Details, datasheet, quote on part number: 2N5151S
Part2N5151S
CategoryDiscrete => Transistors => Bipolar
DescriptionScreening Options Available = ;; Polarity = PNP ;; Package = TO39 (TO205AD) ;; Vceo = 80V ;; IC(cont) = 5A ;; HFE(min) = 30 ;; HFE(max) = 90 ;; @ Vce/ic = 5V / 2.5A ;; FT = 60MHz ;; PD = 10W
CompanySemelab Plc
DatasheetDownload 2N5151S datasheet
  

 

Features, Applications

Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. Bipolar PNP Device.

All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications

* Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk.

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.


 

Some Part number from the same manufacture Semelab Plc
2N5151SMD05
2N5151SMD05 Screening Options Available = ;; Polarity = PNP ;; Package = SMD0.5 (TO276AA) ;; Vceo = 80V ;; IC(cont) = 5A ;; HFE(min) = 30 ;; HFE(max) = 90 ;; @ Vce/ic = 5V / 2.5A ;; FT = 60MHz ;; PD = 1W
2N5152 Screening Options Available = ;; Polarity = NPN ;; Package = TO39 (TO205AD) ;; Vceo = 80V ;; IC(cont) = 5A ;; HFE(min) = 30 ;; HFE(max) = 90 ;; @ Vce/ic = 5V / 2.5A ;; FT = 60MHz ;; PD = 10W
2N5152A
2N5152S
2N5152SMD Screening Options Available = ;; Polarity = NPN ;; Package = SMD1 (TO276AB) ;; Vceo = 80V ;; IC(cont) = 5A ;; HFE(min) = 30 ;; HFE(max) = 90 ;; @ Vce/ic = 5V / 2.5A ;; FT = 60MHz ;; PD = 10W
2N5152SMD05 Screening Options Available = ;; Polarity = NPN ;; Package = TO39 (TO205AD) ;; Vceo = 80V ;; IC(cont) = 5A ;; HFE(min) = 30 ;; HFE(max) = 90 ;; @ Vce/ic = 5V / 2.5A ;; FT = 60MHz ;; PD = 10W
2N5152U3 Screening Options Available = ;; Polarity = NPN ;; Package = SMD0.5 (TO276AA) ;; Vceo = 80V ;; IC(cont) = 5A ;; HFE(min) = 30 ;; HFE(max) = 90 ;; @ Vce/ic = 5V / 2.5A ;; FT = 60MHz ;; PD = 10W
2N5153 Screening Options Available = ;; Polarity = PNP ;; Package = TO39 (TO205AD) ;; Vceo = 80V ;; IC(cont) = 5A ;; HFE(min) = 30 ;; HFE(max) = 90 ;; @ Vce/ic = 5V / 2.5A ;; FT = 60MHz ;; PD = 10W
2N5153-220M Screening Options Available = ;; Polarity = PNP ;; Package = TO257AB (TO220M) ;; Vceo = 80V ;; IC(cont) = 5A ;; HFE(min) = 30 ;; HFE(max) = 90 ;; @ Vce/ic = 5V / 2.5A ;; FT = 60MHz ;; PD = 10W
2N5153S Screening Options Available = ;; Polarity = PNP ;; Package = TO39 (TO205AD) ;; Vceo = 80V ;; IC(cont) = 5A ;; HFE(min) = 70 ;; HFE(max) = 200 ;; @ Vce/ic = 5V / 2.5A ;; FT = 60MHz ;; PD = 10W
2N5153SMD Screening Options Available = ;; Polarity = PNP ;; Package = SMD1 (TO276AB) ;; Vceo = 80V ;; IC(cont) = 5A ;; HFE(min) = 70 ;; HFE(max) = 200 ;; @ Vce/ic = 5V / 2.5A ;; FT = 60MHz ;; PD = 10W
2N5153SMD05 Screening Options Available = ;; Polarity = PNP ;; Package = SMD0.5 (TO276AA) ;; Vceo = 80V ;; IC(cont) = 5A ;; HFE(min) = 70 ;; HFE(max) = 200 ;; @ Vce/ic = 5V / 2.5A ;; FT = 60MHz ;; PD = 10W
2N5153U3
2N5154 Screening Options Available = ;; Polarity = NPN ;; Package = TO39 (TO205AD) ;; Vceo = 80V ;; IC(cont) = 5A ;; HFE(min) = 30 ;; HFE(max) = 90 ;; @ Vce/ic = 5V / 2.5A ;; FT = 60MHz ;; PD = 10W
2N5154S
2N5154SMD Screening Options Available = ;; Polarity = NPN ;; Package = SMD1 (TO276AB) ;; Vceo = 80V ;; IC(cont) = 5A ;; HFE(min) = 70 ;; HFE(max) = 200 ;; @ Vce/ic = 5V / 2.5A ;; FT = 60MHz ;; PD = 10W
2N5154SMD05 Screening Options Available = ;; Polarity = NPN ;; Package = SMD0.5 (TO276AA) ;; Vceo = 75V ;; IC(cont) = 5A ;; HFE(min) = 70 ;; HFE(max) = 200 ;; @ Vce/ic = 5V / 2.5A ;; FT = 60MHz ;; PD = 1W
2N5154X Screening Options Available = ;; Polarity = NPN ;; Package = TO39 (TO205AD) ;; Vceo = 80V ;; IC(cont) = 5A ;; HFE(min) = 75 ;; HFE(max) = 200 ;; @ Vce/ic = 5V / 2.5A ;; FT = 60MHz ;; PD = 10W
2N5157 Screening Options Available = ;; Polarity = NPN ;; Package = TO3 (TO204AA) ;; Vceo = 500V ;; IC(cont) = 3.5A ;; HFE(min) = 30 ;; HFE(max) = 90 ;; @ Vce/ic = 5V / 1A ;; FT = 2.8MHz ;; PD = 100W
2N5179
Same catergory

02DZ12 : Diode ( Constant Voltage Regulation Applications. ).

BAV99RWT1 : Reverse Dual Diode , Package: SC-70 (SOT-323), Pins=3. ESD Protection Polarity Reversal Protection Data Line Protection Inductive Load Protection Steering Logic ANODE 1 3 CATHODE/ANODE Symbol VR IF IFM(surge) VRRM IF(AV) Value Unit Vdc mAdc mA 3 CATHODE/ANODE A BAV99RWT1 CASE 41902, STYLE SC70/SOT323 BAV99WT1 CASE 41902, STYLE 9 SC70/SOT323 CATHODE 1 ANODE 2 CATHODE 2 Rating Reverse Voltage Forward.

BZV80 : BZV80; BZV81; Voltage Reference Diodes. Reference voltage range: 6.51 V (nom. 6.20 V) Low temperature coefficient range: max. to 0.01 %/K. Leadless voltage reference diode in a small glass SOD80 SMD package. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL IZ Ptot Tstg Tj Tamb Note 1. Device mounted a FR4 printed-circuit board. PARAMETER working current.

DN3545 : N-Channel. Depletion Mode MOSFET - N-channel. BVDSX / BVDGX 450V * Same as SOT-89. RDS(ON) (max) 20 IDSS (min) 200mA Order Number / Package TO-243AA* DN3545N8 Die DN3545ND Product shipped on 2000 piece carrier tape reels. High input impedance Low input capacitance Fast switching speeds Low on resistance Free from secondary breakdown Low input and output leakage These depletion-mode (normally-on).

GT25Q301 : Vces (V) = 1200 ;; Ic (A) = 25 ;; Vce (sat) (V) = 2.7 ;; PC (W) = ;; TRR Max (ns) = ;; Package = TO3P(LH) ;; Main Application = Inverter/ups ;; Feature = Low Loss.

KRX203U : BRTs. = Built in Bias Resistor ;; Package = US6.

KTC9011 : = Rf/vhf/uhf Transistor ;; Package = TO-92.

MAC15N : Triacs , Package: TO-220, Pins=3. Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Blocking Voltage to 800 Volts On-State Current Rating of 15 Amperes RMS at 80C Uniform Gate Trigger Currents in Three Modes High Immunity to dv/dt 250 V/s minimum at 125C Minimizes Snubber Networks for Protection Industry.

P0295WC12x : 1000-1200 Fast Turn Off Thyristor - Capsule Type.

PHB3N50E : PHP3N50E/PHB3N50E; Powermos Transistors Avalanche Energy Rated. Repetitive Avalanche Rated Fast switching Stable off-state characteristics High thermal cycling performance Low thermal resistance N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general.

05002-510BGZP : CAPACITOR, CERAMIC, MULTILAYER, 100 V, BP, 0.000051 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; Capacitance Range: 5.10E-5 microF ; Capacitance Tolerance: 2 (+/- %) ; WVDC: 100 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface Mount Technology.

LA731ELBK122J0600 : RESISTOR, TEMPERATURE DEPENDENT, PTC, 1200 ohm, SURFACE MOUNT. s: Category / Application: General Use ; Mounting / Packaging: Surface Mount Technology (SMT / SMD) ; Resistance Range: 1200 ohms ; Tolerance: 5 +/- % ; Power Rating: 0.0160 watts (2.14E-5 HP) ; Operating AC Voltage: 10 volts ; Operating Temperature: -55 to 125 C (-67 to 257 F).

SISSD12M-100 : 1 ELEMENT, 10.89 uH, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Lead Style: ONE SURFACE ; Molded / Shielded: Shielded ; Application: General Purpose, Power Choke ; Inductance Range: 10.89 microH ; Operating Temperature: -40 to 85 C (-40 to 185 F).

VB32M00251K : RESISTOR, VOLTAGE DEPENDENT, 330 V, 200 J, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Mounting / Packaging: ThroughHole ; Operating DC Voltage: 330 volts.

W2L16D105MAT3A : CAPACITOR, CERAMIC, MULTILAYER, 6.3 V, X5R, 1 uF, SURFACE MOUNT, 0805. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 1 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 6.3 volts ; Mounting Style: Surface.

2N5488 : 5 A, 100 V, NPN, Si, POWER TRANSISTOR. s: Polarity: NPN.

3198BA123M025AHA : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 25 V, 12000 uF, CHASSIS MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; RoHS Compliant: Yes ; : Polarized ; Capacitance Range: 12000 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 25 volts ; Leakage Current: 1640 microamps ; ESR: 31.6 milliohms ; Mounting Style: CHASSIS MOUNT ; Operating.

394PMB202KAP1 : CAPACITOR, METALLIZED FILM, POLYPROPYLENE, 2000 V, 0.39 uF, CHASSIS MOUNT. s: Technology: Film Capacitors ; Applications: General Purpose ; Electrostatic Capacitors: Polypropylene ; RoHS Compliant: Yes ; Capacitance Range: 0.3900 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 2000 volts ; Mounting Style: CHASSIS MOUNT ; Operating Temperature: -40 to 85 C (-40.

475MPP152KS2P : CAPACITOR, METALLIZED FILM, POLYPROPYLENE, 1500 V, 4.7 uF, CHASSIS MOUNT. s: Technology: Film Capacitors ; Applications: General Purpose ; Electrostatic Capacitors: Polypropylene ; RoHS Compliant: Yes ; Capacitance Range: 4.7 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 1500 volts ; Mounting Style: CHASSIS MOUNT ; Operating Temperature: -55 to 85 C (-67.

 
0-C     D-L     M-R     S-Z