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Part: 2N7081220MISO
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> N-Channel
Description: N-channel Power MOSFET
Company: Semelab Plc
Datasheet: Download 2N7081220MISO datasheet File size : 59 kB
Request For quote: Find where to buy 2N7081220MISO
Datasheet text preview:
2N7081220MISO
MECHANICAL DATA Dimensions in mm(inches)
4 .8 3 (0.190) 5 .0 8 (0.200) 0 .89 (0.035) 1 .14 (0.045)
NCHANNEL POWER MOSFET
VDSS ID(cont) RDS(on) 100V 11A 0.15
1 0 .4 1 (0.410) 1 0 .6 7 (0.420)
1 6 .3 8 (0.645) 1 6 .8 9 (0.665)
1 3 .3 8 (0.527) 1 3 .6 4 (0.537)
3 .5 6 (0.140) D ia . 3 .8 1 (0.150) 1 0 .4 1 (0.410) 1 0 .9 2 (0.430)
123
1 2 .0 7 (0.500) 1 9 .0 5 (0.750)
FEATURES
· TO220 ISOLATED HERMETIC PACKAGE · LOW RDS(ON)
0 .6 4 (0.025) D ia . 0 .8 9 (0.035) 2 .5 4 (0.100) BSC 3 .05 (0.120) BSC
· SIMPLE DRIVE REQUIREMENTS
TO220 Metal Package
Pin 1 Gate Pin 2 Drain Pin 3 Source
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VDS VGS ID IDM PD TJ , Tstg TL Drain Source Voltage Gate Source Voltage Continuous Drain Current Pulsed Drain Current 1 Power Dissipation TC = 25°C TC = 100°C Operating and Storage Temperature Range Lead Temperature (1/16" from case for 10 sec.) TC = 25°C TC = 100°C 100V ±20V 11A 7.7A 48A 45W 18W 55 to 150°C 300°C
Semelab plc
Telephone (01455) 556565 E-mail: sales@semelab.co.uk
Fax (01455) 552612. Web site: http://www.semelab.co.uk
Prelim. 6/98
2N7081220MISO
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Parameter
STATIC ELECTRICAL RATINGS BVDSS Drain Source Breakdown Voltage Gate Threshold Voltage VGS(th) Gate Body Leakage IDSS ID(on) RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IS ISM VSD trr Qrr RJC RJA RCS Zero Gate Voltage Drain Current OnState Drain Current Static Drain Source OnState Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Continuous Source Current Pulse Source Current
2
Test Conditions
VGS = 0 VDS = VGS VDS = 0 VDS = 80V VGS = 0 VDS = 10V VGS = 10V ID = 7.7A VDS = 15V VGS = 0 VDS = 25V f = 1MHz VDD = 50V VGEN =10V RL = 4.1 RG = 7.5 ID = 11A TJ = 125°C IDS = 7.7A TJ = 125°C VGS = 10V ID = 250µA ID = 250µA VGS = ±20V
Min.
100 2
Typ.
Max.
Unit
V
4 ±100 25 250
V nA µA A
11 0.12 0.22 4 600 190 35 7 45 30 10 12 48 5 0.15 0.27
S
pF
ns
SOURCE DRAIN DIODE CHARACTERISTICS A V ns µC 2.8 80 1 K/W
Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge PACKAGE CHARACTERISTICS Thermal Resistance Junction Case
IF =11 IF = IS dIF/dt = 100A/µs
VGS = 0 100 0.7
2.5 300
Thermal Resistance Junction Ambient Thermal Resistance Case Sink
Semelab plc
Telephone (01455) 556565 E-mail: sales@semelab.co.uk
Fax (01455) 552612. Web site: http://www.semelab.co.uk
Prelim. 6/98
Others parts begin by 2n
2N-1 2N-2 2N-3 2N-4 2N-5 2N-6 2N-7 2N-8 2N-9 2N-10 2N-11 2N-12 2N-13 2N-14 2N-15 2N-16 2N-17 2N-18 2N-19 2N-20 2N-21 2N-22 2N-23 2N-24 2N-25 2N-26 2N-27 2N-28 2N-29 2N-30 2N-31
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