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Details, datasheet, quote on part number:D2024UK
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| Part: | D2024UK |
| Category: | RF & Microwaves |
| Description: | Purchase Online = ;; Package = SO8 ;; Impedance Calculator = ;; Operating Voltage (V) = 28 ;; Power Output (W) = 10 ;; Minimum Efficiency = 40 ;; Gain = 10 ;; Test Frequency (MHz) = 1000 ;; Configuration = Single-ended ;; Application Range = 1-1000MHz ;; Active Fet Configuration = 4 ;; BVDSS (V) = 65 |
| Company: | Semelab Plc |
| Datasheet: | Download D2024UK datasheet File size : 21 kB |
| Request For quote: | Find where to buy D2024UK
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Datasheet text preview:
TetraFET
D2024UK
METAL GATE RF SILICON FET
MECHANICAL DATA
Dimensions in mm.
A N
8
D
1 2
C B P
7 6 5
3 4
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W 28V 1GHz SINGLE ENDED
FEATURES
H
K
L J E F G
M
· SIMPLIFIED AMPLIFIER DESIGN · SUITABLE FOR BROAD BAND APPLICATIONS · VERY LOW Crss · SIMPLE BIAS CIRCUITS · LOW NOISE · HIGH GAIN
SO8 PACKAGE
PIN 1 SOURCE PIN 2 DRAIN PIN 3 DRAIN PIN 4 SOURCE
Dim. A B C D E F G H J K L M N P mm 4.06 5.08 1.27 0.51 3.56 4.06 1.65 0.76 0.51 1.02 45° 0° 7° 0.20 2.18 4.57 Tol. ±0.08 ±0.08 ±0.08 ±0.08 ±0.08 ±0.08 ±0.08 +0.25 -0.00 Min. Max. Max. Min. Max. ±0.08 Max. ±0.08
PIN 5 SOURCE PIN 6 GATE PIN 7 GATE PIN 8 SOURCE
Inches 0.160 0.200 0.050 0.020 0.140 0.160 0.065 0.030 0.020 0.040 45° 0° 7° 0.008 0.086 0.180 Tol. ±0.003 ±0.003 ±0.003 ±0.003 ±0.003 ±0.003 ±0.003 +0.010 -0.000 Min. Max. Max. Min. Max. ±0.003 Max. ±0.003
APPLICATIONS
· HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD BVDSS BVGSS ID(sat) Tstg Tj Semelab plc. Power Dissipation Drain Source Breakdown Voltage Gate Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk
29W 65V ±20V 4A 65 to 150°C 200°C
Prelim.6/00
D2024UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
BVDSS IDSS IGSS gfs GPS Ciss Coss Crss DrainSource Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance* Common Source Power Gain Drain Efficiency Input Capacitance Output Capacitance Reverse Transfer Capacitance
Test Conditions
VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V PO = 10W VDS = 28V f = 1GHz VDS = 0V VDS = 28V VDS = 28V VGS = 5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz IDQ = 0.4A ID = 10mA VGS = 0 VDS = 0 VDS = VGS ID = 0.8A
Min.
65
Typ.
Max. Unit
V 1 4 mA µA V S dB % -- 48 24 2 pF pF pF
VGS(th) Gate Threshold Voltage*
1 0.72 10 40 20:1
7
VSWR Load Mismatch Tolerance
* Pulse Test:
Pulse Duration = 300 µs , Duty Cycle 2%
THERMAL DATA
RTHjcase Thermal Resistance Junction Case Max. 6°C / W
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk
Prelim.6/00
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