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Details, datasheet, quote on part number: 2N3811LJS
 
 
Part number2N3811LJS
CategoryDiscrete => Transistors => Bipolar => General Purpose => PNP
DescriptionPackage = TO-77 ;; Level = Jans ;; Vceo (V) = 60 ;; Vcbo (V) = 60 ;; Vebo (V) = 5 ;; Ic (A) = 0.05 ;; (Power W) ta = 0.6 ;; Rtja ( C/W) = ;; Tstg/top ( C) = -65 to +200 ;; Hfe = 900 ;; VCE(sat) (V) = 0.20
CompanySemicoa Semiconductors
DatasheetDownload 2N3811LJS datasheet
 


 
Specifications, Features, Applications

Description Semicoa Semiconductors offers:ˇ Screening and processing per MIL-PRF-19500 Appendix Eˇ JAN level (2N3811LJ)ˇ JANTX level (2N3811LJX)ˇ JANTXV level (2N3811LJV)ˇ JANS level (2N3811LJS)ˇ QCI to the applicable levelˇ 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANSˇ Radiation testing (total dose) upon request

Applications
ˇ General purposeˇ Matched Dual transistorsˇ PNP silicon transistor
Features

ˇ Hermetically sealed TO-77 metal can Also available in chip configuration Chip geometry 0220 Reference document: MIL-PRF-19500/336

Please contact Semicoa for special configurations www.SEMICOA.com (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, = 25°C Derate linearly above 25°C Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO PT TJ TSTGˇ Qualification Levels: JAN, JANTX, JANTXV and JANSˇ Radiation testing available

333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page of 1

Off Characteristics Parameter Collector-Emitter Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current On Characteristics Parameter Symbol hFE6 hFE3-1/hFE3-2 Base-Emitter Voltage VBE VCEsat1 VCEsat2 Test Conditions = 1 ľA, VCE = 5 Volts = 10 ľA, VCE = 5 Volts = 100 ľA, VCE = 5 Volts = 1 mA, VCE = 5 Volts = 10 mA, VCE = 5 Volts = 100 ľA, VCE = 5 Volts = 100 ľA, VCE = 5 Volts VCE = 5 Volts, 100 ľA VCE = 5 Volts, 10 ľA VCE = 5 Volts, 100 ľA VCE = 5 Volts, = 100 ľA, = 1 mA, = 100 ľA, = 1 mA, 100 ľA Symbol V(BR)CEO IEBO1 IEBO2 Test Conditions 100 ľA VCB = 60 Volts VCB = 50 Volts VCB = 50 Volts, = 150°C VEB = 5 Volts VEB = 4 Volts Min Typ Max Units Volts ľA nA

Pulse Test: Pulse Width = 300 ľs, Duty Cycle 2.0%
Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page of 2

Data Sheet Dynamic Characteristics Parameter Magnitude ­ Common Emitter, Short Circuit Forward Current Transfer Ratio Small Signal Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Open Circuit Input Capacitance Symbol |hFE1| |hFE2| hFE COBO CIBO Test Conditions VCE = 5 Volts, = 500 ľA, = 30 MHz VCE = 5 Volts, = 1 mA, = 100 MHz VCE = 10 Volts, = 1 mA, = 1 kHz VCB = 5 Volts, = 0 mA, 100 kHZ MHz VEB = 0.5 Volts, = 0 mA, 100 kHZ MHz VCE = 10 Volts, = 100 ľA, = 1 kHz = 10 kHz VCE = 10 Volts, = 100 ľA, < 15.7 kHz VCB f =1kHz VCB f =1kHz VCB IC=100ľA, f=1kHz Min pF Typ Max Units

Noise Figure (wideband) Short Circuit Input Impedance Open Circuit Output Admittance Open Circuit reverse Voltage Transfer Ratio

333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page of 3



Related products with the same datasheet
2N3811LJ   2N3811LJV   2N3811LJX  


Some Part number from the same manufacture Semicoa Semiconductors
2N3811LJV Package = TO-77 ;; Level = Jans ;; Vceo (V) = 60 ;; Vcbo (V) = 60 ;; Vebo (V) = 5 ;; Ic (A) = 0.05 ;; (Power W) ta = 0.6 ;; Rtja ( C/W) = ;; Tstg/top ( C) = -65 to +200 ;; Hfe = 900 ;; VCE(sat) (V) = 0.20
2N3860 Chip: 4.5V; Geometry 0003; Polarity NPN
2N3866 Chip: Geometry 1007; Polarity NPN
2N3866A Package = TO-39 ;; Level = Jans ;; Vceo (V) = 30 ;; Vcbo (V) = 60 ;; Vebo (V) = 3.5 ;; Ic (A) = 0.40 ;; Power (W) ta = 1 ;; Rtja ( C/W) = ;; Tstg/top ( C) = -65 to +200 ;; Hfe = 200 ;; VCE(sat) (V) = 1.00
2N3866AUB Package = Cersot ;; Level = Jans ;; Vceo (V) = 30 ;; Vcbo (V) = 60 ;; Vebo (V) = 3.5 ;; Ic (A) = 0.40 ;; Power (W) ta = 0.5 ;; Rtja ( C/W) = 325 ;; Tstg/top ( C) = -65 to +200 ;; Hfe = 200 ;; VCE(sat)
2N3960 Package = TO-18 ;; Level = Jantxv ;; Vceo (V) = 12 ;; Vcbo (V) = 20 ;; Vebo (V) = 4.5 ;; Ic (A) = 0.05 ;; Power (W) ta = 0.4 ;; Rtja ( C/W) = ;; Tstg/top ( C) = -65 to +200 ;; Hfe = 300 ;; VCE(sat) (V) = 0.20
2N3960UB Package = Cersot ;; Level = Jantxv ;; Vceo (V) = 12 ;; Vcbo (V) = 20 ;; Vebo (V) = 4.5 ;; Ic (A) = 0.05 ;; Power (W) ta = 0.4 ;; Rtja ( C/W) = ;; Tstg/top ( C) = -65 to +200 ;; Hfe = 300 ;; VCE(sat) (V) = 0.20
2N3996 Package = ;; Level = Jantxv ;; Vceo (V) = 80 ;; Vcbo (V) = 100 ;; Vebo (V) = 8.0 ;; Ic (A) = 5.00 ;; Power (W) ta = 2 ;; Rtja ( C/W) = ;; Tstg/top ( C) = -65 to +200 ;; Hfe = 120 ;; VCE(sat) (V) = 0.25
2N3997
2N3998
2N3999
2N4029 Package = TO-18 ;; Level = Jantxv ;; Vceo (V) = 80 ;; Vcbo (V) = 80 ;; Vebo (V) = 5 ;; Ic (A) = 1.00 ;; (Power W) ta = 0.5 ;; Rtja ( C/W) = 325 ;; Tstg/top ( C) = -65 to +200 ;; Hfe = 300 ;; VCE(sat) (V) = 0.15
2N4033 Package = TO-39 ;; Level = Jantxv ;; Vceo (V) = 80 ;; Vcbo (V) = 80 ;; Vebo (V) = 5 ;; Ic (A) = 1.00 ;; (Power W) ta = 0.8 ;; Rtja ( C/W) = 175 ;; Tstg/top ( C) = -65 to +200 ;; Hfe = 300 ;; VCE(sat) (V) = 0.15
2N4033UB Package = Cersot ;; Level = Jantxv ;; Vceo (V) = 80 ;; Vcbo (V) = 80 ;; Vebo (V) = 5 ;; Ic (A) = 1.00 ;; (Power W) ta = 0.5 ;; Rtja ( C/W) = 325 ;; Tstg/top ( C) = -65 to +200 ;; Hfe = 300 ;; VCE(sat)
2N4150 Package = TO-5 ;; Level = Jantxv ;; Vceo (V) = 80 ;; Vcbo (V) = 100 ;; Vebo (V) = 10.0 ;; Ic (A) = 10.00 ;; Power (W) ta = 1 ;; Rtja ( C/W) = 175 ;; Tstg/top ( C) = -65 to +200 ;; Hfe = 120 ;; VCE(sat)
2N4150S Package = TO-39 ;; Level = Jantxv ;; Vceo (V) = 80 ;; Vcbo (V) = 100 ;; Vebo (V) = 10.0 ;; Ic (A) = 10.00 ;; Power (W) ta = 1 ;; Rtja ( C/W) = 175 ;; Tstg/top ( C) = -65 to +200 ;; Hfe = 120 ;; VCE(sat)
2N4152 Chip: Geometry 9201; Polarity NPN
2N4152L
2N4260 Chip Type 2c4261 Geometry 0014 Polarity PNP
2N4261 Package = TO-72 ;; Level = Jans ;; Vceo (V) = 15 ;; Vcbo (V) = 15 ;; Vebo (V) = 4.5 ;; Ic (A) = 0.03 ;; (Power W) ta = 0.2 ;; Rtja ( C/W) = 860 ;; Tstg/top ( C) = -65 to +200 ;; Hfe = 150 ;; VCE(sat) (V) = 0.15
2N4261UB Package = Cersot ;; Level = Jans ;; Vceo (V) = 15 ;; Vcbo (V) = 15 ;; Vebo (V) = 4.5 ;; Ic (A) = 0.03 ;; (Power W) ta = 0.2 ;; Rtja ( C/W) = 860 ;; Tstg/top ( C) = -65 to +200 ;; Hfe = 150 ;; VCE(sat)