Digchip : Database on electronics components
Electronics components database



Details, datasheet, quote on part number: IRF250
 
 
Part numberIRF250
Category
Description
CompanySemelab Plc
DatasheetDownload IRF250 datasheet
Request For QuoteFind where to buy IRF250
 


 
Specifications, Features, Applications

FEATURES
· SIMPLE DRIVE REQUIREMENTS· SCREENING OPTIONS AVAILABLE
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)

VGS ID IDM PD EAS IAR EAR dv/dt TJ , Tstg TL Gate ­ Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current

Power Dissipation @ Tcase = 25°C Linear Derating Factor Single Pulse Avalanche Energy 2 Avalanche Current

Repetitive Avalanche Energy Peak Diode Recovery 3
Operating and Storage Temperature Range Lead Temperature 1.6mm (0.63") from case for 10 sec.

Notes 1) Pulse Test: Pulse Width 2) @ VDD 25 , Peak 30A , Starting 3) @ ISD 30A , di/dt 190A/µs , VDD BVDSS 150°C , Suggested = 2.35

ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)

STATIC ELECTRICAL RATINGS BVDSS Drain ­ Source Breakdown Voltage BVDSS Temperature Coefficient of TJ Breakdown Voltage Static Drain ­ Source On­State RDS(on) Resistance 1 VGS(th) Gate Threshold Voltage gfs Forward Transconductance 1 IDSS IGSS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr ton LD LS Zero Gate Voltage Drain Current Forward Gate ­ Source Leakage Reverse Gate ­ Source Leakage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate ­ Source Charge Gate ­ Drain ("Miller") Charge Turn­On Delay Time Rise Time Turn­Off Delay Time Fall Time

SOURCE ­ DRAIN DIODE CHARACTERISTICS Continuous Source Current Pulse Source Current = 25°C Diode Forward Voltage 1 VGS = 0 Reverse Recovery Time = 25°C Reverse Recovery Charge dt 100A/µs VDD 50V Forward Turn­On Time PACKAGE CHARACTERISTICS Internal Drain Inductance (measured from 6mm down drain lead to centre of die) Internal Source Inductance (from 6mm down source lead to source bond pad) THERMAL CHARACTERISTICS Thermal Resistance Junction ­ Case Thermal Resistance Case ­ Sink Thermal Resistance Junction ­ Ambient

Notes 1) Pulse Test: Pulse Width 2% 2) Repetitive Rating ­ Pulse width limited by maximum junction temperature.




Some Part number from the same manufacture Semelab Plc
IRF250SMD
IRF310SMD
IRF320SMD
IRF330
IRF330SMD
IRF340
IRF340SMD
IRF350
IRF350SMD
IRF360
IRF420SMD
IRF430 500V VDSS N-channel Fet (field Effect Transistor)
IRF440
IRF440SMD
IRF450 500V VDSS N-channel Fet (field Effect Transistor)
IRF451
IRF452
IRF453
IRF460 500V VDSS N-channel Fet (field Effect Transistor)
IRF5210
IRF7404SMD05