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Details, datasheet, quote on part number:D2008UK
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| Part: | D2008UK |
| Category: | RF & Microwaves |
| Description: | Purchase Online = ;; Package = TO39 ;; Impedance Calculator = ;; Operating Voltage (V) = 28 ;; Power Output (W) = 5 ;; Minimum Efficiency = 40 ;; Gain = 13 ;; Test Frequency (MHz) = 400 ;; Configuration = Single-ended ;; Application Range = 1-400MHz ;; Active Fet Configuration = 2 ;; BVDSS (V) = 65 |
| Company: | Semelab Plc |
| Datasheet: | Download D2008UK datasheet File size : 19 kB |
| Request For quote: | Find where to buy D2008UK
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Datasheet text preview:
TetraFET
D2008UK
METAL GATE RF SILICON FET
MECHANICAL DATA
8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335)
4.19 (0.165) 4.95 (0.195)
12.70 (0.500) min.
0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia.
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W 28V 400MHz SINGLE ENDED
FEATURES
5.08 (0.200) typ.
· SIMPLIFIED AMPLIFIER DESIGN · SUITABLE FOR BROAD BAND APPLICATIONS
2.54 (0.100)
2 1
0.66 (0.026) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034)
3
· LOW Crss · SIMPLE BIAS CIRCUITS · LOW NOISE · HIGH GAIN 13 dB MINIMUM
45°
TO-39 PACKAGE
PIN1 DRAIN PIN2 GATE PIN3 SOURCE
APPLICATIONS
· VHF COMMUNICATIONS from DC to 400MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain Source Breakdown Voltage Gate Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 29W 65V ±20V 2A 65 to 150°C 200°C
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 3/97
D2008UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min.
BVDSS IDSS IGSS gfs GPS Ciss Coss Crss DrainSource Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance* Common Source Power Gain Drain Efficiency Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V PO = 5W VDS = 28V f = 400MHz VDS = 0 VDS = 28V VDS = 28V VGS = 5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz IDQ = 0.2A ID = 10mA VGS = 0 VDS = 0 VDS = VGS ID = 0.4A 1 0.36 13 40 20:1 65
Typ.
Max. Unit
V 2 1 7 mA µA V S dB % -- 20 11 1 pF pF pF
VGS(th) Gate Threshold Voltage*
VSWR Load Mismatch Tolerance
* Pulse Test:
Pulse Duration = 300 µs , Duty Cycle 2%
THERMAL DATA
RTHjcase Thermal Resistance Junction Case Max. 6.0°C / W
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 3/97
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