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Details, datasheet, quote on part number:MCH3412
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Datasheet text preview:
Ordering number : ENN6901
MCH3412
N-Channel Silicon MOSFET
MCH3412
Ultrahigh-Speed Switching Applications
Features
· · ·
Package Dimensions
unit : mm 2167
[MCH3412]
0.25
0.3 0.15
Low ON-resinstance. Ultrahigh-speed switching. 4V drive.
3
1.6 2.1
1
0.65 2.0
2
0.25
1 : Gate 2 : Source 3 : Drain SANYO : MCPH3
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10µs, duty cycle1% Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings 30 ± 20 3 12 1 150 --55 to +125 Unit V V A A W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS I GSS VGS(off) yfs Conditions ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=± 16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1.5A Ratings min 30 1 ± 10 1.2 2.1 3 2.6 typ max Unit V µA µA V S
Marking : KM
0.15
0.85
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle a p p l i c a t i o n s that require extremely high levels of reliability, such as life-support systems, aircraft's c o n t r o l systems, or other applications whose failure can be reasonably expected to result in serious p h y s i c a l and/or material damage. Consult with your SANYO representative nearest you before using a n y SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other p a r a m e t e r s ) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
13001 TS IM TA-3099 No.6901-1/4
MCH3412
Continued from preceding page.
Parameter Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=1.5A, VGS=10V ID=1A, VGS=-4V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=10V, VGS=10V, ID=3A VDS=10V, VGS=10V, ID=3A VDS=10V, VGS=10V, ID=3A IS=3A, VGS=0 Ratings min typ 64 105 180 42 25 7 2.8 18.5 4.4 4.9 0.93 0.63 0.85 1.2 max 84 150 Unit m m pF pF pF ns ns ns ns nC nC nC V
Switching Time Test Circuit
VDD=15V VIN 10V 0V VIN PW=10µs D.C.1% ID=1.5A RL=10
D
VOUT
G
P.G
50
MCH3412
S
4.0
ID -- VDS
5.0V
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0
ID -- VGS
VDS=10V
3.6 3.2
Drain Current, ID -- A
6.0V
4.0
V
8.0V
2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 0
0 3.
V
Ta=7 5°
0 0.5 1.0 1.5 2.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
2.5
25
3.0
°C
--25°C
VGS=2.5V
Drain Current, ID -- A
10.0
V
C
3.5
4.0
4.5
Drain-to-Source Voltage, VDS -- V
250
IT02942
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
250
IT02943
RDS(on) -- Ta
Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- m
Static Drain-to-Source On-State Resistance, RDS(on) -- m
200
200
150
1.0A ID=1.5A
150
100
100
, 1.0A I D=
=4V VGS
=10V A, V GS I D=1.5
50
50
0 0 2 4 6 8 10 12 14 16 18 20
0 --60
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
IT02944
Ambient Temperature, Ta -- °C
IT02945
No.6901-2/4
MCH3412
10
yfs -- ID
VDS=10V
Forward Transfer Admittance, yfs -- S
7 5 3 2
10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2
IF -- VSD
VGS=0
25°
C
1.0 7 5 3 2
= Ta
--2
C 5°
75°
C
Forward Current, IF -- A
Ta=7 5°C 25°C
0.3 0.4 0.5 0.6
0.1 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
0.01 0.2
--25° C
0.7 0.8
0.9
1.0
1.1
1.2
Drain Current, ID -- A
100 7
IT02946 1000 7 5
Diode Forward Voltage, VSD -- V
IT02947
SW Time -- ID
VDD=15V VGS=10V Ciss, Coss, Crss -- pF
Ciss, Coss, Crss -- VDS
f=1MHz
Switching Time, SW Time -- ns
5 3 2
3 2
td(off)
Ciss
10 7 5 3 2
td(on) tf
100 7 5
Coss
3 2 10
tr
Crss
1.0 0.1
2
3
5
7
1.0
2
3
5
Drain Current, ID -- A
10 9
10 IT02948 3 2 10 7 5
7
0
5
10
15
20
25
30 IT02949
Drain-to-Source Voltage, VDS -- V
VGS -- Qg
VDS=10V ID=3A Drain Current, ID -- A
ASO
IDP=12A ID=3A
10 m
<10µs
1m s
Gate-to-Source Voltage, VGS -- V
8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 IT02950
3 2 1.0 7 5 3 2 0.1 7 5 3 2
100µs
DC 100 op ms er ati on
Operation in this area is limited by RDS(on).
s
0.01 0.01
Ta=25°C Single pulse Mounted on a ceramic board(900mm2!0.8mm)
23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 5
Total Gate Charge, Qg -- nC
1.2
PD -- Ta
Drain-to-Source Voltage, VDS -- V
IT02951
Allowable Power Dissipation, PD -- W
1.0
M
ou
nt
0.8
ed
on
ac
er
0.6
am
ic
bo
ar
d(
0.4
90
0m
m2 !
0.8
0.2
m
m
)
0 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT02952
No.6901-3/4
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