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Part: SPI-336-99-T1
Category:
Description: Photoreflector Diodes , Package :
Company: Sanyo Semiconductor Corporation
Datasheet: Download SPI-336-99-T1 datasheet File size : 417 kB
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Datasheet text preview:
Ordering number : EN6030
SPI-336-99-T1
Infrared LED
SPI-336-99-T1
Ultraminiature photoreflector supporting reflow soldering (Single transistor type)
Features
· Infrared LED plus Phototransistor (single) · DIP type · Compact type : 3.4 (L) ! 2.7 (W) ! 1.5 (H) mm · Visible light cut type · Taping type
Absolute Maximum Ratings at Ta=25°C, 65%RH (as per JIS C7032)
Parameter Forward Current Reverse Voltage Power Dissipation Collector-Emitter Voltage Emitter-Collector Voltage Collector Curren Power Dissipation Operating Temperature Storage Temperature Symbol IF VR PD VCEO VECO IC PC Topr Tstg Rating 50 5 70 20 5 20 70 - 20 to +80 - 30 to +100 Unit mA V mW V V mA mW °C °C
Input LED
Output Phototransistor
Electro-Optical Characteristics at Ta=25°C, 65%RH
Parameter Symbol Forward Voltage VF Input Reverse Current IR Output Dark Current I CEO Collector Output IC Leakage Current I LEAK Collector Emitter VCE(sat) Coupled Rise Time tr Fall Time tf *1 Location of reflector is shown in Fig. 1. Condition IF=10mA VR=5V IF=0mA, VCE=10V IF=10mA,VCE=5V *1 IF=10mA,VCE=5V *2 IF=10mA, IC=50µA VCC=5V, RL=100 IC=1mA Min. 1.0 80 Typ. 1.2 5 5 Max. 1.6 10 200 1100 1 0.5 --Unit V µA nA µA µA V µs µs
AL V.E. film Glass plate (t=1mm)
*2 *3
No reflector Table of Classification of Collector Output Class Ic (µA) A 1100 to 450 B 600 to 260 C 350 to 150 D 200 to 80
Fig. 1
Location of Reflector
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72199 GI, (MI) No.6030 1/6
SPI-336-99-T1
Typical Characteristics
CAUTION These numerical value show the electrical and optical characteristics of this product, and not assure this contents.
Forward Current vs. Ambient Temperature
60
Power Dissipation vs. Ambient Temperature
120
(Rating)
Power Dissipation P (mW)
(Rating)
50
100
Forward Current IF (mA)
40
80
30
60
20
40
10
20
0 --25 0 25 50 75 100
0 --25 0 25 50 75 100
Ambient Temperature Ta (°C)
Ambient Temperature Ta (°C)
Forward Current vs. Forward Voltage
500 500
Collector vs. Forward Current
VCE=5V Ta=25°C Collector Current IC (µA)
400
Forward Current IF (mA)
100 50
Ta=75°C 50°C 25°C 0°C --25°C
300
10 5
200
100
1 0 0.5 1 1.5 2
0 0 4 8 12 16 20
Forward Voltage VF (V)
Forward Current IF (mA)
Collector Current vs. Collector-emitter Voltage
1000
Relative Collector Current vs. Ambient Temperature
140
Ta=25°C Collector Current IC (µA)
800
Relative Collector Current (%)
IF=10mA VCE=5V
120
600
IF=20mA 15mA
100
400
80
10mA
200
60
5mA
0 0 5 10 40 --25
0
25
50
75
100
Collector-emitter Voltage VCE (V)
Ambient Temperature Ta (°C)
No.6030 2/6
SPI-336-99-T1
Typical Characteristics
CAUTION These numerical value show the electrical and optical characteristics of this product, and not assure this contents.
Collector-emitter Saturation Voltage VCE (sat) (V)
Collector-emitter Saturation Voltage vs. Ambient Temperature
0.24
Collector Dark Current vs. Ambient Temperature
10-6 5
0.22
Collector Dark Current ICEO (A)
IF=10mA IC=50µA
VCE=10V
10-7 5
0.20
10-8 5
0.18
10-9 5
0.16
0.14 --25
0
25
50
75
100
10-10
--25
0
25
50
75
100
Ambient Temperature Ta (°C)
Ambient Temperature Ta (°C)
Response Time vs. Load Resistance
1000 500
Test Circuit for Response Time
IFP=20mA VCC=5V Ta=25°C
tf
IFP VCC IFP Vout RD RL 90% Vout 10% tr tf
Response (µS)
100 50
tr
10 5
1 0.1
0.5
1
5
10
50
100
Load Resistance RL (k)
Relative Collector Current vs. Distance
120 120
Relative Collector Current vs. PPC paper Moving Distance
2 IF=10mA,VCE=5V Ta=25°C,d=1mm 0
Relative Collector Current (%)
80
Relative Collector Current (%)
100
IF=10mA VCE=5V Ta=25°C
100
80
d
1 1 0 +
+
60
60
40
40
20
20
0 0 1 2 3 4 5
0 --4
--2
0
2
4
2
6
Distance between sensor and Al evaporation d (mm)
PPC paper Moving Distance (mm)
No.6030 3/6
Others parts begin by sp
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