|
|
Part: 2N5428A
Category:
Discrete
-> Transistors
-> Bipolar
Description: Screening Options Available = ;; Polarity = NPN ;; Package = TO66 (TO213AA) ;; Vceo = 80V ;; IC(cont) = 7A ;; HFE(min) = 60 ;; HFE(max) = 240 ;; @ Vce/ic = 2V / 2A ;; FT = 30MHz ;; PD = 40W
Company: Semelab Plc
Datasheet: Download 2N5428A datasheet File size : 260 kB
Request For quote: Find where to buy 2N5428A
Datasheet text preview:
2N5428A
MECHANICAL DATA Dimensions in mm
MEDIUM POWER NPN SILICON TRANSISTOR
6.35 (0.250) 8.64 (0.340)
3.68 (0.145) rad. max.
3.61 (0.142) 3.86 (0.145) rad.
14.48 (0.570) 14.99 (0.590)
Designed for switching and wide - band amplifier applications
24.33 (0.958) 24.43 (0.962)
0.71 (0.028) 0.86 (0.034)
4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min.
1.27 (0.050) 1.91 (0.750)
TO66 Package.
ABSOLUTE MAXIMUM RATINGS (Tcase=25°C unless otherwise stated)
VCEO VCB VEB IC IB PD Tj Tstj RqJC Semelab plc. Collector - emitter voltage Collector - base voltage Emitter - base voltage Collector current continuous Base current Total device dissipation at Tcase= 25°C Derate above 25°C Operating and storage junction temperature range Thermal resistance, junction to case.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
11.94 (0.470) 12.70 (0.500)
80 V 80 V 6V 7A 1A 40 W 228 mW / °C -65 to 200°C 4.37 °C / W
Prelim. 7/93
2N5428A
OFF CHARACTERISTICS
Parameter
BVCEO (sus) ICBO ICEX ICBO IEBO Collector - Emitter sustaining voltage Collector cutoff current Collector cutoff current Collector cutoff current Emitter cutoff current
Test Conditions
IC = 50mA , IB = 0 VCE = 75V , IB = 0 VCE = 75V , VEB(off) = 1.5V VCE = 75V , VEB(off) = 1.5V , TC = 150°C VCB = Rated VCB ' IE = 0 VBE = 6V, IC = 0
Min
80 -
Max
100 10 1.0 10 100
Unit
V
mA mA
mA
mA mA
ON CHARACTERISTICS
Parameter
hFE DC Current gain (1)
Test Conditions
IC = 500mA , VCE = 2V IC = 2A , VCE = 2V IC = 5A , VCE = 2V IC = 2A , IB = 0.2A IC = 7A , IB = 0.7A IC = 2A , IB = 0.2A IC = 7A , IB = 0.7A
Min
60 30 30
Max
120
Unit
--
VCE(sat) VBE(sat)
Collector - Emitter saturation voltage Base - Emitter saturation voltage
0.7 1.2 1.2 2.0
V
V
DYNAMIC CHARACTERISTICS
Parameter
fT Cob Cib Current gain bandwidth product Output capacitance Input capacitance
Test Conditions
(IC = 500 mA, VCE = 10V, f = 10 MHz) (VCB = 10V, IE = 0, f = 100 kHz) (VBE = 2V, IC = 0, f = 100 kHz)
Min
30 -
Max
250 1000
Unit
MHz pF pF
SWITCHING CHARACTERISTICS
Parameter
td tr ts tf Delay time Rise time Storage time Fall time
Test Conditions
(VCC = 40V, VEB(off) = 3V IC = 2A, IB1 = 200mA) (VCC = 40V, IC = 2A IB1 = IB2 = 200mA)
Min
-
Max
100 100 2.0 200
Unit
ns ns
ms
ns
(1) Pulse Test: Pulse width = 300 ms, Duty Cycle = 2.0 %
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 7/93
Others parts begin by 2n
2N-1 2N-2 2N-3 2N-4 2N-5 2N-6 2N-7 2N-8 2N-9 2N-10 2N-11 2N-12 2N-13 2N-14 2N-15 2N-16 2N-17 2N-18 2N-19 2N-20 2N-21 2N-22 2N-23 2N-24 2N-25 2N-26 2N-27 2N-28 2N-29 2N-30 2N-31
|
|
|
