FEATURES
· SILICON PLANAR EPITAXIAL PNP TRANSISTOR· CECC SCREENING OPTIONS· LOW NOISE AMPLIFIER
· Low Level Amplifier· Instrumentation Amplifiers· General Purpose
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO VCEO VEBO TJ , TSTG RqJA RqJC Semelab plc. Collector Base Voltage Collector Emitter Voltage (IB = 0) Emitter Base Voltage (IB = 0) Collector Current Total Device Dissipation = 25°C Derate above 25°C Total Device Dissipation = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Resistance Junction to Ambient Thermal Resistance Junction to Case
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter Test Conditions
V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) Collector Emitter Breakdown Voltage = 10mA Collector Base Breakdown Voltage Emitter Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Base Emitter On Voltage = 10mA VEB = 10mA VCE = 55°C
SMALL SIGNAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter Test Conditions Min.
Output Capacitance Input Capacitance Input Impedance Output Admittance Voltage Feedback Ratio Small Signal Current Gain
ft is defined as the frequency at which |hfe| extrapolates to untity.
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