Details, datasheet, quote on part number: 2N3810XDCSM
Part2N3810XDCSM
CategoryDiscrete => Transistors => Bipolar
DescriptionScreening Options Available = ;; Polarity = PNP ;; Package = LCC2 (MO-041BB) ;; Vceo = 60V ;; IC(cont) = 0.05A ;; HFE(min) = 300 ;; HFE(max) = - ;; @ Vce/ic = 10V / 1mA ;; FT = 100MHz ;; PD = 0.5W
CompanySemelab Plc
DatasheetDownload 2N3810XDCSM datasheet
  

 

Features, Applications

Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability Applications

All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications.

* Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk.

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.


 

Some Part number from the same manufacture Semelab Plc
2N3811
2N3811A
2N3811ADCSM Screening Options Available = ;; Polarity = PNP ;; Package = LCC2 (MO-041BB) ;; Vceo = 60V ;; IC(cont) = 0.05A ;; HFE(min) = 300 ;; HFE(max) = - ;; @ Vce/ic = 10V / 1mA ;; FT = 100MHz ;; PD = 0.5W
2N3811DCSM
2N3811X
2N3811XDCSM Screening Options Available = ;; Polarity = PNP ;; Package = LCC2 (MO-041BB) ;; Vceo = 60V ;; IC(cont) = 0.05A ;; HFE(min) = 300 ;; HFE(max) = - ;; @ Vce/ic = 10V / 1mA ;; FT = 100MHz ;; PD = 0.5W
2N3824
2N3824-TO46
2N3824-TO72
2N3824LP
2N3829
2N3829X
2N3830 Screening Options Available = ;; Polarity = NPN ;; Package = TO39 (TO205AD) ;; Vceo = 50V ;; IC(cont) = 1.2A ;; HFE(min) = 30 ;; HFE(max) = - ;; @ Vce/ic = 1V / 500mA ;; FT = 200MHz ;; PD = 1W
2N3830L Screening Options Available = ;; Polarity = NPN ;; Package = TO5 (TO205AA) ;; Vceo = 50V ;; IC(cont) = 1.2A ;; HFE(min) = 30 ;; HFE(max) = - ;; @ Vce/ic = 1V / 500mA ;; FT = 200MHz ;; PD = 1W
2N3831 Screening Options Available = ;; Polarity = NPN ;; Package = TO39 (TO205AD) ;; Vceo = 40V ;; IC(cont) = 1.2A ;; HFE(min) = 35 ;; HFE(max) = - ;; @ Vce/ic = 1V / 500mA ;; FT = 200MHz ;; PD = 1W
2N3839
2N3866 Screening Options Available = ;; Polarity = NPN ;; Package = TO39 (TO205AD) ;; Vceo = 30V ;; IC(cont) = 0.5A ;; HFE(min) = 10 ;; HFE(max) = 200 ;; @ Vce/ic = 5V / 50mA ;; FT = 500MHz ;; PD = 5W
2N3866SMD Screening Options Available = ;; Polarity = NPN ;; Package = SMD1 (TO276AB) ;; Vceo = 30V ;; IC(cont) = 0.5A ;; HFE(min) = 10 ;; HFE(max) = 200 ;; @ Vce/ic = 5V / 50mA ;; FT = 500MHz ;; PD = 5W
2N3867 Screening Options Available = ;; Polarity = PNP ;; Package = TO39 (TO205AD) ;; Vceo = 40V ;; IC(cont) = 1A ;; HFE(min) = 25 ;; HFE(max) = - ;; @ Vce/ic = 3V / 2.5A ;; FT = 80MHz ;; PD = 1W
2N3867SMD Screening Options Available = ;; Polarity = PNP ;; Package = SMD1 (TO276AB) ;; Vceo = 40V ;; IC(cont) = 1A ;; HFE(min) = 25 ;; HFE(max) = - ;; @ Vce/ic = 3V / 2.5A ;; FT = 80MHz ;; PD = 1W
2N3867SMD05 Screening Options Available = ;; Polarity = PNP ;; Package = SMD0.5 (TO276AA) ;; Vceo = 40V ;; IC(cont) = 1A ;; HFE(min) = 25 ;; HFE(max) = - ;; @ Vce/ic = 3V / 2.5A ;; FT = 80MHz ;; PD = 1W
Same catergory

2SK2715 : . F 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed 30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel MOSFET FExternal dimensions (Units: mm) .

2SK3522-01 : High voltage. High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Ratings Unit 500 A Continuous drain current 25 A Pulsed drain current 100 V Gate-source voltage 30 A Repetitive or non-repetitive 25 mJ Maximum Avalanche Energy 336.5.

BAT54-T1 : Small Signal Schottky Diodes.

ES3A/B : Surface Mount Rectifier. 3.0a Surface Mount Super-fast Rectifier.

PA905C6 : Low-loss Fast Recovery. Low VF Super high speed switching High reliability by planer design Applications Item Repetitive peak reverse voltage Non-repetitive peak reverse voltage Average output current Surge current Operating junction temperature Storage temperature Symbol VRRM VRSM IO IFSM Tj Tstg Square wave, duty=1/2, Tc=100C Sine wave 10ms Conditions Rating to +150 Unit.

SGR2N60UF : Discrete, High Performance Igbt. Fairchild's UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is a required feature. High speed switching Low saturation voltage : VCE(sat) = 1.2A High input impedance Applications & DC motor.

STPS1L30MF : Single Schottky rectifier suited for switch mode power supplies and high frequency DC to DC converters. Packaged in STmite flat, this device is intended for use in very low voltage, high frequency inverters, free wheeling and polarity protection applications. Due to the very small size of the package this device fits battery powered equipment (cellular,.

BAV20/A52A : 0.25 A, 200 V, SILICON, SIGNAL DIODE, DO-35. s: Package: HERMETIC SEALED, GLASS, SC-40, 2 PIN ; Number of Diodes: 1 ; IF: 250 mA.

BZV55C4.7BS : 4.7 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE. s: Diode Type: VOLTAGE REGULATOR DIODE ; RoHS Compliant: RoHS.

DA05CN-LF : 800 W, BIDIRECTIONAL, 8 ELEMENT, SILICON, TVS DIODE. s: Diode Type: Transient Voltage Suppressor Diodes ; VBR: 6 volts ; Package: ROHS AND REACH COMPLIANT, PLASTIC, DIP-16 ; Pin Count: 16 ; Number of Diodes: 8.

HIT562-HQ : 1000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: PNP ; Package Type: TO-92, HALOGEN FREE AND LEAD FREE, SC-51, TO-92MOD, 3 PIN.

IRLF120PBF : 5.3 A, 100 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 100 volts ; rDS(on): 0.3500 ohms ; Package Type: TO-3, TO-39, HERMETIC SEALED, TO-39, 3 PIN ; Number of units in IC: 1.

LLQ1005-F10NG : 1 ELEMENT, 0.01 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Core Material: Ceramic ; Lead Style: ONE SURFACE ; Application: General Purpose, RF Choke ; Inductance Range: 0.0100 microH ; Rated DC Current: 480 milliamps ; Operating Temperature: -40 to 125 C (-40 to 257 F).

S25A310FR : 3 PHASE, 20 A, SILICON, BRIDGE RECTIFIER DIODE. s: Diode Type: BRIDGE RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 125000 mA ; Pin Count: 5 ; Number of Diodes: 6.

SK015L56 : 15 A, 1000 V, SCR, TO-220AB. s: VDRM: 1000 volts ; VRRM: 1000 volts ; IT(RMS): 15 amps ; IGT: 30 mA ; Package Type: TO-220, ROHS COMPLIANT, PLASTIC, TO-220L, 3 PIN ; Pin Count: 3.

SV5415 : 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-35. s: Package: HERMETIC SEALED, 301, 2PIN ; Number of Diodes: 1 ; VRRM: 50 volts ; IF: 3000 mA ; trr: 0.1500 ns.

ULRB11206R0050FLFSLTA : RESISTOR, CURRENT SENSE, METAL STRIP, 1 W, 1 %, 100 ppm, 0.005 ohm, SURFACE MOUNT, 1206. s: Category / Application: Current Sensing, General Use ; Technology / Construction: METAL STRIP ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), 1206, CHIP, ROHS COMPLIANT ; Resistance Range: 0.0050 ohms ; Tolerance: 1 +/- % ; Temperature Coefficient:.

7N80G-TF2-T : POWER, FET. The UTC is an N-channel mode power MOSFET using UTC's advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 7N80 is universally applied.

8550SC : TRANSISTOR,BJT,PNP,20V V(BR)CEO,700MA I(C),SOT-23. s: Transistor Type / Technology: BJT.

 
0-C     D-L     M-R     S-Z