Details, datasheet, quote on part number: 2N5660
Part2N5660
CategoryDiscrete => Transistors => Bipolar => General Purpose => NPN
DescriptionPackage = TO-66 ;; Level = Jantxv ;; Vceo (V) = 200 ;; Vcbo (V) = 250 ;; Vebo (V) = 6.0 ;; Ic (A) = 2.00 ;; Power (W) ta = 2 ;; Rtja ( C/W) = ;; Tstg/top ( C) = -65 to +200 ;; Hfe = 120 ;; VCE(sat) (V) = 0.40
CompanySemicoa Semiconductors
DatasheetDownload 2N5660 datasheet
Quote
Find where to buy
 
  
Related products with the same datasheet
2N5660J
2N5660JV
2N5660JX
Some Part number from the same manufacture Semicoa Semiconductors
2N5660J Package = TO-66 ;; Level = Jantxv ;; Vceo (V) = 200 ;; Vcbo (V) = 250 ;; Vebo (V) = 6.0 ;; Ic (A) = 2.00 ;; Power (W) ta = 2 ;; Rtja ( C/W) = ;; Tstg/top ( C) = -65 to +200 ;; Hfe = 120 ;; VCE(sat) (V) = 0.40
2N5661 Package = TO-66 ;; Level = Jantxv ;; Vceo (V) = 300 ;; Vcbo (V) = 400 ;; Vebo (V) = 6.0 ;; Ic (A) = 2.00 ;; Power (W) ta = 2 ;; Rtja ( C/W) = ;; Tstg/top ( C) = -65 to +200 ;; Hfe = 75 ;; VCE(sat) (V) = 0.40
2N5662 Package = TO-5 ;; Level = Jantxv ;; Vceo (V) = 200 ;; Vcbo (V) = 250 ;; Vebo (V) = 6.0 ;; Ic (A) = 2.00 ;; Power (W) ta = 1 ;; Rtja ( C/W) = ;; Tstg/top ( C) = -65 to +200 ;; Hfe = 120 ;; VCE(sat) (V) = 0.40
2N5663 Package = TO-5 ;; Level = Jantxv ;; Vceo (V) = 300 ;; Vcbo (V) = 400 ;; Vebo (V) = 6.0 ;; Ic (A) = 2.00 ;; Power (W) ta = 1 ;; Rtja ( C/W) = ;; Tstg/top ( C) = -65 to +200 ;; Hfe = 75 ;; VCE(sat) (V) = 0.40
2N5664 Package = TO-66 ;; Level = Jantxv ;; Vceo (V) = 200 ;; Vcbo (V) = 250 ;; Vebo (V) = 6.0 ;; Ic (A) = 5.00 ;; Power (W) ta = 2.5 ;; Rtja ( C/W) = 3.3 ;; Tstg/top ( C) = -65 to +200 ;; Hfe = 120 ;; VCE(sat)
2N5666 Package = TO-5 ;; Level = Jantxv ;; Vceo (V) = 200 ;; Vcbo (V) = 250 ;; Vebo (V) = 6.0 ;; Ic (A) = 5.00 ;; Power (W) ta = 1.2 ;; Rtja ( C/W) = 6.7 ;; Tstg/top ( C) = -65 to +200 ;; Hfe = 120 ;; VCE(sat)
2N5666S Package = TO-39 ;; Level = Jantxv ;; Vceo (V) = 200 ;; Vcbo (V) = 250 ;; Vebo (V) = 6.0 ;; Ic (A) = 5.00 ;; Power (W) ta = 1.2 ;; Rtja ( C/W) = 6.7 ;; Tstg/top ( C) = -65 to +200 ;; Hfe = 120 ;; VCE(sat)
2N6190 Chip: Geometry 9700; Polarity PNP
2N6191
2N6192
2N6193 Package = TO-39 ;; Level = Jantxv ;; Vceo (V) = 100 ;; Vcbo (V) = 100 ;; Vebo (V) = 6 ;; Ic (A) = 5.00 ;; (Power W) ta = 1.0 ;; Rtja ( C/W) = 175 ;; Tstg/top ( C) = -65 to +200 ;; Hfe = 240 ;; VCE(sat)
2N6987 Package = Cerdip ;; Level = Jans ;; Vceo (V) = 60 ;; Vcbo (V) = 60 ;; Vebo (V) = 5 ;; Ic (A) = 0.60 ;; (Power W) ta = 1.5 ;; Rtja ( C/W) = ;; Tstg/top ( C) = -65 to +200 ;; Hfe = 300 ;; VCE(sat) (V) = 0.40
2N6988
2N6989 Package = Cerdip ;; Level = Jans ;; Vceo (V) = 50 ;; Vcbo (V) = 75 ;; Vebo (V) = 6.0 ;; Ic (A) = 0.80 ;; Power (W) ta = 2 ;; Rtja ( C/W) = ;; Tstg/top ( C) = -65 to +200 ;; Hfe = 300 ;; VCE(sat) (V) = 0.30
2N6990
2N918 Chip: 3.0V; 50mA Geometry 0013; Polarity NPN
2N918UB Chip Type 2c918 Geometry 0013 Polarity NPN
2N930 Chip: Geometry 0307; Polarity NPN
SCA-001 Package = TO-18 ;; Die Size (in) = 0.050 X 0.050 ;; Active Area (mm2) = 0.81 ;; Responsivity (A/W) = 0.57 @ 910 NM ;; Dark Current (nA) = 1.0 @ 25V ;; Capacitance (pF) = 2.0 @ 25V ;; Tstg/top ( C) = -55 to +125
SCA-005 Package = TO-5 ;; Die Size (in) = 0.135 X 0.135 ;; Active Area (mm2) = 5.1 ;; Responsivity (A/W) = 0.59 @ 960 NM ;; Dark Current (nA) = 25 @ 25V ;; Capacitance (pF) = 10 @ 25V ;; Tstg/top ( C) = -55 to +125
SCA-005OP
Same catergory

FQB7N20 : 200V N-channel QFET.

JANSR2N7405 : 25a, 100v, 0.070 Ohm, Rad Hard, N-channel Power MOSFET. The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices.

OM6025SC : 400V Single N-channel Hi-rel MOSFET in a TO-258AA Package. POWER MOSFETS IN HERMETIC ISOLATED JEDEC TO-258AA SIZE 6 DIE 400V Thru To 26 Amp N-Channel, Size 6 MOSFETs, High Energy Capability Isolated Hermetic Metal Package Size 6 Die, High Energy Fast Switching, Low Drive Current Ease of Paralleling For Added Power Low RDS(on) Available Screened To MIL-S-19500, TX, TXV And S Levels This series of hermetically.

G6A-234P : High Reliability, DPDT & 4PDT, 2A. Relay # High sensitivity and can be driven by digital circuts # High reliability # Surge withstand voltage meets FCC Part 68 regulation # Units can be mounted side by side due to low magnetic leakage # Special models available for ultrasonic cleaning and low thermoelectromotive force # Single or dual latching coil.

NGTB25N120L : IGBT 1200V 25A FS1 Gen Mkt This Insulated Gate Bipolar Transistor (IGBT) a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated.

02C1001FP : RESISTOR, TEMPERATURE DEPENDENT, NTC, 1000 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Mounting / Packaging: ThroughHole, Radial Leads, RADIAL LEADED ; Resistance Range: 1000 ohms ; Tolerance: 1 +/- %.

0805X331J101N : CAPACITOR, CERAMIC, MULTILAYER, 100 V, BX, 0.00033 uF, SURFACE MOUNT, 0805. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 3.30E-4 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 100 volts ; Mounting Style:.

DBLS101G : 1 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE. s: Diode Type: BRIDGE RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 40000 mA ; VBR: 50 volts ; Package: GREEN, PLASTIC, DBLS, 4 PIN ; Pin Count: 4 ; Number of Diodes: 4.

FCF10B60 : 10 A, 600 V, SILICON, RECTIFIER DIODE. s: Arrangement: Common Catode ; Diode Type: General Purpose, RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 10000 mA ; Pin Count: 3 ; Number of Diodes: 2.

HSM123TL : 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE. s: Diode Type: General Purpose ; IF: 100 mA ; Package: SC-59, SC-59A, MPAK-3 ; Pin Count: 3 ; Number of Diodes: 2.

KTA1273O : 2000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92. s: Polarity: PNP ; Package Type: TO-92, TO-92L, 3 PIN.

NLW125-10 : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 10 V, 125 uF, THROUGH HOLE MOUNT. s: RoHS Compliant: Yes ; : Polarized ; Capacitance Range: 125 microF ; Capacitance Tolerance: 75 (+/- %) ; WVDC: 10 volts ; Leakage Current: 6.25 microamps ; ESR: 2700 milliohms ; Mounting Style: Through Hole ; Operating Temperature: -40 to 105 C (-40 to 221 F).

SGS130 : 8 A, 60 V, NPN, Si, POWER TRANSISTOR. s: Polarity: NPN.

TS982C3R : 10 A, 300 V, SILICON, RECTIFIER DIODE. s: Arrangement: Common Catode ; Diode Type: General Purpose, RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 10000 mA ; Package: LEAD FREE, PLASTIC PACKAGE-3 ; Pin Count: 2 ; Number of Diodes: 2.

Z301 : RESISTOR, WIRE WOUND, 1 W, 1; 2; 5; 10 %, 80; 180 ppm, 0.3 ohm - 2000 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Technology / Construction: Wirewound ; Mounting / Packaging: ThroughHole, Axial Leads, AXIAL LEADED, LEAD FREE ; Operating Temperature: -55 to 250 C (-67 to 482 F).

2SB1283-4000 : 7 A, 100 V, PNP, Si, POWER TRANSISTOR. s: Polarity: PNP ; Package Type: TO-220, ITO-220, 3 PIN.

 
0-C     D-L     M-R     S-Z