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Details, datasheet, quote on part number:2N6659LCC4
 
 
Part:2N6659LCC4
Description:60V VDSS N-channel Fet (field Effect Transistor)
Company:Semelab Plc
Datasheet:Download 2N6659LCC4 datasheet   File size : 45 kB
Request For quote:  Find where to buy 2N6659LCC4
 



Datasheet text preview:
2N6659

MECHANICAL DATA Dimensions in mm (inches)
8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335)

N­CHANNEL ENHANCEMENT MODE MOS TRANSISTOR
FEATURES
· Switching Regulators · Converters

4.19 (0.165) 4.95 (0.195)

12.70 (0.500) min.

0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.

5.08 (0.200) typ.

· Motor Drivers
2.54 (0.100)

2 1
0.66 (0.026) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034)

3

45°

TO­39 METAL PACKAGE
Underside View PIN 1 ­ Source PIN 3 ­ Drain PIN 2 ­ Gate CASE ­ Drain

ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C unless otherwise stated)
VDS VGS ID ID IDM PD PD Tj Tstg TL Drain ­ Source Voltage Gate ­ Source Voltage Drain Current Drain Current Pulsed Drain Current * Power Dissipation Power Dissipation Storage Temperature Range Lead Temperature (1/16" from case for 10 sec.) @ TCASE = 25°C @ TCASE = 100°C @ TCASE = 25°C @ TCASE = 100°C 35V ±20V 1.4A 1A 3A 6.25W 2.5W ­55 to 150°C ­55 to 150°C 300°C

Operating Junction Temperature Range

* Pulse width limited by maximum junction temperature.

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

Prelim. 4/00

2N6659

ELECTRICAL CHARACTERISTICS (TCASE = 25°C unless otherwise stated)
Parameter
STATIC CHARACTERISTICS V(BR)DSS Gate ­ Source Breakdown Voltage VGS(th) IGSS Gate Threshold Voltage Gate ­ Body Leakage Current VGS = 0V VDS = VGS VGS = ±15V VDS = 0V VDS = 90V IDSS ID(on)* Zero Gate Voltage Drain Current On­State Drain Current VDS = 72V VDS = 15V VGS = 5V RDS(on)* Drain ­ Source On Resistance VGS = 10V ID = 1A VGS = 5V VDS(on)* gFS* gOS* Drain ­ Source On Voltage Forward Transconductance Common Source Output Conductance DYNAMIC CHARACTERISTICS RDS(on) Cds Ciss Coss Crss tON tOFF Small Signal Drain ­ Source On Resistance Drain ­ Source Capacitance Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn­On Time Turn­Off Time VDD = 25V RL = 23W ID = 1A * Pulse Test: tp £ 80 ms , d £ 1% VGEN = 10V RG = 25W 9 10 8 10 ns VGS = 10V f = 1kHz VDS = 24V VGS = 0V f = 1MHz ID = 1A 1.3 30 35 28 2 1.8 40 50 40 10 pF VGS = 10V ID = 1A VDS = 10V VDS = 10V TCASE = 125°C ID = 0.5A ID = 0.1A 170 TCASE = 125°C ID = 0.3A TCASE = 125°C VGS = 0V VGS = 0V TCASE = 125°C VGS = 10V ID = 0.3A 1.5 1.8 1.8 1.3 2.6 0.54 1.3 2.6 350 1100 5 1.8 3.6 1.5 1.8 3.6 ms V ID = 10mA ID = 1mA 35 0.8 70 1.6 2 ±100 ±500 10 500 V nA

Test Conditions

Min.

Typ.

Max.

Unit

mA
A

W

ms W

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

Prelim. 4/00