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Details, datasheet, quote on part number:D2019UK
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| Part: | D2019UK |
| Category: | RF & Microwaves |
| Description: | Purchase Online = ;; Package = SO8 ;; Impedance Calculator = ;; Operating Voltage (V) = 28 ;; Power Output (W) = 2.5 ;; Minimum Efficiency = 40 ;; Gain = 13 ;; Test Frequency (MHz) = 1000 ;; Configuration = Single-ended ;; Application Range = 1-1000MHz ;; Active Fet Configuration = 1 ;; BVDSS (V) = 65 |
| Company: | Semelab Plc |
| Datasheet: | Download D2019UK datasheet File size : 17 kB |
| Request For quote: | Find where to buy D2019UK
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Datasheet text preview:
TetraFET
D2019UK
METAL GATE RF SILICON FET
MECHANICAL DATA
A N
8
D
1 2
C B P
7 6 5
3 4
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W 28V 1GHz SINGLE ENDED
FEATURES
H
K
L J E F G
M
· SIMPLIFIED AMPLIFIER DESIGN · SUITABLE FOR BROAD BAND APPLICATIONS
PIN 5 SOURCE PIN 6 GATE PIN 7 GATE PIN 8 SOURCE
SO8 PACKAGE
PIN 1 SOURCE PIN 2 DRAIN PIN 3 DRAIN PIN 4 SOURCE
· VERY LOW Crss · SIMPLE BIAS CIRCUITS · LOW NOISE · HIGH GAIN 13 dB MINIMUM
Dim. A B C D E F G H J K L M N P
mm 4.06 5.08 1.27 0.51 3.56 4.06 1.65 0.76 0.51 1.02 45° 0° 7° 0.20 2.18 4.57
Tol. ±0.08 ±0.08 ±0.08 ±0.08 ±0.08 ±0.08 ±0.08 +0.25 -0.00 Min. Max. Max. Min. Max. ±0.08 Max. ±0.08
Inches 0.160 0.200 0.050 0.020 0.140 0.160 0.065 0.030 0.020 0.040 45° 0° 7° 0.008 0.086 0.180
Tol. ±0.003 ±0.003 ±0.003 ±0.003 ±0.003 ±0.003 ±0.003 +0.010 -0.000 Min. Max. Max. Min. Max. ±0.003 Max. ±0.003
APPLICATIONS
· HF/VHF/UHF COMMUNICATIONS from 1 MHz to 2 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD BVDSS BVGSS ID(sat) Tstg Tj Semelab plc. Power Dissipation Drain Source Breakdown Voltage Gate Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
17.5W 65V ±20V 1A 65 to 150°C 200°C
Prelim. 9/95
D2019UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min.
BVDSS IDSS IGSS gfs GPS Ciss Coss Crss DrainSource Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance* Common Source Power Gain Drain Efficiency Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V PO = 2.5W VDS = 28V f = 1GHz VDS = 0V VDS = 28V VDS = 28V VGS = 5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz IDQ = 0.1A ID = 10mA VGS = 0 VDS = 0 VDS = VGS ID = 0.2A 1 0.18 13 40 20:1 65
Typ.
Max. Unit
V 1 1 5 mA µA V S dB % -- 12 6 0.5 pF pF pF
VGS(th) Gate Threshold Voltage*
VSWR Load Mismatch Tolerance
* Pulse Test:
Pulse Duration = 300 µs , Duty Cycle 2%
THERMAL DATA
RTHjcase Thermal Resistance Junction Case Max. 10°C / W
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 9/95
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