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Details, datasheet, quote on part number:D2012UK
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| Part: | D2012UK |
| Category: | RF & Microwaves |
| Description: | Purchase Online = ;; Package = DP ;; Impedance Calculator = ;; Operating Voltage (V) = 28 ;; Power Output (W) = 10 ;; Minimum Efficiency = 40 ;; Gain = 10 ;; Test Frequency (MHz) = 1000 ;; Configuration = Single-ended ;; Application Range = 1-1000MHz ;; Active Fet Configuration = 4 ;; BVDSS (V) = 65 |
| Company: | Semelab Plc |
| Datasheet: | Download D2012UK datasheet File size : 55 kB |
| Request For quote: | Find where to buy D2012UK
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Datasheet text preview:
TetraFET
D2012UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C N (typ) B 3 D (2 pls)
2 1 A
F (2 pls) H J
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W 28V 1GHz SINGLE ENDED
FEATURES
· SIMPLIFIED AMPLIFIER DESIGN
M
I
E
K
G
· SUITABLE FOR BROAD BAND APPLICATIONS · LOW Crss · SIMPLE BIAS CIRCUITS
DP
PIN 1 PIN 3 SOURCE GATE PIN 2 DRAIN
DIM mm A 16.51 B 6.35 C 45° D 3.30 E 18.92 F 1.52 G 2.16 H 14.22 I 1.52 J 6.35 K 0.13 M 5.08 N 1.27 x 45°
Tol. 0.25 0.13 5° 0.13 0.08 0.13 0.13 0.08 0.13 0.13 0.03 0.51 0.13
Inches 0.650 0.250 45° 0.130 0.745 0.060 0.085 0.560 0.060 0.250 0.005 0.200 0.050 x 45°
Tol. 0.010 0.005 5° 0.005 0.003 0.005 0.005 0.003 0.005 0.005 0.001 0.020 0.005
· LOW NOISE · HIGH GAIN 10 dB MINIMUM
APPLICATIONS
· VHF/UHF COMMUNICATIONS from 50 MHz to 2 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain Source Breakdown Voltage Gate Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 42W 65V ±20V 4A 65 to 150°C 200°C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 12/00
D2012UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min.
BVDSS IDSS IGSS gfs GPS Ciss Coss Crss DrainSource Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance* Common Source Power Gain Drain Efficiency Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V PO = 10W VDS = 28V f = 1GHz VDS = 0 VDS = 28V VDS = 28V VGS = 5V f = 1MHz VGS = 0 f = 1MHz VGS = 0f = 1MHz IDQ = 0.4A ID = 10mA VGS = 0 VDS = 0 VDS = VGS ID = 0.8A 1 0.72 10 40 20:1 65
Typ.
Max. Unit
V 0.8 1 7 mA µA V S dB % -- 48 24 2 pF pF pF
VGS(th) Gate Threshold Voltage*
VSWR Load Mismatch Tolerance
* Pulse Test:
Pulse Duration = 300 µs , Duty Cycle 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHjcase Thermal Resistance Junction Case Max. 4.2°C / W
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 12/00
D2012UK
3RXW JDLQ
3RXW (IILFLHQF\
3RXW :
I 0+] ,GT $ 9GV 9
*DLQ G%
3RXW :
I 0+] ,GT $ 9GV 9
(IILFLHQF\
3LQ:
3LQ:
Figure 1 Output Power and Gain vs. Input Power
,0' G%F
Figure 2 Output Power and Efficiency vs. Input Power
OPTIMUM SOURCE AND LOAD IMPEDANCE
I 0+] I 0+] 9GV 9 ,GT $
,0'
Frequency MHz
1000
ZS
5.0 - j7.2
ZL
2.4 - j7.1
3RXW:3(3
Figure 3 Output Power and Efficiency vs. Input Power Typical S Parameters
! # !Freq !MHz 100 200 300 400 500 600 700 800 900 1000 Vds=28V, Idq=0.8A MHz S MA R 50 S11 mag 0.841 0.871 0.891 0.902 0.923 0.933 0.955 0.955 0.966 0.955 ang -122 -146 -156 -163 -170 -174 -175 -177 179 177 S21 mag 24.547 11.482 6.683 4.365 3.055 2.113 1.758 1.413 1.161 0.944 ang 98 69 52 40 27 22 19 12 5 3 S12 mag ang 0.01318 13 0.01 0 0.00653 10 0.00596 49 0.00891 71 0.01349 79 0.01862 85 0.02344 82 0.02851 80 0.03236 80 S22 mag 0.49 0.61 0.708 0.767 0.813 0.851 0.881 0.902 0.902 0.902 ang -94 -125 -137 -146 -155 -165 -166 -170 -177 -179
Prelim. 12/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
D2012UK
10
+28V
100uF
G a te -B ia s
10K 1nF
1nF L2
6 .8 n F 6 x 3m m c o n ta c t pad D 2012U K 6x3mm c o n ta c t p a d T3 10pF 8 .2 p F
L1
30pF T1 1 -1 0 p F
3 .3 K
10nF T2
T4 1 -1 0 p F
T5
30pF
1 -1 0 p F
1GHz Test Fixture
Substrate 0.8mm PTFE/glass, Er = 2.5 All microstrip lines W = 2.2mm T1 35mm T2 15mm T3 4mm T4 14mm T5 32mm L1 7.5 turns 24swg enamelled copper wire, 3mm i.d. L2 1.5 turns 24swg enamelled copper wire on ferrite core
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 12/00
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