Details, datasheet, quote on part number: 2N3790X
Part2N3790X
CategoryDiscrete => Transistors => Bipolar
DescriptionScreening Options Available = ;; Polarity = PNP ;; Package = TO3 (TO204AA) ;; Vceo = 80V ;; IC(cont) = 10A ;; HFE(min) = 25 ;; HFE(max) = 175 ;; @ Vce/ic = 2V / 1A ;; FT = 4MHz ;; PD = 150W
CompanySemelab Plc
DatasheetDownload 2N3790X datasheet
  

 

Features, Applications

Bipolar PNP Device in a Hermetically sealed TO3 Metal Package.

All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications.

* Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk.

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.


 

Some Part number from the same manufacture Semelab Plc
2N3790XSMD Screening Options Available = ;; Polarity = PNP ;; Package = SMD1 (TO276AB) ;; Vceo = 80V ;; IC(cont) = 10A ;; HFE(min) = 25 ;; HFE(max) = 175 ;; @ Vce/ic = 2V / 1A ;; FT = 4MHz ;; PD = 150W
2N3791 Screening Options Available = ;; Polarity = PNP ;; Package = TO3 (TO204AA) ;; Vceo = 60V ;; IC(cont) = 10A ;; HFE(min) = 50 ;; HFE(max) = 150 ;; @ Vce/ic = 2V / 1A ;; FT = 4MHz ;; PD = 150W
2N3791SMD Screening Options Available = ;; Polarity = PNP ;; Package = SMD1 (TO276AB) ;; Vceo = 60V ;; IC(cont) = 10A ;; HFE(min) = 50 ;; HFE(max) = 150 ;; @ Vce/ic = 2V / 1A ;; FT = 4MHz ;; PD = 150W
2N3792 Screening Options Available = ;; Polarity = PNP ;; Package = TO3 (TO204AA) ;; Vceo = 80V ;; IC(cont) = 10A ;; HFE(min) = 50 ;; HFE(max) = 180 ;; @ Vce/ic = 2V / 1A ;; FT = 4MHz ;; PD = 150W
2N3792SMD Screening Options Available = ;; Polarity = PNP ;; Package = SMD1 (TO276AB) ;; Vceo = 80V ;; IC(cont) = 10A ;; HFE(min) = 50 ;; HFE(max) = 180 ;; @ Vce/ic = 2V / 1A ;; FT = 4MHz ;; PD = 150W
2N3799 Screening Options Available = ;; Polarity = PNP ;; Package = TO18 (TO206AA) ;; Vceo = 60V ;; IC(cont) = 0.05A ;; HFE(min) = 250 ;; HFE(max) = - ;; @ Vce/ic = 5V / 10mA ;; FT = 500MHz ;; PD = 0.36W
2N3799X
2N3800
2N3800DCSM Screening Options Available = ;; Polarity = PNP ;; Package = LCC2 (MO-041BB) ;; Vceo = 60V ;; IC(cont) = 0.05A ;; HFE(min) = 150 ;; HFE(max) = - ;; @ Vce/ic = 10V / 1mA ;; FT = 100MHz ;; PD = 0.25W
2N3801
2N3801DCSM Screening Options Available = ;; Polarity = PNP ;; Package = LCC2 (MO-041BB) ;; Vceo = 60V ;; IC(cont) = 0.05A ;; HFE(min) = 300 ;; HFE(max) = - ;; @ Vce/ic = 10V / 1mA ;; FT = 100MHz ;; PD = 0.25W
2N3802
2N3802DCSM Screening Options Available = ;; Polarity = PNP ;; Package = LCC2 (MO-041BB) ;; Vceo = 60V ;; IC(cont) = 0.05A ;; HFE(min) = 150 ;; HFE(max) = - ;; @ Vce/ic = 10V / 1mA ;; FT = 100MHz ;; PD = 0.25W
2N3803
2N3803DCSM Screening Options Available = ;; Polarity = PNP ;; Package = LCC2 (MO-041BB) ;; Vceo = 60V ;; IC(cont) = 0.05A ;; HFE(min) = 300 ;; HFE(max) = - ;; @ Vce/ic = 10V / 1mA ;; FT = 100MHz ;; PD = 0.25W
2N3804
2N3804ADCSM Screening Options Available = ;; Polarity = PNP ;; Package = LCC2 (MO-041BB) ;; Vceo = 60V ;; IC(cont) = 0.05A ;; HFE(min) = 150 ;; HFE(max) = - ;; @ Vce/ic = 10V / 1mA ;; FT = 100MHz ;; PD = 0.26W
2N3804CSM
2N3804DCSM Screening Options Available = ;; Polarity = PNP ;; Package = LCC2 (MO-041BB) ;; Vceo = 60V ;; IC(cont) = 0.05A ;; HFE(min) = 150 ;; HFE(max) = - ;; @ Vce/ic = 10V / 1mA ;; FT = 100MHz ;; PD = 0.25W
2N3805
2N3805A
Same catergory

BT139B-800E : Triacs Sensitive Gate. Passivated, sensitive gate triacs in a plastic envelope suitable for surface mounting, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants. SYMBOL VDRM IT(RMS) ITSM PARAMETER BT139BRepetitive peak off-state voltages RMS on-state current Non-repetitive peak.

CMPTA13 : NPN - Silicon Darlington Transistor Chip. : The CENTRAL SEMICONDUCTOR CMPTA13, CMPTA63 series types are complementary silicon darlington transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring extremely high gain. MARKING CODES: CMPTA64: C2V MAXIMUM RATINGS (TA=25 C) Collector-Base Voltage Collector-Emitter Voltage.

EFA060B-100F : GaAs. Low Distortion GAAS Power Fets. HERMETIC 100mil CERAMIC FLANGE PACKAGE +25.0dBm TYPICAL OUTPUT POWER 8.0dB TYPICAL POWER GAIN X 600 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY SYMBOLS P1dB G1dB PAE Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression Vds=8V,.

FST5020 : 5 to 100 Amp. Schottky Rectifier.

MP04HBN490 : Thyristor (SCR) / Diode Modules - AIR Cooled. Dual Device Module Electrically Isolated Package Pressure Contact Construction International Standard Footprint Alumina (Non Toxic) Isolation Medium Integral Water Cooled Heatsink KEY PARAMETERS VDRM IT(AV) ITSM(per arm) Visol APPLICATIONS Motor Control Controlled Rectifier Bridges Heater Control AC Phase Control Type Number Repetitive Peak Voltages.

SBC558 : Small Signal Transistor, General Purpose Bipolar Transistor. Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature Collector-Emitter breakdown voltage Base-Emitter turn on voltage Base-Emitter saturation voltage Collector-Emitter saturation voltage Collector cut-off current DC current gain Transition frequency Collector.

SFU9214 : 250V P-channel A-FET. Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = -250V Lower RDS(ON) : 3.15 (Typ.) Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current.

SPR30-SPR34 : . 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 PROPRIETARY SOFT GLASS JUNCTION PASSIVATION FOR SUPERIOR RELIABILITY AND PERFORMANCE VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM MECHANICAL STRENGTH AND HEAT DISSIPATION (Solder Voids: Typical < 2%, Max. 10% of Die Area) LOW SWITCHING NOISE LOW THERMAL RESISTANCE.

STPS40100HR : Diodes & Rectifiers For Aerospace Aerospace 2 x 20 A - 100 V Schottky rectifier.

BUK6213-30C : N-channel TrenchMOS Intermediate Level FET Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications..

SMBGP6KE10 : 600watt Transient Voltage Suppressor 600watt Transient Voltage Suppressor.

05002300CGZP : CAPACITOR, CERAMIC, MULTILAYER, 200 V, BP, 0.00003 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; Capacitance Range: 3.00E-5 microF ; Capacitance Tolerance: 2 (+/- %) ; WVDC: 200 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface Mount Technology.

A05473F0.07 : RES NET,THICK FILM,47K OHMS,200WV,1% +/-TOL,-100,100PPM TC,3412 CASE. s: Configuration: Chip Array ; Category / Application: General Use.

B4-1900-50-25 : 1800 MHz - 2000 MHz RF TRANSFORMER. s: Category: Signal ; Other Transformer Types / Applications: RF ; Mounting: Chip Transformer ; Operating Temperature: -55 to 125 C (-67 to 257 F).

T491E687K006AG : CAPACITOR, TANTALUM, SOLID, POLARIZED, 6.3 V, 680 uF, SURFACE MOUNT, 7260-38M. s: Configuration / Form Factor: Chip Capacitor ; RoHS Compliant: Yes ; General : Polarized ; Capacitance Range: 680 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 6.3 volts ; Leakage Current: 40.8 microamps ; Mounting Style: Surface Mount Technology ; EIA Case Size: 7260-38M.

TSD2902 : UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET. s: Polarity: N-Channel ; Operating Mode: Enhancement ; V(BR)DSS: 60 volts ; Package Type: 0.380 INCH, M113, 4 PIN ; Number of units in IC: 1.

1821VAMA100GTN0810 : CAP,AL2O3,820UF,400VDC,20% -TOL,20% +TOL. s: Applications: General Purpose ; Electrolytic Capacitors: Aluminum Electrolytic.

1825AA152JAX9A : CAPACITOR, CERAMIC, MULTILAYER, 1000 V, C0G, 0.0015 uF, SURFACE MOUNT, 1825. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; Capacitance Range: 0.0015 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 1000 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface Mount Technology.

 
0-C     D-L     M-R     S-Z