|
|
Part: 2N2223A
Category:
Discrete
-> Transistors
-> Bipolar
Description: Screening Options Available = ;; Polarity = NPN ;; Package = TO77 (MO002AF) ;; Vceo = 80V ;; IC(cont) = 0.5A ;; HFE(min) = 50 ;; HFE(max) = 200 ;; @ Vce/ic = 5V / 10mA ;; FT = 50MHz ;; PD = 0.6W
Company: Semelab Plc
Datasheet: Download 2N2223A datasheet File size : 239 kB
Request For quote: Find where to buy 2N2223A
Datasheet text preview:
LAB
MECHANICAL DATA Dimensions in mm (inches)
8.51 (0.335) 9.40 (0.370) 7.75 (0.305) 8.51 (0.335)
SEME
2N2223A
DUAL NPN TRANSISTOR IN TO77 HERMETIC PACKAGE
FEATURES
1.02 (0.040) Max.
6 .1 0 (0.240) 6 .6 0 (0.260)
· ·
Silicon Planar Epitaxial NPN Transistor High Rel and Screening Options Available.
1 2 .7 (0.500) M in .
0.41 (0.016) 0.53 (0.021) 5.08 (0.200) 2.54 (0.100)
2.54 (0.100)
3 2
4
5 6
0.74 (0.029) 1.14 (0.045)
1
45°
0.71 (0.028) 0.86 (0.034)
TO77 METAL PACKAGE
PIN 1 Collector PIN 2 Base PIN 3 Emitter PIN 4 Emitter PIN 5 Base PIN 6 Collector
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCEO VCER VCBO VEBO IC TJ , Tstg PD PD Collector Emitter Voltage Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Operating and Storage Junction Temperature Range Total Device Dissipation Total Device Dissipation @ TA = 25°C Derate above 25°C @ TC = 25°C Derate above 25°C 60V 80V 100V 7V 500mA 65 to +200°C Per Side Total Device 0.5W 0.6W 2.86mW/°C 3.43mW/°C 1.6W 3.0W 9.1mW/°C 11.4mW/°C
Prelim. 5/98
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
LAB
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Parameter Test Conditions
RBE £ 10W IB = 0 IE = 0 IC = 0 TA = 150°C IC = 0 VCE = 5V VCE = 5V VCE = 5V IB = 5mA IB = 5mA VCE = 10V VCB = 10V VBE = 0.5V VCB = 5V VCE = 5V 15 25 50 150 200 1.2 0.9 V --
SEME
2N2223A
Min.
80 60 100 7
Typ.
Max. Unit
V
OFF CHARACTERISTICS VCER(sus)* Collector Emitter Breakdown Voltage IC = 100mA VCEO(sus)* Collector Emitter Sustaining Voltage IC = 30mA V(BR)CBO V(BR)EBO ICBO IEBO Collector Base Breakdown Voltage Emitter Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current ON CHARACTERISTICS IC = 10mA hFE VCE(sat) VBE(sat) DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS fT Cob Cib hib hfe hoe hFE1/hFE2 Current Gain Bandwidth Product Output Capacitance Input Capacitance Input Impedance Small Signal Current Gain Output Admittance MATCHING CHARACTERISTICS DC Current Gain Ratio 1 Base Emitter Voltage Differential Base Emitter Voltage Differential Change Due To Temperature IC = 50mA f = 20MHz IE = 0 f = 1MHz IC = 0 f = 1MHz IC = 1mA f = 1kHz IC = 1mA f = 1kHz IC = 100mA IC = 100mA IC = 100mA IC = 100mA IC = 10mA IC = 50mA IC = 50mA IC = 100mA IE = 100mA VCB = 80V IE = 0 VBE = 5V
V V V 0.01 15 10
mA
nA
50 15 85 20 40 30 200 .05
MHz pF pF
W
--
mmhos
VCE = 5V VCE = 5V VCE = 5V
0.9 5.0
1.0 25
-- mV
mV/°C
½VBE1-VBE2½ D(VBE1-VBE2) DT
TA = 55 to +125°C
* Pulse Test: tp £ 300ms, d £ 2%. 1) The lowest hFE reading is taken as hFE1 for this ratio.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 5/98
Others parts begin by 2n
2N-1 2N-2 2N-3 2N-4 2N-5 2N-6 2N-7 2N-8 2N-9 2N-10 2N-11 2N-12 2N-13 2N-14 2N-15 2N-16 2N-17 2N-18 2N-19 2N-20 2N-21 2N-22 2N-23 2N-24 2N-25 2N-26 2N-27 2N-28 2N-29 2N-30 2N-31
|
|
|
