|
|
Part: 2N6798
Category:
Description: 200V VDSS N-channel Fet (field Effect Transistor)
Company: Semelab Plc
Datasheet: Download 2N6798 datasheet File size : 140 kB
Request For quote: Find where to buy 2N6798
Datasheet text preview:
2N6798
MECHANICAL DATA Dimensions in mm (inches)
8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 )
7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 )
N-CHANNEL ENHANCEMENT MODE TRANSISTOR
6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 )
1 2 .7 0 (0 .5 0 0 ) m in .
0 .8 9 m a x . (0 .0 3 5 ) 0.41 (0.016) 0.53 (0.021) d ia .
FEATURES
5 .0 8 (0 .2 0 0 ) ty p .
· V(BR)DSS = 200V
2 .5 4 (0 .1 0 0 )
1
0 .6 6 (0 .0 2 6 ) 1 .1 4 (0 .0 4 5 ) 0 .7 1 (0 .0 2 8 ) 0 .8 6 (0 .0 3 4 )
2 3
· ID = 5.5A
W · RDSON = 0.40W
45°
TO39 METAL PACKAGE
Underside View PIN 1 Source PIN 2 Gate PIN 3 Drain
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VDS VGS ID DrainSource Voltage GateSource Voltage Drain Current Continuous TC = 25°C TC = 100°C Drain Current Pulsed IDM IA Avalanche Current PD Total Device Dissipation @ TC = 25°C TC = 100°C TJ , TSTG Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS RqJC Thermal Resistance Junction to Case RqJC Thermal Resistance Junction to Ambient TL Maximum Lead Temperature 1.5mm from Case for 10 secs. 200V ±20V 5.5A 3.5A 22A 3.1A 25W 10W 55 to +150°C 5.0°CW 175°CW 300°C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk
Prelim. 6/99
2N6798
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Parameter
V(BR)DSS VGS(th) IGSS ID(on) IDSS rDS(on) gfs Ciss Coss Crss tdon tr td(of) tf VSD IS ISM trr Qrr DrainSource Breakdown Voltage Gate Thresshold Voltage GateBody Leakage On-State Drain Current
1
Test Conditions
VGS = 0 VDS=VGS VDS = 0 VDS = 2.2 VGS = 0 VGS = 10V VDS = 5V VDS = 25V ID = 1000mA ID = 250mA VGS = ±20V VGS = 10V Tj = 125°C ID = 3.5A ID = 3.5A VGS = 0
Min.
200 2.0 5.5
Typ.
Max. Unit
4.0 100 25 250 V nA A
Zero Gate Voltage Drain Current DrainSource OnResistance1 Forward Transconductance1 Input Capacitance Output capacitance Reverse Transfer Capacitance TurnOn Delay Time RiseTime Turn off Delay Time FallTime
VDS =0.8 x V(BR)DSS 0.25 2.5 3.0 600 250 80 8 42 12 30 IF = IS VGS = 0
mA W s(É)
pF
4.0
f = 1.0MHZ VDD = 77V ID = 3.5A RL = 22W VGEN = 10V
30 50 50 40 1.4 5.5 22 V A ns ns
RG = 7.5 ohms
SOURCE DRAIN DIODE RATING CHARACTERISTICS
Diode Forward Voltage1 Continues Current Pulsed Current2 IF = IS dIF/DT = 100A/mS 150 Reverse Recovery Time Reverse Recovered Charge
500 6
mC
1) Pulse test : Pulse Width < 300ms ,Duty Cycle < 2% 2) Pulse width limited by maximum juction temperature
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk
Prelim. 6/99
Others parts begin by 2n
2N-1 2N-2 2N-3 2N-4 2N-5 2N-6 2N-7 2N-8 2N-9 2N-10 2N-11 2N-12 2N-13 2N-14 2N-15 2N-16 2N-17 2N-18 2N-19 2N-20 2N-21 2N-22 2N-23 2N-24 2N-25 2N-26 2N-27 2N-28 2N-29 2N-30 2N-31
|
|
|
