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Details, datasheet, quote on part number:D2026UK
 
 
Part:D2026UK
Category:RF & Microwaves
Description:Purchase Online = ;; Package = DW ;; Impedance Calculator = ;; Operating Voltage (V) = 28 ;; Power Output (W) = 5 ;; Minimum Efficiency = 40 ;; Gain = 13 ;; Test Frequency (MHz) = 400 ;; Configuration = Single-ended ;; Application Range = 1-500MHz ;; Active Fet Configuration = 2 ;; BVDSS (V) = 65
Company:Semelab Plc
Datasheet:Download D2026UK datasheet   File size : 16 kB
Request For quote:  Find where to buy D2026UK
 



Datasheet text preview:
TetraFET

D2026UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C

1

2

4
A

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W ­ 28V ­ 400MHz SINGLE ENDED
B

3

FEATURES
· SIMPLIFIED AMPLIFIER DESIGN · SUITABLE FOR BROAD BAND APPLICATIONS

D E F G H

· LOW Crss · SIMPLE BIAS CIRCUITS

DW
PIN 1 PIN 3 DRAIN GATE PIN 2 PIN 4 SOURCE SOURCE

· LOW NOISE · HIGH GAIN ­ 17 dB MINIMUM

DIM A B C D E F G H

mm 26.16 5.72 45° 7.11 0.13 1.52 0.43 7.67

Tol. 0.13 0.13 5° 0.13 0.02 0.13 0.20 REF

Inches 1.030 0.225 45° 0.280 0.005 0.055 0.060 0.120

Tol. 0.015 0.005 5° 0.005 0.001 0.005 0.008 REF

APPLICATIONS
· VHF/UHF COMMUNICATIONS from DC to 1 GHz

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain ­ Source Breakdown Voltage Gate ­ Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 29W 65V ±20V 2A ­65 to 150°C 200°C

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

Document Number 5286 Issue 1

D2026UK

ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min.
BVDSS IDSS IGSS gfs GPS Ciss Coss Crss Drain­Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance* Common Source Power Gain Drain Efficiency Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V PO = 5W VDS = 28V f = 400MHz VDS = 0 VDS = 28V VDS = 28V VGS = ­5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz IDQ = 0.2A ID = 10mA VGS = 0 VDS = 0 VDS = VGS ID = 0.4A 1 0.36 17 40 20:1 65

Typ.

Max. Unit
V 2 1 7 mA µA V S dB % -- 20 11 1 pF pF pF

VGS(th) Gate Threshold Voltage*

VSWR Load Mismatch Tolerance

* Pulse Test:

Pulse Duration = 300 µs , Duty Cycle 2%

HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.

THERMAL DATA
RTHj­case Thermal Resistance Junction ­ Case Max. 6.0°C / W

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

Document Number 5286 Issue 1