|
Details, datasheet, quote on part number:D2002UK
| |
| Part: | D2002UK |
| Category: | RF & Microwaves |
| Description: | Purchase Online = ;; Package = DP ;; Impedance Calculator = ;; Operating Voltage (V) = 28 ;; Power Output (W) = 5 ;; Minimum Efficiency = 40 ;; Gain = 13 ;; Test Frequency (MHz) = 1000 ;; Configuration = Single-ended ;; Application Range = 1-1000MHz ;; Active Fet Configuration = 2 ;; BVDSS (V) = 65 |
| Company: | Semelab Plc |
| Datasheet: | Download D2002UK datasheet File size : 16 kB |
| Request For quote: | Find where to buy D2002UK
|
| |
Datasheet text preview:
TetraFET
D2002UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C N (typ) B 3 D (2 pls)
2 1 A
F (2 pls) H J
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W 28V 1GHz SINGLE ENDED
FEATURES
· SIMPLIFIED AMPLIFIER DESIGN
M
I
E
K
G
· SUITABLE FOR BROAD BAND APPLICATIONS · LOW Crss · SIMPLE BIAS CIRCUITS
DP
PIN 1 PIN 3 SOURCE GATE PIN 2 DRAIN
DIM mm A 16.51 B 6.35 C 45° D 3.30 E 18.92 F 1.52 G 2.16 H 14.22 I 1.52 J 6.35 K 0.13 M 5.08 N 1.27 x 45°
Tol. 0.25 0.13 5° 0.13 0.08 0.13 0.13 0.08 0.13 0.13 0.03 0.51 0.13
Inches 0.650 0.250 45° 0.130 0.745 0.060 0.085 0.560 0.060 0.250 0.005 0.200 0.050 x 45°
Tol. 0.010 0.005 5° 0.005 0.003 0.005 0.005 0.003 0.005 0.005 0.001 0.020 0.005
· LOW NOISE · HIGH GAIN 13 dB MINIMUM
APPLICATIONS
· VHF/UHF COMMUNICATIONS from DC to 2 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain Source Breakdown Voltage Gate Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 29W 65V ±20V 2A 65 to 150°C 200°C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 12/00
D2002UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min.
BVDSS IDSS IGSS gfs GPS Ciss Coss Crss DrainSource Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance* Common Source Power Gain Drain Efficiency Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V PO = 5W VDS = 28V f = 1GHz VDS = 0 VDS = 28V VDS = 28V VGS = 5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz IDQ = 0.2A ID = 10mA VGS = 0 VDS = 0 VDS = VGS ID = 0.4A 1 0.36 13 40 20:1 65
Typ.
Max. Unit
V 2 1 7 mA µA V S dB % -- 20 11 1 pF pF pF
VGS(th) Gate Threshold Voltage*
VSWR Load Mismatch Tolerance
* Pulse Test:
Pulse Duration = 300 µs , Duty Cycle 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHjcase Thermal Resistance Junction Case Max. 6.0°C / W
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 12/00
|
|
