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Details, datasheet, quote on part number: 2N5151LJV
 
 
Part number2N5151LJV
CategoryDiscrete => Transistors => Transistors => 8433276
TitleSMALL SIGNAL TRANSISTOR
Description
CompanySemicoa Semiconductors
DatasheetDownload 2N5151LJV datasheet
 
 
Specifications, Features, Applications

Description SEMICOA Corporation offers:· Screening and processing per MIL-PRF-19500 Appendix E· JAN level (2N5151LJ)· JANTX level (2N5151LJX)· JANTXV level (2N5151LJV)· JANS level (2N5151LJS)· JANSR level (2N5151LJSR)· JANSF level (2N5151LJSF)· QCI to the applicable level· 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS· Radiation testing (total dose) upon request

Applications
· High-speed power switching· Low power· PNP silicon transistor
Features

· Hermetically sealed TO-5 metal can Also available in chip configuration Chip geometry 9702 Reference document: MIL-PRF-19500/545

Please contact Semicoa for special configurations www.SEMICOA.com (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, = 25OC Derate linearly above 25OC Power Dissipation, = 25OC Derate linearly above 25OC Thermal Resistance Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PT PT· Qualification Levels: JAN, JANTX, JANTXV, JANS, JANSR and JANSF· Radiation testing available

333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page of 2

Off Characteristics Parameter Collector-Emitter Breakdown Voltage Collector-Emitter Cutoff Current Collector-Emitter Cutoff Current Collector-Emitter Cutoff Current Collector-Emitter Cutoff Current Emitter-Base Cutoff Current Emitter-Base Cutoff Current On Characteristics Parameter Symbol hFE3 hFE4 VBE VCEsat1 VCEsat2 Symbol |hFE| hFE COBO Test Conditions = 50 mA, VCE = 5 Volts 2.5 A, VCE = 5 Volts 5 A, VCE = 5 Volts 2.5 A, VCE = 5 Volts = -55°C VCE = 5 Volts, 500 mA Test Conditions VCE = 5 Volts, = 500 mA, = 10 MHz VCE = 5 Volts, = 100 mA, = 1 kHz VCB = 10 Volts, = 0 mA, = 1 MHz Symbol V(BR)CEO ICES1 ICES2 ICEO ICEX IEBO1 Test Conditions 100 mA VCE = 60 Volts VCE = 100 Volts VCE = 40 Volts VCE = 60 Volts, VEB = 2 Volts, = 150°C VEB = 4 Volts VEB = 5.5 Volts Min Typ Max Units Volts µA mA

Pulse Test: Pulse Width = 300 µs, Duty Cycle 2.0%

Base-Emitter Voltage Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Dynamic Characteristics Parameter Magnitude ­ Common Emitter, Short Circuit Forward Current Transfer Ratio Small Signal Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Switching Characteristics Saturated Turn-On Time Storage Time Fall Time Saturated Turn-Off Time

333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page of 2



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