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Details, datasheet, quote on part number:2N6796L
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Datasheet text preview:
2N6796
MECHANICAL DATA Dimensions in mm (inches)
8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355)
TMOS FET ENHANCEMENT N - CHANNEL
4.06 (0.16) 4.57 (0.18)
12.70 (0.500) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
FEATURES
5.08 (0.200) typ.
· V(BR)DSS = 100V · ID = 8A · RDSON = 0.18
2 1
0.74 (0.029) 1.14 (0.045)
0.71 (0.028) 0.53 (0.021)
2.54 (0.100)
3
45°
TO39 PACKAGE (TO-205AF)
Underside View PIN 1 Source PIN 2 Gate PIN 3 Drain
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
DrainSource Voltage VDGR DrainSource Voltage (RGS = 1.0 m) VGS GateSource Voltage ID Drain Current Continuous TCase = 25°C IDM Drain Current Pulsed PD Total Device Dissipation @ TCase = 25°C Derate above 25°C TJ , TSTG Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS RJC Thermal Resistance Junction to Case RJA Thermal Resistance Junction to Ambient TL Maximum Lead Temperature 1.6mm from Case for 10 secs. VDS 100V 100V ±20V 8.0A 32A 25W 0.2W/°C 55 to +150°C 5.0°C/W 175°C/W 300°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 3095 Issue 1
2N6796
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Parameter
V(BR)DSS VGS(th) IGSS IDSS rDS(on)
V DS(on)
Test Conditions
VGS = 0 VDS=VGS VDS = 0 VGS = 0V VGS = 10V VGS = 10V VGS = 15V VDS = 25V ID = 0.25mA ID = 0.5mA VGS = ±20V Tj = 125°C ID = 5.0A TA = 125°C ID = 8.0A ID = 5.0A VGS = 0 Voltage1
Min.
100 2.0
Typ.
Max. Unit
4.0 ±100 250 1000 0.18 0.35 1.56 V nA µA V s( ) pF
DrainSource Breakdown Voltage Gate Thresshold GateBody Leakage Zero Gate Voltage Drain Current DrainSource OnResistance1 DrainSource OnVoltage1 Forward Transconductance1 Input Capacitance Output capacitance Reverse Transfer Capacitance TurnOn Delay RiseTime1 Turn off Delay FallTime1 Time1 Time1
VDS = Rated VDSS
gfs Ciss Coss Crss td(on) tr td(off) tf VSD ton trr
3.0 350 150 50
9.0 900 500 150 30 75 40 45
f = 1.0MHZ VDD = 30V ID = 5.0A RG = 7.5 ohms RGEN = 50
ns
SOURCE DRAIN DIODE RATING CHARACTERISTICS
Diode Forward Voltage1 Forward Turn OnTime1 Time1 Reverse Recovery IS = Rated ID(on) VGS = 0 5.5
Negligible
V ns
300
1) Pulse test : Pulse Width < 300µs ,Duty Cycle < 2% 2) Pulse width limited by maximum juction temperature
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 3095 Issue 1
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