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Details, datasheet, quote on part number:D2030UK
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| Part: | D2030UK |
| Category: | RF & Microwaves |
| Description: | Purchase Online = ;; Package = F-0127 ;; Impedance Calculator = ;; Operating Voltage (V) = 28 ;; Power Output (W) = 5 ;; Minimum Efficiency = 40 ;; Gain = 13 ;; Test Frequency (MHz) = 1000 ;; Configuration = Single-ended ;; Application Range = 1-1000MHz ;; Active Fet Configuration = 2 ;; BVDSS (V) = 65 |
| Company: | Semelab Plc |
| Datasheet: | Download D2030UK datasheet File size : 16 kB |
| Request For quote: | Find where to buy D2030UK
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Datasheet text preview:
TetraFET
D2030UK
METAL GATE RF SILICON FET
MECHANICAL DATA
Dimensions in mm.
5.50 ± 0.15 1.27 ± 0.05 2 PL. 2 PL. 0.47 1.65 2 PL. 0.3 R. 4 PL.
2.313 ± 0.2
4 3
3.00 2.07 0.381 2 PL. 2 PL.
5
1.27
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W 28V 1GHz SINGLE ENDED
0.360 ± 0.005
6
1.27 6.50 ± 0.15
2 1
0.47 2 PL. 0.80 4 PL. 4.90 ± 0.15
7
1.27
8
0.10 R. TYP.
FEATURES
0.10 TYP. 0.508
0.10 TYP.
· SIMPLIFIED AMPLIFIER DESIGN · SUITABLE FOR BROAD BAND APPLICATIONS
F-0127 PACKAGE
PIN 1 SOURCE PIN 2 DRAIN PIN 3 DRAIN PIN 4 SOURCE PIN 5 SOURCE PIN 6 GATE PIN 7 GATE PIN 8 SOURCE
· VERY LOW Crss · SIMPLE BIAS CIRCUITS · LOW NOISE · HIGH GAIN 13 dB MINIMUM
Ceramic Material: Alumina. Parts can also be supplied with AlN or BeO for improved thermal resistance. Contact Semelab for details.
APPLICATIONS
· HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD BVDSS BVGSS ID(sat) Tstg Tj Semelab plc. Power Dissipation Drain Source Breakdown Voltage * Gate Source Breakdown Voltage* Drain Current Storage Temperature Maximum Operating Junction Temperature
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. Website http://www.semelab.co.uk E-mail: sales@semelab.co.uk
30W 65V ±20V 2A 65 to 150°C 200°C
Prelim. 2/99
D2030UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min.
BVDSS IDSS IGSS gfs GPS Ciss Coss Crss DrainSource Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance* Common Source Power Gain Drain Efficiency Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V PO = 5W VDS = 28V f = 1GHz VDS = 0V VDS = 28V VDS = 28V VGS = 5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz IDQ = 0.4A ID = 10mA VGS = 0 VDS = 0 VDS = VGS ID = 0.4A 1 0.36 13 40 20:1 65
Typ.
Max. Unit
V 2 1 5 mA µA V S dB % -- 24 12 1 pF pF pF
VGS(th) Gate Threshold Voltage*
VSWR Load Mismatch Tolerance
* Pulse Test:
Pulse Duration = 300 µs , Duty Cycle 2%
THERMAL DATA
RTHjcase Thermal Resistance Junction Case Max. 6°C / W
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. Website http://www.semelab.co.uk E-mail: sales@semelab.co.uk
Prelim. 2/99
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