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Details, datasheet, quote on part number:2N6661
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Datasheet text preview:
2N6661
MECHANICAL DATA Dimensions in mm (inches)
8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335)
6.10 (0.240) 6.60 (0.260)
NCHANNEL ENHANCEMENT MODE MOS TRANSISTOR
12.70 (0.500) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
FEATURES
5.08 (0.200) typ.
· Switching Regulators · Converters
2.54 (0.100)
2 1
0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034)
3
· Motor Drivers · JAN Level Screening Options · CECC Screening Options · Space Quality Level Options
45°
Underside View
TO39 PACKAGE (TO-205AD)
Pin 1 Source Pin 2 Gate Pin 3 Drain Case Drain
ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C unless otherwise stated)
VDS VGS ID ID IDM PD PD Tj Tstg TL Drain Source Voltage Gate Source Voltage Drain Current Drain Current Pulsed Drain Current * Power Dissipation Power Dissipation Storage Temperature Range Lead Temperature (
1" 16 from
90V ±20V @ TCASE = 25°C @ TCASE = 100°C @ TCASE = 25°C @ TCASE = 100°C 0.9A 0.7A 3A 6.25W 2.5W 55 to 150°C 55 to 150°C case for 10 sec.) 300°C
Operating Junction Temperature Range
* Pulse Width Limited by Maximum Junction Temperature
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 3092 Issue 2
2N6661
ELECTRICAL CHARACTERISTICS (TCASE = 25°C unless otherwise stated)
Parameter
STATIC CHARACTERISTICS V(BR)DSS Drain Source Breakdown Voltage VGS(th) IGSS Gate Threshold Voltage Gate Body Leakage Current VGS = 0V VDS = VGS VGS = ±15V VDS = 0V VDS = 90V IDSS ID(on)* Zero Gate Voltage Drain Current OnState Drain Current VDS = 72V VDS = 15V VGS = 5V RDS(on)* Drain Source On Resistance VGS = 10V ID = 1A VGS = 5V VDS(on)* gFS* gOS* Cds Ciss Coss Crss tON tOFF Drain Source On Voltage Forward Transconductance Common Source Output Conductance DYNAMIC CHARACTERISTICS Drain - Source Capacitance Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS TurnOn Time TurnOff Time VDD = 25V RL = 23 ID = 1A 8 10 * Pulse Test: tp 80 µs , 1% VGEN = 10V RG = 25 6 10 ns VDS = 24V VGS = 0V f = 1MHz 30 35 15 2 40 50 40 10 pF VGS = 10V ID = 1A VDS = 10V VDS = 10V TCASE = 125°C ID = 0.5A ID = 0.1A 170 TCASE = 125°C ID = 0.3A TCASE = 125°C VGS = 0V VGS = 0V TCASE = 125°C VGS = 10V ID = 0.3A 1.5 1.8 4.2 3.6 6.8 1.26 3.6 6.8 350 225 5.3 4 9 1.6 4 9 mS µs V ID = 10µA ID = 1mA 90 0.8 120 1.6 2 ±100 ±500 10 500 µA A V nA
Test Conditions
Min.
Typ.
Max.
Unit
Parameter
RJA RJC Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case
Min.
Typ.
Max.
170 8.3
Unit
K/W K/W
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 3092 Issue 2
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