|
Details, datasheet, quote on part number:2N5415CSM4
| |
| Part: | 2N5415CSM4 |
| Category: | Discrete => Transistors => Bipolar |
| Description: | Screening Options Available = ;; Polarity = PNP ;; Package = LCC3 (MO-041BA) ;; Vceo = 200V ;; IC(cont) = 1A ;; HFE(min) = 30 ;; HFE(max) = 150 ;; @ Vce/ic = 10V / 50mA ;; FT = 15MHz ;; PD = 1W |
| Company: | Semelab Plc |
| Datasheet: | Download 2N5415CSM4 datasheet File size : 17 kB |
| Request For quote: | Find where to buy 2N5415CSM4
|
| |
Datasheet text preview:
2N5415CSM4 2N5416CSM4
MECHANICAL DATA Dimensions in mm (inches)
5.59 ± 0.13 (0.22 ± 0.005) 0.25 ± 0.03 (0.01 ± 0.001)
PNP PLANAR EPITAXIAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
1.40 ± 0.15 (0.055 ± 0.006)
FEATURES
· Silicon Planar PNP Transistor · Hermetic Ceramic Surface Mount Package
0.23 min. (0.009)
0 . 6 4 ± 0.08 (0 . 0 2 5 ± 0.003)
0.23 r a d . (0.009) 3 2 1 .2 7 ± 0.05 (0 . 0 5 ± 0.002)
3 . 8 1 ± 0.13 ( 0 .1 5 ± 0.005)
4
1
· CECC Screening Options · Space quality Options
1.02 ± 0.20 (0.04 ± 0.008)
2.03 ± 0.20 (0.08 ± 0.008)
LCC3 PACKAGE Underside View
PAD 1 Collector PAD 2 N/C PAD 3 Emitter PAD 4 Base
ABSOLUTE MAXIMUM RATINGS
VCBO VCEO(sus) VEBO IC IB Ptot Tstg TJ Rth-j-amb
Tcase = 25°c unless otherwise stated
2N5415 -200V -200V -4V
2N5416 -350V -300V -6V
Collector Base Voltage (IE=0) Collector Emitter Voltage (IB=0) Emitter Base Voltage (IC=0) Collector Current Base Current Total Device Dissipation at TA £ 25°C Storage Temperature Junction Temperature Thermal Resistance Junction - Ambient
1A 0.5A 1W 65 to +200°C 175°C 150°C/W
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 02/00
2N5415CSM4 2N5416CSM4
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min.
ICBO ICEO IEBO Collector Cut Off Current (VE =0) Emitter Cut Off Current (IB =0) Emitter Cut Off Current (IC =0) VCB = -175V VCB = -280V VCE = -150V VEB = -4V VEB = -6V IC = -10mA IC = -10mA IC = -50mA IC = -50mA IC = -50mA IC = -50mA IC = -50mA IC = -5mA f = 1KHz IE = 0 f = 1MHz IC = -10mA f = 5MHz VCE = -10V 15 VCB = -10V
2N5415 2N5416 2N5415 2N5415 2N5416
Typ.
Max.
-50 -50 -50 -20 -20
Unit
mA mA mA
V V V
VCEO(sus)* Collector Emitter on Voltage(IB =0) VCER(sus)* Collector Emitter Breakdown Voltage VCE(sat) Collector Base Breakdown Voltage VBE* hFE* hfe Ccbo fT Base-Emitter Voltage DC Current Gain Small Signal Current Gain Collector-Base Capacitance Transition Frequency
-200 -300 -350 -0.5 -1.5 30 30 25 25 150 120
RBE=50W 2N5416 IB =-5mA VCE = -10V VCE =-10V 2N5415 VCE =-10V 2N5416 VCE = -10V
2N5416
V V -- -- pF MHz
*Pulsed: duration = 300ms, duty cycle 1.5%
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 02/00
|
|
