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Details, datasheet, quote on part number:D2053UK
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| Part: | D2053UK |
| Category: | RF & Microwaves |
| Description: | Purchase Online = ;; Package = DBC4 ;; Impedance Calculator = ;; Operating Voltage (V) = 28 ;; Power Output (W) = 5 ;; Minimum Efficiency = 40 ;; Gain = 13 ;; Test Frequency (MHz) = 1000 ;; Configuration = Push-pull ;; Application Range = 1-1000MHz ;; Active Fet Configuration = 1+1 ;; BVDSS (V) = 65 |
| Company: | Semelab Plc |
| Datasheet: | Download D2053UK datasheet File size : 21 kB |
| Request For quote: | Find where to buy D2053UK
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Datasheet text preview:
TetraFET
D2053UK
METAL GATE RF SILICON FET
MECHANICAL DATA
B E D
8 1 7 6 3 4 2
C
R A
F
5
Q O N M J K L
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W 28V 1GHz PUSHPULL
FEATURES
I P H G
· SIMPLIFIED AMPLIFIER DESIGN · SUITABLE FOR BROAD BAND APPLICATIONS · VERY LOW Crss · SIMPLE BIAS CIRCUITS
Tol. .003 .003 5° .003 .003 .003 .005 .003 .003 .001 .001 .001 .003 .003 .003 .020 max .003
DBC4 Package
PIN 1 Source (Common) PIN 5 Source (Common) PIN 2 Drain 1 PIN 3 Drain 2 PIN 6 Gate 2 PIN 7 Gate 1
PIN 4 Source (Common) PIN 8 Source (Common)
DIM A B C D E F G H I J K L M N O P Q R mm 6.47 0.76 45° 0.76 1.14 2.67 11.73 8.43 7.92 0.20 0.64 0.30 3.25 2.11 6.35SQ 1.65 0.13 0.25 Tol. 0.08 0.08 5° 0.08 0.08 0.08 0.13 0.08 0.08 0.02 0.02 0.02 0.08 0.08 0.08 0.51 max 0.07 Inches .255 .030 45° .030 .045 .105 .462 .332 .312 .008 .025 .012 .128 .083 .250SQ .065 .005 0.010
· LOW NOISE · HIGH GAIN 13 dB MINIMUM
APPLICATIONS
· VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD BVDSS BVGSS ID(sat) Tstg Tj * Per Side Semelab plc. Power Dissipation Drain Source Breakdown Voltage * Gate Source Breakdown Voltage * Drain Current * Storage Temperature Maximum Operating Junction Temperature 15W 65V ±20V 1A 65 to 150°C 200°C
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 9/00
D2053UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min.
PER SIDE
BVDSS IDSS IGSS VGS(th) gfs GPS DrainSource Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Gate Threshold Voltage* Forward Transconductance* Common Source Power Gain Drain Efficiency Load Mismatch Tolerance Input Capacitance Output Capacitance VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V PO = 5W VDS = 28V f = 1GHz IDQ = 0.2A ID = 10mA VGS = 0 VDS = 0 VDS = VGS ID = 0.2A 1 0.18 13 40 20:1 65
Typ.
Max. Unit
V 1 1 7 mA
mA
V S dB % --
TOTAL DEVICE
h
VSWR Ciss Coss Crss
PER SIDE
VDS = 28V VDS = 28V VGS = 5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz 12 6 0.5 pF pF pF
Reverse Transfer Capacitance VDS = 28V
* Pulse Test:
Pulse Duration = 300 ms , Duty Cycle £ 2%
THERMAL DATA
RTHjcase Thermal Resistance Junction Case Max. 12°C / W
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 9/00
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