DESCRIPTION
The 2N5151-220M and the 2N5153-220M are silicon expitaxial planar PNP transistors in TO-220 (JEDEC TO-257AB) metal case intended for use in switching applications.
ABSOLUTE MAXIMUM RATINGS TCASE = 25°c unless otherwise stated
VCBO VCEO VEBO IC IC(PK) IB Ptot Collector Base Voltage Collector Emitter Voltage (IB = 0) Emitter Base Voltage (IC = 0) Continuous Collector Current Peak Collector Current Base Current Total Dissipation at Tamb = 25°C Tcase = 50°C Tcase = 100°C Tstg Tj Storage Temperature Range Operating Junction temperature
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max 7 40 °C/W
ELECTRICAL CHARACTERISTICS FOR 2N5151-220M (Tcase = 25°C unless otherwise stated)
ICES ICEV ICEO IEBO Collector Cut Off Current Collector Cut Off Current Collector Cut Off Current Emitter Cut Off Current
VCEO(SUS) Collector Emitter Saturation Voltage VCE(sat) VBE(sat) VBE hFE Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Base Emitter Voltage DC Current Gain
Tcase IC =2.5A VCE = -5V CCBO hFE Collector Base Capacitance Small Signal Current Gain = 20MHz ton toff Turn On Time Turn Off Time = 0.5A VCC = 30V VCC = 30v VCE = -5v VCE = -5V VCB = -10V
ELECTRICAL CHARACTERISTICS FOR 2N5153-220M (Tcase = 25°C unless otherwise stated)
Tcase IC =2.5A VCE = -5V CCBO hFE Collector Base Capacitance Small Signal Current Gain = 20MHz ton toff Turn On Time Turn Off Time = 0.5A VCC = 30V VCC = 30v VCE = -5v VCE = -5V VCB = -10V
|