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Details, datasheet, quote on part number:2C3960
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| Part: | 2C3960 |
| Category: | Discrete => Transistors => Bipolar => Audio Amplifier Application => NPN |
| Description: | Chip Type 2c3960 Geometry 0003 Polarity NPN |
| Company: | Semicoa Semiconductors |
| Datasheet: | Download 2C3960 datasheet File size : 31 kB |
| Request For quote: | Find where to buy 2C3960
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Datasheet text preview:
Data Sheet No. 2C3960
Chip Type 2C3960 Geometry 0003 Polarity NPN
Generic Packaged Part:
2N3960
Chip type 2C3960 by Semicoa Semiconductors provides performance similar to these devices.
Part Numbers:
Product Summary: APPLICATIONS: Designed for high-speed current-mode logic switching. Features:
2N3960, 2N3960UB, SD3960F, SQ3960, SQ3960F
Mechanical Specifications
Metallization Bonding Pad Size Die Thickness Chip Area Top Surface Top Backside Emitter Base Al - 15 kÅ min. Au - 6.5 kÅ nom. 2.7 mils x 2.7 mils 2.7 mils x 2.7 mils 8 mils nominal 16 mils x 16 mils Silox Passivated
Electrical Characteristics
Parameter TA = 25oC Test conditions Min Max Unit
BVCEO IC = 10.0 mA 12 --V dc BVCBO IC = 10 µA 20 --V dc BVEBO IE = 10.0 mA 4.5 --V dc ICEX VCE = 10 V, VEB = 2.0 V --5.0 nA hFE1 IC = 1.0 mA dc, VCE = 1.0 V 25 ----hFE2 IC = 10 mA dc, VCE = 1.0 V 40 400 --hFE3 IC = 30 mA dc, VCE = 1.0 V 25 ----VCE(sat) IC = 30 mA dc, IB = 3.0 mA --0.3 V dc Due to limitations of probe testing, only dc parameters are tested. This must be done with pulse width less than 300 µs, duty cycle less than 2%.
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