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Part: 2N7085
Category:
Description: 100V VDSS N-channel Fet (field Effect Transistor)
Company: Semelab Plc
Datasheet: Download 2N7085 datasheet File size : 59 kB
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Datasheet text preview:
2N7085
MECHANICAL DATA Dimensions in mm(inches)
4 .8 3 (0.190) 5 .0 8 (0.200) 0 .89 (0.035) 1 .14 (0.045)
1 0 .4 1 (0.410) 1 0 .6 7 (0.420)
NCHANNEL ENHANCEMENT MODE TRANSISTOR
1 6 .3 8 (0.645) 1 6 .8 9 (0.665)
1 3 .3 8 (0.527) 1 3 .6 4 (0.537)
3 .5 6 (0.140) D ia . 3 .8 1 (0.150) 1 0 .4 1 (0.410) 1 0 .9 2 (0.430)
123
1 2 .0 7 (0.500) 1 9 .0 5 (0.750)
V(BR)DSS ID(A) RDS(on)
0 .6 4 (0.025) D ia . 0 .8 9 (0.035)
100V 20A 0.075W
2 .5 4 (0.100) BSC
3 .05 (0.120) BSC
FEATURES
· TO257AB HERMETIC PACKAGE FOR HIGH RELIABILITY APPLICATIONS · SCREENING OPTIONS AVAILBLE
TO257AB Metal Package
Pin 1 Gate Pin 2 Drain Pin 3 Source
· SIMPLE DRIVE REQUIREMENTS
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VDS VGS ID IDM PD TJ , Tstg TL Drain Source Voltage Gate Source Voltage Continuous Drain Current (TJ = 150°C) Pulsed Drain Current Power Dissipation TC = 25°C TC = 100°C Operating Junction and Storage Temperature Range Lead Temperature (1/16" from case for 10 sec.) TC = 25°C TC = 100°C 100V ±20V 20A 12A 80A 60W 20W 55 to 150°C 300°C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 7/99
2N7085
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Parameter Test Conditions
ID = 250µA ID = 250µA VGS = ±20V TJ = 125°C VGS = 10V TJ = 125°C IDS = 12A 5.0 20 0.06 0.11 8.0 1400 480 110 35 10 18 13 85 35 75 50 20 25 30 120 80 95 20 80 IF = 20A IF = 20A di/dt = 100A/µs VGS = 0 150 0.5 2.5 400 ns nC pF 0.075 0.14
Min.
100 2
Typ.
Max.
Unit
V
STATIC ELECTRICAL RATINGS V(BR)DSS DrainSource Breakdown Voltage VGS = 0 VGS(th) IGSS IDSS ID(on) rDS(on) gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr
1 Pulse
Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current OnState Drain Current1 Drain Source OnState Resistance
1
VDS = VGS VDS = 0 VDS = 80V VGS = 0 VDS = 10V VGS = 10V ID = 12A VDS = 15V VGS = 0 VDS = 25V f = 1MHz
4 ±100 25 250
V nA µA A
W
S
Forward Transconductance1 DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Gate Drain Rise Time2 Time2 Charge2 Charge2 Time2 Charge2 Gate Source
VDS = 0.5 x V(BR)DSS50V VGS = 10V VDD = 50V VGEN =10V RL = 2.5W RG = 4.7W ID = 20A ID = 20A
TurnOn Delay TurnOff Delay Fall Time2
SOURCE DRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Diode Forward Voltage1 Reverse Recovery Time Reverse Recovery Charge A V ns µC
2 Independent
test : Pulse Width < 300ms ,Duty Cycle < 2% of Operating Temperature
THERMAL RESISTANCECHARACTERISTICS Parameter
RthJC RthJA RthCS Thermal resistance Junction-Case Thermal resistance Junction-ambient Thermal resistance Case to Sink 1.0
Min.
Typ.
Max.
2.1 80
Unit
°C/W
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 7/99
Others parts begin by 2n
2N-1 2N-2 2N-3 2N-4 2N-5 2N-6 2N-7 2N-8 2N-9 2N-10 2N-11 2N-12 2N-13 2N-14 2N-15 2N-16 2N-17 2N-18 2N-19 2N-20 2N-21 2N-22 2N-23 2N-24 2N-25 2N-26 2N-27 2N-28 2N-29 2N-30 2N-31
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