The 2N5151 and the 2N5153 are silicon expitaxial planar PNP transistors in jedec TO-39 metal case intended for use in switching applications.
ABSOLUTE MAXIMUM RATINGS TCASE = 25°c unless otherwise stated
VCBO VCEO VEBO IC IC(PK) IB Ptot Collector Base Voltage Collector Emitter Voltage (IB = 0) Emitter Base Voltage (IC = 0) Continuous Collector Current Peak Collector Current Base Current Total Dissipation at Tamb = 25°C Tcase = 50°C Tcase = 100°C Tstg Tj Operating and Storage Temperature Range Junction temperature
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Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max 15 175 °C/W
ELECTRICAL CHARACTERISTICS FOR 2N5151 (Tcase = 25°C unless otherwise stated)
ICES ICEV ICEO IEBO Collector Cut Off Current Collector Cut Off Current Collector Cut Off Current Emitter Cut Off Current
VCEO(SUS) Collector Emitter Saturation Voltage VCE(sat) VBE(sat) VBE hFE Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Base Emitter Voltage DC Current Gain
Collector Base Capacitance Small Signal Current Gain
ELECTRICAL CHARACTERISTICS FOR 2N5153 (Tcase = 25°C unless otherwise stated)
Tcase IC =2.5A VCE = -5V CCBO hFE Collector Base Capacitance Small Signal Current Gain = 20MHz ton toff Turn On Time Turn Off Time = 0.5A VCC = 30V VCC = 30v VCE = -5v VCE = -5V VCB = -10V