications
Features
· · ·
Package Dimensions
unit : mm 2167A
[MCH3408]
0.25
Low ON-resistance. Ultrahigh-speed switching. 4V drive.
0.3
0.15
3
2.1 1.6
0.25
0.65 2.0
0.07
2
1
3
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10µs, duty cycle1% Mounted on a ceramic board (900mm2!0.8mm) Conditions
0.85
1 : Gate 2 : Source 3 : Drain
2
1
SANYO : MCPH3
Ratings 30 ± 20 1.4 5.6 0.8 150 --55 to +150
Unit V V A A W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS I GSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=± 16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=700mA ID=700mA, VGS=10V ID=400mA, VGS=4V Ratings min 30 1 ± 10 1.2 0.77 1.1 230 400 300 560 2.6 typ max Unit V µA µA V S m m
Marking : KH
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle a p p l i c a t i o n s that require extremely high levels of reliability, such as life-support systems, aircraft's c o n t r o l systems, or other applications whose failure can be reasonably expected to result in serious p h y s i c a l and/or material damage. Consult with your SANYO representative nearest you before using a n y SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other p a r a m e t e r s ) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71801 TS IM TA-3227 No.7011-1/4
MCH3408
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=10V, VGS=10V, ID=1.4A VDS=10V, VGS=10V, ID=1.4A VDS=10V, VGS=10V, ID=1.4A IS=1.4A, VGS=0 Ratings min typ 65 14 8 5 4 11 3 2.5 0.6 0.3 0.87 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V
Switching Time Test Circuit
VIN 10V 0V VIN PW=10µs D.C.1% ID=700mA RL=21.4 VDD=15V
D
VOUT
G
MCH3408 P.G 50
S
6V 5V
10
VDS=10V
4V
Drain Current, ID -- A
1.2
Drain Current, ID -- A
1.5
1.0
0.8
1.0
VGS=3V
0.5
0.6
75 °C
0.2 0 0 0.2 0.4 0.6 0.8 1.0 IT03294 0 0 0.5 1.0 1.5 2.0
Ta =
2.5
25
3.0
°C
--25 °
3.5
C
0.4
Ta= --
25°C 75° 25° CC
4.0 IT03295 140 160 IT03297
2.0
ID -- VDS
8V
V
1.4
ID -- VGS
Drain-to-Source Voltage, VDS -- V
800
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
800
RDS(on) -- Ta
Ta=25°C
Static Drain-to-Source On-State Resistance, RDS(on) -- m
Static Drain-to-Source On-State Resistance, RDS(on) -- m
700 600 500 400 300 200 100 0 2 3 4 5 6 7 8 9 10 IT03296
700 600 500 400 300 200 100 0 --60
ID=0.4A
0.7A
0.4 I D=
A, VG
4V S=
.7A, I D=0
=10V VGS
--40
--20
0
20
40
60
80
100
120
Gate-to-Source Voltage, VGS -- V
Ambient Temperature, Ta -- °C
No.7011-2/4
MCH3408
3
yfs -- ID
VDS=10V
5 3 2
IF -- VSD
VGS=0
Forward Transfer Admittance, yfs -- S
2
Forward Current, IF -- A
1.0 7 5
25
°C
1.0 7 5 3 2 0.1 7 5 3 2
= Ta
75
°C
5°C --2
3 2
0.1 0.01
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 IT03299
Drain Current, ID -- A
5 3
IT03298 100 7 5
SW Time -- ID
Ciss, Coss, Crss -- VDS
f=1MHz
Diode Forward Voltage, VSD -- V
VDD=15V VGS=10V
Switching Time, SW Time -- ns
2
Ciss, Coss, Crss -- pF
td(off)
10 7 5 3 2
3 2
td(on)
tr
tf
10
7 5 3
1.0 5 7 0.1 2 3 5 7 1.0 2 3
0
5
10
Ta=75 °C 25°C --25°C
Ciss
Coss
Crss
15
20
25
30 IT03301
Drain Current, ID -- A
10
IT03300 10 7 5 3 2
VGS -- Qg
Drain-to-Source Voltage, VDS -- V
ASO
Gate-to-Source Voltage, VGS -- V
VDS=10V ID=1.4A
8
IDP=5.6A
<10µs
1m
ID=1.4A
10
10
s
0µ
s
Drain Current, ID -- A
6
1.0 7 5 3 2 0.1 7 5 3 2
10
DC op
ms
0m
s
n
era
tio
4
Operation in this area is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board(900mm2!0.8mm)
2 3 5 7 1.0 2 3 5 7 10 2 3 5
2
0 0 0.5 1.0 1.5 2.0 2.5 IT03302
0.01 0.1
Total Gate Charge, Qg -- nC
1.0
PD -- Ta
Drain-to-Source Voltage, VDS -- V
IT03303
Allowable Power Dissipation, PD -- W
0.8
M
ou
nt
ed
on
0.6
ac
er
am
ic
bo
ar
0.4
d(
90
0m
m2 !0
0.2
.8m
m
)
0 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT03304
No.7011-3/4
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