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Details, datasheet, quote on part number:D2020UK
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| Part: | D2020UK |
| Category: | RF & Microwaves |
| Description: | Purchase Online = ;; Package = SO8 ;; Impedance Calculator = ;; Operating Voltage (V) = 28 ;; Power Output (W) = 5 ;; Minimum Efficiency = 40 ;; Gain = 13 ;; Test Frequency (MHz) = 1000 ;; Configuration = Single-ended ;; Application Range = 1-1000MHz ;; Active Fet Configuration = 2 ;; BVDSS (V) = 65 |
| Company: | Semelab Plc |
| Datasheet: | Download D2020UK datasheet File size : 17 kB |
| Request For quote: | Find where to buy D2020UK
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Datasheet text preview:
TetraFET
D2020UK
METAL GATE RF SILICON FET
MECHANICAL DATA
A N
8
D
1 2
C B P
7 6 5
3 4
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W 28V 1GHz SINGLE ENDED
FEATURES
H
K
L J E F G
M
· SIMPLIFIED AMPLIFIER DESIGN · SUITABLE FOR BROAD BAND APPLICATIONS
PIN 5 SOURCE PIN 6 GATE PIN 7 GATE PIN 8 SOURCE
SO8 PACKAGE
PIN 1 SOURCE PIN 2 DRAIN PIN 3 DRAIN PIN 4 SOURCE
· VERY LOW Crss · SIMPLE BIAS CIRCUITS · LOW NOISE · HIGH GAIN 13 dB MINIMUM
Dim. A B C D E F G H J K L M N P
mm 4.06 5.08 1.27 0.51 3.56 4.06 1.65 0.76 0.51 1.02 45° 0° 7° 0.20 2.18 4.57
Tol. ±0.08 ±0.08 ±0.08 ±0.08 ±0.08 ±0.08 ±0.08 +0.25 -0.00 Min. Max. Max. Min. Max. ±0.08 Max. ±0.08
Inches 0.160 0.200 0.050 0.020 0.140 0.160 0.065 0.030 0.020 0.040 45° 0° 7° 0.008 0.086 0.180
Tol. ±0.003 ±0.003 ±0.003 ±0.003 ±0.003 ±0.003 ±0.003 +0.010 -0.000 Min. Max. Max. Min. Max. ±0.003 Max. ±0.003
APPLICATIONS
· HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD BVDSS BVGSS ID(sat) Tstg Tj Semelab plc. Power Dissipation Drain Source Breakdown Voltage * Gate Source Breakdown Voltage* Drain Current Storage Temperature Maximum Operating Junction Temperature
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
30W 65V ±20V 2A 65 to 150°C 200°C
Prelim. 9/95
D2020UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min.
BVDSS IDSS IGSS gfs GPS Ciss Coss Crss DrainSource Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance* Common Source Power Gain Drain Efficiency Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V PO = 5W VDS = 28V f = 1GHz VDS = 0V VDS = 28V VDS = 28V VGS = 5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz IDQ = 0.4A ID = 10mA VGS = 0 VDS = 0 VDS = VGS ID = 0.4A 1 0.36 13 40 20:1 65
Typ.
Max. Unit
V 2 1 5 mA µA V S dB % -- 24 12 1 pF pF pF
VGS(th) Gate Threshold Voltage*
VSWR Load Mismatch Tolerance
* Pulse Test:
Pulse Duration = 300 µs , Duty Cycle 2%
THERMAL DATA
RTHjcase Thermal Resistance Junction Case Max. 6°C / W
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 9/95
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