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Details, datasheet, quote on part number: 2N5151LJV
Part2N5151LJV
CategoryDiscrete => Transistors => Transistors => 8433276
TitleSMALL SIGNAL TRANSISTOR
Description
CompanySemicoa Semiconductors
DatasheetDownload 2N5151LJV datasheet
  

 

Features, Applications

Description SEMICOA Corporation offers: Screening and processing per MIL-PRF-19500 Appendix E JAN level (2N5151LJ) JANTX level (2N5151LJX) JANTXV level (2N5151LJV) JANS level (2N5151LJS) JANSR level (2N5151LJSR) JANSF level (2N5151LJSF) QCI to the applicable level 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS Radiation testing (total dose) upon request

Applications
High-speed power switching Low power PNP silicon transistor
Features

Hermetically sealed TO-5 metal can Also available in chip configuration Chip geometry 9702 Reference document: MIL-PRF-19500/545

Please contact Semicoa for special configurations www.SEMICOA.com (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, = 25OC Derate linearly above 25OC Power Dissipation, = 25OC Derate linearly above 25OC Thermal Resistance Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PT PT Qualification Levels: JAN, JANTX, JANTXV, JANS, JANSR and JANSF Radiation testing available

333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page of 2

Off Characteristics Parameter Collector-Emitter Breakdown Voltage Collector-Emitter Cutoff Current Collector-Emitter Cutoff Current Collector-Emitter Cutoff Current Collector-Emitter Cutoff Current Emitter-Base Cutoff Current Emitter-Base Cutoff Current On Characteristics Parameter Symbol hFE3 hFE4 VBE VCEsat1 VCEsat2 Symbol |hFE| hFE COBO Test Conditions = 50 mA, VCE = 5 Volts 2.5 A, VCE = 5 Volts 5 A, VCE = 5 Volts 2.5 A, VCE = 5 Volts = -55C VCE = 5 Volts, 500 mA Test Conditions VCE = 5 Volts, = 500 mA, = 10 MHz VCE = 5 Volts, = 100 mA, = 1 kHz VCB = 10 Volts, = 0 mA, = 1 MHz Symbol V(BR)CEO ICES1 ICES2 ICEO ICEX IEBO1 Test Conditions 100 mA VCE = 60 Volts VCE = 100 Volts VCE = 40 Volts VCE = 60 Volts, VEB = 2 Volts, = 150C VEB = 4 Volts VEB = 5.5 Volts Min Typ Max Units Volts A mA

Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%

Base-Emitter Voltage Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Dynamic Characteristics Parameter Magnitude Common Emitter, Short Circuit Forward Current Transfer Ratio Small Signal Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Switching Characteristics Saturated Turn-On Time Storage Time Fall Time Saturated Turn-Off Time

333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page of 2

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