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Details, datasheet, quote on part number:MCH3411
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Datasheet text preview:
Ordering number : ENN7285
MCH3411
N-Channel Silicon MOSFET
MCH3411
Ultrahigh-Speed Switching Applications
Preliminary Features
· · ·
Package Dimensions
unit : mm 2167A
[MCH3411]
0.25
Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.
0.3 3
0.15
2.1
1.6
0.25
0.65 2.0
(Bottom view)
0.07
2
1
3
1 : Gate 2 : Source 3 : Drain
1 2
(Top view)
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10µs, duty cycle1% Mounted on a ceramic board (900mm2!0.8mm) Conditions
0.85
SANYO : MCPH3
Ratings 30 ±10 3 12 1 150 --55 to +150
Unit V V A A W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS I GSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=±8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1.5A ID=1.5A, VGS=4V ID=1A, VGS=2.5V Ratings min 30 1 ±10 0.4 3.5 5.0 69 84 90 118 1.3 typ max Unit V µA µA V S m m
Marking : KL
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle a p p l i c a t i o n s that require extremely high levels of reliability, such as life-support systems, aircraft's c o n t r o l systems, or other applications whose failure can be reasonably expected to result in serious p h y s i c a l and/or material damage. Consult with your SANYO representative nearest you before using a n y SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other p a r a m e t e r s ) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
83002 TS IM TA-100052 No.7285-1/4
MCH3411
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=4V, ID=3A VDS=10V, VGS=4V, ID=3A VDS=10V, VGS=4V, ID=3A IS=3A, VGS=0 Ratings min typ 270 38 23 10 30 42 52 3.7 0.7 0.5 0.86 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V
Switching Time Test Circuit
VIN 4V 0V VIN PW=10µs D.C.1% ID=1.5A RL=10 VDD=15V
D
VOUT
G
MCH3411 P.G 50
S
25°C
3.0
ID -- VDS
4 4.5V .0V
2.5V 2.0V
5
ID -- VGS
25°C 75°C
1.5
V
VDS=10V
2.5
4
Drain Current, ID -- A
2.0
Drain Current, ID -- A
10.0V
3
1.5
VGS=1.0V
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.25 0.50 0.75 1.00
0 0
1.25
25°C
1.50 1.75
0.5
1
Ta= 7
1.0
5°C --25° C
2
Ta= --
2.00
2.25
2.50
Drain-to-Source Voltage, VDS -- V
300
IT04632
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
150
IT04633
Ta=25°C
Static Drain-to-Source On-State Resistance, RDS(on) -- m
RDS(on) -- Ta
Static Drain-to-Source On-State Resistance, RDS(on) -- m
250
125
200
100
150
75
1.5A
100
V =2.5 , VGS 1.0A V I D= =4.0 , VGS 1.5A I D=
ID=1.0A
50
50
25
0 0 2 4 6 8 10 12 IT04634
0 --60
--40
--20
0
20
40
60
80
100
120
140
Gate-to-Source Voltage, VGS -- V
Ambient Temperature, Ta -- °C
IT04635
No.7285-2/4
MCH3411
Forward Transfer Admittance, yfs -- S
10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 70.001 2 3 5 70.01 23 5 7 0.1 23 5 7 1.0 23 5
yfs -- ID
VDS=10V
25 °C
10 7 5 3 2
IF -- VSD
VGS=0
= Ta
--2
C 5° °C 75
Forward Current, IF -- A
1.0 7 5 3 2
0.01 7 5 3 2 0 0.2 0.4 0.6 0.8 1.0 1.2 IT04637
0.001
Drain Current, ID -- A
100 7
IT04636 1000 7
SW Time -- ID
td(off)
Ciss, Coss, Crss -- VDS
f=1MHz
Diode Forward Voltage, VSD -- V
VDD=15V VGS=4V
Switching Time, SW Time -- ns
5 3 2
5
tf
Ciss, Coss, Crss -- pF
3 2
100 7 5
tr
10 7 5 3 2 7 0.1 2 3 5 7
td(on)
3 2
10 1.0 2 3 5 0 5 10 15 20 25 30 IT04639
Drain Current, ID -- A
5
IT04638 3 2 10 7 5
VGS -- Qg
Drain-to-Source Voltage, VDS -- V
Gate-to-Source Voltage, VGS -- V
VDS=10V ID=3A
5° 25° C --25 C °C
0.1 7 5 3 2
Ta= 7
Ciss
Coss
Crss
ASO
IDP=12A ID=3A
4
Drain Current, ID -- A
<10µs 10 0µ s 1m s
3 2 1.0 7 5 3 2 0.1 7 5 3 2
10
3
DC
10
op
ms
0m
era
s
n
2
Operation in this area is limited by RDS(on).
tio
1
0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0.01 0.1
Ta=25°C Single pulse Mounted on a ceramic board(900mm2!0.8mm)
2 3 5 7 1.0 2 3 5 7 10 2 3 5
Total Gate Charge, Qg -- nC
1.2
IT04640
PD -- Ta
Drain-to-Source Voltage, VDS -- V
IT04641
Allowable Power Dissipation, PD -- W
1.0
M
ou
nt
0.8
ed
on
ac
er
am
0.6
ic
bo
ar
d(
90
0.4
0m
m2 !
0.8
0.2
m
m
)
0 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT04642
No.7285-3/4
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