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Details, datasheet, quote on part number:D2006UK
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| Part: | D2006UK |
| Category: | RF & Microwaves |
| Description: | Purchase Online = ;; Package = DK ;; Impedance Calculator = ;; Operating Voltage (V) = 28 ;; Power Output (W) = 15 ;; Minimum Efficiency = 40 ;; Gain = 13 ;; Test Frequency (MHz) = 1000 ;; Configuration = Push-pull ;; Application Range = 1-1000MHz ;; Active Fet Configuration = 3+3 ;; BVDSS (V) = 65 |
| Company: | Semelab Plc |
| Datasheet: | Download D2006UK datasheet File size : 17 kB |
| Request For quote: | Find where to buy D2006UK
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Datasheet text preview:
TetraFET
D2006UK
METAL GATE RF SILICON FET
MECHANICAL DATA
A K
B (2 pls) E
C 1
2
3
D 5 4
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 15W 28V 1GHz PUSHPULL
FEATURES
· SIMPLIFIED AMPLIFIER DESIGN
G (4 pls)
F
H
J
I
M
N
· SUITABLE FOR BROAD BAND APPLICATIONS · VERY LOW Crss · SIMPLE BIAS CIRCUITS · LOW NOISE
DK
PIN 1 PIN 3 PIN 5 SOURCE (COMMON) PIN 2 DRAIN 2 GATE 1 DIM A B C D E F G H I J K M N mm 6.45 1.65R 45° 16.51 6.47 18.41 1.52 4.82 24.76 1.52 0.81R 0.13 2.16 Tol. 0.13 0.13 5° 0.76 0.13 0.13 0.13 0.25 0.13 0.13 0.13 0.02 0.13 Inches 0.254 0.065R 45° 0.650 0.255 0.725 0.060 0.190 0.975 0.060 0.032R 0.005 0.085 Tol. 0.005 0.005 5° 0.03 0.005 0.005 0.005 0.010 0.005 0.005 0.005 0.001 0.005 PIN 4 DRAIN 1 GATE 2
· HIGH GAIN 13 dB MINIMUM
APPLICATIONS
· HF/VHF/UHF COMMUNICATIONS from DC to 2 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD BVDSS BVGSS ID(sat) Tstg Tj * Per Side Power Dissipation Drain Source Breakdown Voltage * Gate Source Breakdown Voltage * Drain Current * Storage Temperature Maximum Operating Junction Temperature 70W 65V ±20V 3A 65 to 150°C 200°C
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 1/96
D2006UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min.
PER SIDE
BVDSS IDSS IGSS gfs GPS DrainSource Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance * Common Source Power Gain Drain Efficiency VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V PO = 15W VDS = 28V f = 1GHz IDQ = 0.6A ID = 10mA VGS = 0 VDS = 0 VDS = VGS ID = 0.6A 1 0.54 13 40 20:1 65
Typ.
Max. Unit
V 0.6 1 7 mA µA V S dB % -- 36 18 1.5 pF pF pF
VGS(th) Gate Threshold Voltage *
TOTAL DEVICE
VSWR Load Mismatch Tolerance Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
PER SIDE
VDS = 0 VDS = 28V VDS = 28V VGS = 5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz
* Pulse Test:
Pulse Duration = 300 µs , Duty Cycle 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHjcase Thermal Resistance Junction Case Max. 2.5°C / W
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 1/96
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