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Part: 2N7086
Category:
Description: 200V VDSS N-channel Fet (field Effect Transistor)
Company: Semelab Plc
Datasheet: Download 2N7086 datasheet File size : 59 kB
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Datasheet text preview:
2N7086
MECHANICAL DATA Dimensions in mm(inches)
4 .8 3 (0.190) 5 .0 8 (0.200) 0 .89 (0.035) 1 .14 (0.045)
1 0 .4 1 (0.410) 1 0 .6 7 (0.420)
NCHANNEL ENHANCEMENT MODE TRANSISTOR
1 6 .3 8 (0.645) 1 6 .8 9 (0.665)
1 3 .3 8 (0.527) 1 3 .6 4 (0.537)
3 .5 6 (0.140) D ia . 3 .8 1 (0.150) 1 0 .4 1 (0.410) 1 0 .9 2 (0.430)
123
1 2 .0 7 (0.500) 1 9 .0 5 (0.750)
V(BR)DSS ID(A) RDS(on)
0 .6 4 (0.025) D ia . 0 .8 9 (0.035)
200V 14A 0.16
2 .5 4 (0.100) BSC
3 .05 (0.120) BSC
FEATURES
· TO257AB HERMETIC PACKAGE FOR HIGH RELIABILITY APPLICATIONS · SCREENING OPTIONS AVAILBLE
TO257AB Metal Package
Pin 1 Gate Pin 2 Drain Pin 3 Source
· SIMPLE DRIVE REQUIREMENTS
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VDS VGS ID IDM PD TJ , Tstg TL Drain Source Voltage Gate Source Voltage Continuous Drain Current Pulsed Drain Current 1 Power Dissipation TC = 25°C TC = 100°C Operating and Storage Temperature Range Lead Temperature (1/16" from case for 10 sec.) TC = 25°C TC = 100°C 200V ±20V 14A 8.5A 56A 60W 23W 55 to 150°C 300°C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk Website http://www.semelab.co.uk
Prelim. 1/99
2N7086
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Parameter Test Conditions
ID = 250µA ID = 250µA VGS = ±20V TJ = 125°C VGS = 10V TJ = 125°C IDS = 8.5A 5.0 1550 500 220 30 4.6 13 44 10 26 10 60 30 40 77 15 35 30 100 80 95 114 56 IF = IS IF = IS dIF/dt = 100A/µs VGS = 0 150 0.5 2.0 650 ns nC pF 14 0.14 0.25 0.16 0.30
Min.
200 2
Typ.
Max.
Unit
V
STATIC ELECTRICAL RATINGS BV(BR)DSS DrainSource Breakdown Voltage VGS = 0 VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr
1Pulse
Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current OnState Drain Current1 Static Drain Source OnState Resistance
1
VDS = VGS VDS = 0 VDS = 160V VGS = 0 VDS = 10V VGS = 10V ID = 8.5A VDS = 15V VGS = 0 VDS = 25V f = 1MHz
4 ±100 25 250
V nA µA A S
Forward Transconductance1 DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Gate Drain Rise Time2 Time2 Charge2 Charge2 Time2 Charge2 Gate Source
VDS = 0.5 x V(BR)DSS VGS = 10V VDD = 100V VGEN =10V RL = 7.1 RG = 4.7 ID = 14A ID = 14A
TurnOn Delay TurnOff Delay Fall Time2
SOURCE DRAIN DIODE CHARACTERISTICS Continuous Current Pulse Current
3
A V ns µC
Forward Voltage Reverse Recovery Time Reverse Recovery Charge
test : Pulse Width < 300µs ,Duty Cycle < 2% of Operating Temperature 3Pulse width Limited by maximum Junction Temperature
2Independent
THERMAL RESISTANCECHARACTERISTICS Parameter
RthJC RthJA RthCS Thermal resistance Junction-Case Thermal resistance Junction-ambient Thermal resistance Junction-ambient 1.0
Min.
Typ.
Max.
2.1 80
Unit
K/W
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk Website http://www.semelab.co.uk
Prelim. 1/99
Others parts begin by 2n
2N-1 2N-2 2N-3 2N-4 2N-5 2N-6 2N-7 2N-8 2N-9 2N-10 2N-11 2N-12 2N-13 2N-14 2N-15 2N-16 2N-17 2N-18 2N-19 2N-20 2N-21 2N-22 2N-23 2N-24 2N-25 2N-26 2N-27 2N-28 2N-29 2N-30 2N-31
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